UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R206-006,B
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC MMBTA13 is a Darlington transistor.
FEATURES
*Collector-Emitter Voltage: VCES = 30V
*Collector Dissipation: Pc (mas) = 350 mW
MARKING
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCES 30 V
Emitter-Base Voltage VEBO 10 V
Collector Dissipation Pc 350 mW
Collector Current Ic 500 mA
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT
Collector-Emitter Breakdown Voltage BVCES Ic=100µA,IB=0 30 V
Collector Cut-Off Current ICBO VCB=30V,IE=0 100 nA
Emitter Cut-Off Current IEBO VEB=10V,Ic=0 100 nA
DC Current Gain hFE VCE=5V,Ic=100mA 10000
Collector-Emitter Saturation Voltage VCE(sat) Ic=100mA,IB=0.1mA 1.5 V
Base-Emitter on Voltage VBE(on) VCE=5V,Ic=100mA 2.0 V
Current Gain Bandwidth Product fT VCE=5V,Ic=10mA,
f=100MHz
125 MHz
Pulse test: Pulse Width<300µs, Duty Cycle=2%
1M
UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R206-006,B
TYPICAL CHARACTERISTICS
I(tot)
mA
0.1 10
100k
Current Gain & Collector Current
1 100 1000
10k
Collector Current (mA)
1000k
hFE
hFE@VCE=5V
I(tot)
mA
0.1 10
1000
On Voltage & Collector Current
1 100 1000
100
Collector Current (mA)
10000
On Voltage (mV)
VBE(on)@VCE=5V
I(tot)
mA
10
100
Cutoff Frequency & Collector Current
1 100 1000
10
Collector Current (mA)
1000
Cutoff Frequency (MHz)
VCE=5V
I(tot)
mA
10
1000
Saturation Voltage & Collector Current
1100
1000
100
Collector Current (mA)
10000
Saturation Voltage (mV)
VBE(sat)@IC=100IB
VCE(sat)@IC=100IB
I(tot)
mA
10
Capacitance & Reverse-Biased Voltage
1 100
1
Reverse-Biased Voltage(V)
10
Capacitance (pF)
Cob
I(tot)
mA
10
Safe Operating Area
1 100
1
Forward Voltage-VCE(V)
10
Collector Current -Ic (mA)
PT=100ms
1000
100
PT=1s
PT=1ms
UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 3
QW-R206-006,B
I(tot)
mA
25
Power-Dissipation
vs Ambient Temperature
050
0
PD-Power Dissipation(W)
10075 125 150
0.25
0.5
0.75
1
Temperature (℃)
