GaAs INFRARED EMITTING DIODE OPTDELECTAOQNICS 1N6266 | PACKAGE DIMENSION _DESCRIPTION The 1N6266 is a 940nm LED in a narrow angle, T0-46 SEATING package. PLANE | p #1 3 i 4) wh o A me L $T1332 SYMBOL INCHES MILLIMETERS NOTES MIN. | MAX. | MIN. | MAX. A .255 6.47 @b 016 | 021 | 407 | 533 @D 209 | .230 | 5.31 | 5.84 @D, 180 | 188 | 4.57 | 4.77 e 100 NOM. 2.54 NOM. 2 a. 050 NOM. 1.27 NOM. 2 h 030 76 j 031 | .044 79 | 1.11 k 036 | .046 $2 | 116 1 L 1.00 25.4 a 45 45 45 45 3 PACKAGE OUTLINE 3 C 5 J ANODE CATHODE (CONNECTED TO CASE) NOTES: $T1604 Good optical to mechanical alignment m@ Mechanically and wavelength matched to TO-18 series phototransistor Hermetically sealed package High irradiance level (*) indicates JEDEC registered values 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAX. DIAMETER .021 (.533mm) MEASURED IN GAUGING PLANE .054 + .001 .000 (137 + 025 000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007 (.778mm) THEIR TRUE POSITION RELATIVE TO A MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB.OPTOELECTRONICS GaAs INFRARED EMITTING DIODE 65C to +150C 65C to +125C *Soldering: *Lead Temperature (Iron)... 0. nen eee e eet eenes 240C for 5 sec.6459 *Lead Temperature (FIOW) 0.0.0... eect ttt nett ee 260C for 10 sec.**9 *Continuous Forward Current... 6. ccc ee nent nnn t tenet tee eens 100 mA *Forward Current (pw, 18; 200 HZ) 2. n ttt e nett eee nee ees 10A *Reverse Voltage ... cnet eet t teen eee n nee enteneees 3 Volts *Power Dissipation (T, = 25C) 20. eee e nee tee nnn ee eet neneennes 170 mW Power Dissipation (Tc = 25C) 00... tenet teen nn ete e ene e eens 1.3 W PARAMETER SYMBOL I. . . UNITS TEST CONDITIONS Forward Voltage . v Ir = 100 mA *Reverse Leakage Current A Va=3V *Peak Emission Wavelength nm |; = 100 mA Emission Angle at 2 Power Degrees *Radiant Intensity : mW/sr | = 100 mA Rise Time 0-90% of output R us Fall Time 100-10% of output . BS NOTES _ Derate power dissipation linearly 1.70 mW/C above 25C ambient. . Derate power dissipation linearly 13.0 mW/C above 25C case. . AMA flux is recommended. . Methanol or lsopranol alcohols are recommended as cleaning agents. . Soldering iron tip ie (1.6 mm) minimum from housing. . AS long as leads are not under any stress or spring tension. AROMAS anOPTOELECTRONICS GaAs INFRARED EMITTING DIODE \ O00 % DUTY CYCLE a oO ~ a TEMPERATURE - C a oO - INPUT CURRENT - AMPERES Ta - MAXIMUM ALLOWABLE AMBIENT | "00 100 "0,000 100,000 Ren t INPUT CURRENT AMPERES 8 3re f - FREQUENCY - HERTZ F Fig, 1. Maximum Pulse Capability ST1008 Fig. 2. Maximum Temperature vs. Input Current ST1009 NORMALIZED TO: tp * 00ma w .01 STERAOIANS Tar 25C > & 3 2 ry i z 5 z 3 & 3 a q i z z Jp - FORWARD CURRENT - AMPERES Jp - FORWARD CURRENT - MILLIAMPERES F 1 2 4 6 B10 oe 10 uh is ip - INPUT CURRENT AMPERES Ve - FORWARD VOLTAGE - VOLTS Vp - FORWARD VOLTAGE ~ VOLTS . , ST1012 . T1041 . Fig. 3. Radiant Intensity vs. Fig. 4. Forward Voltage vs. STI013 Fig. 5. Forward Voitage vs, ST1014 Input Current Ale/Al Forward Current Forward Current NORMALIZED TO: Ip * 100mA4 Ta = 25C w * ,OISTERADIANS SILICON PHOTODIODE =A AS DETECTOR Te 100mA RELATIVE OUTPUT Ip NORMALIZED POWER OUTPUT -Ol 920 940 960 380 1000 1020 o 25 so 75 100 150 d - WAVELENGTH - NANOMETERS Ty - AMBIENT TEMPERATURE - C . ST1016 . T1020 Fig. 6. Spectral Output Fig. 7. Output vs. sT10 TemperatureOPTOELECTRONICS GaAs INFRARED EMITTING DIODE The design of an Infrared Emitting Diode (IRED)- photodetector system normally requires the designer to determine the minimum amount of infrared irradiance received by the photodetector, which then allows definition of the photodetector current. Prior to the introduction of the 1N6266, the best method of estimating the photodetector received infrared was to geometrically proportion the piecewise integration of the typical beam pattern with the specified minimum total power output of the IRED. However, due to the