fiAMOSPEC NPN POWER TRANSISTOR These devices are high voltage,high speed transistors for hor- zontal deflection output stages of TV"s and CTV"s circuits. FEATURES: * Collector-Emitter Sustaining Voltage - Vegy = 330 V (Min.) - BU407 = 400 V (Min.) - BU406 * Low Saturation Voltage Veetcaty= 1-0V(Max) @1,=5.0A * Fast Switching Speed: tf=0.75 us (Max) MAXIMUM RATINGS NPN BU406 BU407 7 AMPERE POWER TRANSISTORS 150-200 VOLTS 60 WATTS TO-220 Characteristic Symbol BU406 BU407 Unit Collector-Emitter Voltage VoEo 200 150 Vv Collector-Emitter Voltage Veev 400 330 Vv Collector-Bse Voltage Vepo 400 330 Vv Emitter-Base Voltage Vepo 6.0 V Collector Current - Continuous le 7.0 A - Peak 10 Base Current - Continuous ls 4.0 A Total Power Dissipation @T,=25C Py 60 Ww Derate above 25C 0.48 wre {Operating and Storage Junction Ty .Ts1 c Temperature Range - 65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 2.08 c ~ ist Feb L A rf wt ge o. FIGURE -1 POWER DERATING 88s 8 Ba _ o Py , POWER DISSIPATION(WATTS) of R 50 7 100 125 150 To , TEMPERATURE(*C) PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR(CASE) DIM MILLIMETERS MIN MAX A 14.68 15.31 B 9.78 | 10.42 Cc .01 6.52 D 13.06 | 14.62 E 3.57 407 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 422 498 J 1.14 1.38 K 2.20 297 L 0.33 0.55 M 2.48 2.98 3.70 3.90BU406, BU407 NPN a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol! Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) . Vceoisus) V (Ig = 100 mA, I, = 0) BU406 200 BU407 150 Collector Cutoff Current loes mA ( Veg = 400 V, Vag= 9 ) BU406 5.0 ( Veg = 330 V, Vag= 0 ) BU407 5.0 Emitter Cutoff Current lepo mA ( Veg= 6.0 V, Ip =0) 1.0 ON CHARACTERISTICS (1) DC Current Gain hFE (le =2.0A, Vog = 5.0V) 30(typ) Collector - Emitter Saturation Voitage VoEjsat) Vv (I, =5.0A, I, =0.5A) 1.0 Base - Emitter Saturation Voltage VeE{sat) Vv (Ig =5.0A, I, =0.5A) 1.2 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product f, MHz (lg =O.5A, Voge = 10 V, f = 1.0 MHz) 10 Output Capacitance Cop pF (Veg=10V, |_=0, f=1.0 MHz ) 80(typ) SWITCHING CHARACTERISTICS Fall Time ts us (Vee=40 V, Ip=5.0 A, Igy=-Igo= 0.6A, L=150 ul) 0.75 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0%BU406,BU407 NPN a DC CURRENT GAIN T,=100C hre , OC CURRENT GAIN 0.1 0.2 0.5 1.0 2.0 5.0 10 lc , COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE OPERATING AREA (SOA) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typq=150 C;T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided T.ypys150C,At high case temperatures, thermal limita - tion will reduce the power that can be handied to values less than the limitations imposed by second breakdown. -~-- Bonding Wire Limit Second Breakdown Thermally Limited lc , COLLECTOR CURRENT (Amp) t 2 5 10 20 50 100 200 Vce , COLLECTOR EMITTER VOLTAGE (VOLTS)