Ordering Information ou peQerzaess ooowzua a weir wt P-Channel Enhancement-Mode Vertical DMOS Power FETs wv BV iss / Roscony loon Order Number / Package BV ics (max) (min) TO-3 TO-39 TO-220 DICE -160V 2.52 -4.0A VP1216N1 VP1216N2 VP1216N5 VP1216ND -200V 2.52 -4.0A VP1220N1 VP1220N2 VP1220N5 VP1220ND Features Advanced DMOS Technology Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- . . ize a vertical DMOS structure and Supertex's well-proven silicon- OC) Low power drive requirement gate manufacturing process. This combination produces devices O Ease of paralleling with the power handling capabilities of bipolar transistors and with oo, : the high input impedance and negative temperature coefficient O Low C,,and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, Pn these devices are free from thermal runaway and thermally- O Excellent thermal stability induced secondary breakdown. (Integral Source-Drain diode Supertex Vertical DMOS Power FETs are ideally suited to a wide ( High input impedance and high gain range of switching and amplifying applications where high break- . down voltage, high input impedance, low input capacitance, and ( Complementary N- and P-Channel devices fast switching speeds are desired. Applications Package Options (Notes 4 and 2) O Motor control 0 Convertors O Amplifiers 0 Switches (2 Power supply circuits (1 Driver (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BV oss Drain-to-Gate Voltage BV pes Gate-to-Source Voltage +20V Operating and Storage Temperature -B5C to +150C Soldering Temperature* 300C TO-39 TO-220 70-3 Note 1: See Package Outline section for discrete pinouts. Note 2: See Array section for quad pinouts. Distance of 1.6 mm fram case for 10 seconds. 9-61 pee eM ee eeSUPERTEX INC Ol pe az7ae9s OOOL?y4 Oo T : sas VPi2C Thermal Characteristics a aE 1 39-19 Package 1, (continuous)* 1, (pulsed)* Power Dissipation 4, e Go lon lope : @T, = 25C CWW C/W TO-3 -4.5A -8.0A {OOW 30 1.25 -4.5A -8.0A TO-39 -2.0A -4.5A 6.5W 125 20 -2.0A -4.5A TO-220 -3.5A -6.0A 45wW 70 2.75 -3.5A -6.0A Ip (Continuous) is limited by max rated qT, Electrical Characteristics (@ 25c unless otherwise specified) (Notes 1 and 2) Symbol Parameter Min Typ Max Unit Conditions BVoss Drain-to-Source VP1220 | -200 v 10mA, V 0 Breakdown Voltage VP1216 | -160 D> Yes = Veesithy Gate Threshold Voltage 15 3.5 Vv Veg = Vpg: |p = -10MA AV asain) Change in Vagq,) With Temperature 3.5 | -4.5 | mvc Vos = Vg: Ip = -10mA less Gate Body Leakage -100 nA Vag = t20V, V,, = 0 loss Zero Gate Voltage Drain Current -1.0 -100 BA Vag = 9, Vog = Max Rating 40 mA Veg = 0, Vag = 0.8 Max Rating T, = 125C Inron) ON-State Drain Current -0.5 | -1.0 A Veg = SV, Vig = -25V 4.0 | -7.0 Veg =-10V, Vog=-25V Roston) Static Drain-to-Source 2.0 4.0 Q Veg = 5V, |, = -0.5A ON-State Resistance 1.6 25 Veg = 710V, |, = -1.0A AR sion) Change in Fy gioy With Temperature 0.5 1.0 PC I, = -1A, Veg = -10V Ges Forward Transconductance 0.8 1.2 Oo Vos = -25V, |, =-3.0A Cc input Capacitance 600 650 Iss np! pi - Veg = 9, Vag = -25V Coss Common Source Output Capacitance 200 250 pF t-1MHz Case Reverse Transfer Capacitance 20 30 t Turn-ON Delay Time 30 40 poe Vop = -15V t, Rise Time 26 35 t Turn-OFF Delay Ti 4] of [p= 2.0A GOFF) urn- alay Time R, = 500 th Fall Time 20 40 Vp Diode Forward Voltage Drop 14 -2.0 Vv Isp = -0.5A, Ves =0 t, Reverse Recovery Time 500 ns lop = -0.5A, Vag = 0 Note 1: All D.C, parameters 100% tested at 25C unless otherwise stated. (Pulse test: 3001s pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10% net tON) t(OFF) ta(ON) | & tq(OFF), tt Output a 9-62 SCOPE D.U.T. apo vm YE Crem RMT RE ge ey HyeSUPERTEX INC Typical Performance Curves Output Characteristics a Ww iv w a = < 2 0 25 5O Vps (VOLTS) Transconductance Vs. Drain Current Vps = a 2 ky = Ww 8 wn wu 9 0 ~3 ~6 -9 Ip (AMPERES) Maximum Rated Safe Operating Area a Mi w a = < 2 Li BY BVDSS -1 10 100 1000 Vos (VOLTS) Pulse Condition: 300 us,2% dutycycle. 9-63 mn eee PD (WATTS) Ip (AMPERES) THERMAL RESISTANCE (NORMALIZED) oy pejarrae5s cooizus 1 VP12C 7T-39-/7 Saturation Characteristics 0 5 -10 Vps (VOLTS} Power Dissipation Vs. Case Temperature 100 TO-3 25 #50 75 100 126 150 Tc Cc) Thermal Response Characteristics 0.001 0.01 0.1 1 10 tp (SECONDS}SUPERTEX INC i BVDSS Variation with Temperature 6 eT} N g fc 3 g Hn uy a > ao 50 0 50 400 150 Ty PC) Transfer Characteristics Tae Gg w iv Ww a e x 8 0 -2 4 +6 -8 -10 Vas (VOLTS) Capacitance Vs. Drain-to-Source Voltage 1000 =14MHz \ fae Ciss a F < 500 Ww o 6 = 0 __ Coss CRss 0 Q 10 20 -30 ~40 Vos (VOLTS) 9-64 O14 DE Pfazzaess QOOM74b 3 i VP120 7-39-13 ON-Resistance Vs. Drain Currant 76 6.0 a = 5 46 2 9 a 30 G 15 0 0 -15 -3.0 -4.5 ~6.0 7.6 (ps (AMPERES) Vith) and RDS Variation with Temperature 1.3 Ip=-1A D=-%A 1.2 a nf m7 N N 3 z rm $ = G 9 3 2 < 1.0 Zz = S a a o tf 09 0.8 60 0 50 400 150 Ty CC Gate Drive Dynamic Characteristics Vos =-1 er a 2 8 > 9 5 10 15 Qc {NANOCOULOMBS)