inconsistencies of the IRED integral lenses and the beam lobes, this procedure will not provide a valid estimation. The 1N6266 now provides the designer specifications which precisely define the infrared beam along the devices mechanical axis. The 1N6266 is a premium device selected to give a minimum radiant intensity of 25 mW/steradian into the 0.01 steradians referenced by the devices mechanical axis and seating plane. Radiant intensity is the IRED beam power output, within a specified solid angle, per unit solid angle. A quick review of geometry indicates that a steradian is a unit of solid angle, referenced to the center of a sphere, defined by 47 times the ratio of the area projected by the solid angle to the area of the sphere. The solid angle is equal to the projected area divided by the squared radius. Steradians = 47 A/4aR? = A/R? = ow. As the projected area has a circular periphery, a geometric integration will solve to show the relationship of the Cartesian angle (a) of the cone, (from the center of the sphere) to the projected area. w = 2r (1-COS 5): Radiant intensity provides an easy, accurate tool to calculate the infrared power received by a photodetector located on the IRED axis. As the devices are selected for beam characteristics, the calculated results are valid for worst case analysis. For many applications a simple approximation for photodetector irradiance is: H = I,/d, in mw/em? where d is the distance from the IRED to the detector in cm. IRED power output, and therefore |,, depends on IRED current. This variation (Al,/Al) is documented in Figure 1, and completes the approximation: H = I./d? (Al./Al). This normally gives a conservative value of irradiance. For more accurate results, the effect of precise angle viewed by the detector must be considered. This is documented in Figure 2 (Al,/Aw) giving: H = I /d? (Al, /Al) in mw/em. For worst case designs, temperature coefficients and tolerances must also be considered. The minimum output current of the detector (I,) can be determined for a given distance (d) of the detector from the IRED. I, = (S)H = (S)I./d? or I, = (S)H = (S) (1./a?) (Al./Aw) (Al./Al where S is the sensitivity of the detector in terms of output current per unit irradiance from a GaAs source.OPTOELECTRONICS GaAs INFRARED EMITTING DIODE (RED RADIANT INTENSITY SPECIFICATION CONCEPT af Te 7 ws , oa / ~ ZY N AREA A i SPHERE \ RECEIVES ! Centered On \ POWER Pw I IRED Axis \ C/L And C/L \ Seating Plane \ \ \ \ \ \ \ \ \ N XX N N ~ w= A/d? = 2x (1-COS=) Steradians ig = Pwhe = mW/Steradiar, H = Pw/A = I,/d? mW/em? NORMALIZED TO: Ip = 100 mA w = .01 STERADIANS Ta? 25C I, - NORMALIZED RADIANT INTENSITY O02 004.006 .O) 02 I N I U t 3 4 68 7 lo a "9 Ale/Aa MATCHING A PHOTOTRANSISTOR WITH 1N6266 Assume a system requiring a 10mA I, at an IRED to detector spacing of 2cm (seating plane to seating plane), with bias conditions at specification points. Given: d,=2cm; I= 10 mA min.; le = 25 mW/Steradian Then: H,& Ie/D,? = 25/(2)? = 6.25 mW/cm?. Detector Evaluation: i, MIN. @ H (Tungsten) = H(GaAs) S(GaAs) on ay ; . w + 2m (!-COS-) \ ' S 04 06.08 | STERADIANS -w .6 81.0 Fig. 1 Intensity and Power vs. Angle TYPE mA mw/cm? mw/em? mA/mw/cm? L14G1 6 10 3 2 Li4G2 3 10 3 1 Calculated ly = d, is: LI4G1 (8) H, = (@) 625 = 12.5 mA LI4G2 (S) H, = (i) 6.25 = 6.25 mA Since the system requires an I, of 10 mA minimum the correct device to use is the L14G1. 1 1 20 DEGREES-@ 45 60OPTOELECTRONICS t z ry x 2 uo x e oO wl 4 a oO a w nN = = = x 3 z z 2 w 6 NORMALIZED TO: Ip *100mA | Vce = SV ING266 LI4Gl Ta = 25C pa | | | 28 50 78 100 T ~ TEMPERATURE - C Fig. 2. Output vs. Temperature IRED/Phototransistor Pair 150 ST1017 NORMALIZED Icecon} GaAs INFRARED EMITTING DIODE NORMALIZED TO Ip = 100 ma D6cm DISTANCE MEASURED FROM SEATING PLANE TO SEATING PLANE = 1A, PULSED = 100 mA, OC 10 15 25 o-cm . . ST1019 Fig. 3. i, vs. Distance IRED/Phototransistor Pair