HEXFET® Power MOSFET
S
D
G
Benefits
lImproved Gate, Avalanche and Dynamic dV/dt
Ruggedness
lFully Characterized Capacitance and Avalanche
SOA
lEnhanced body diode dV/dt and dI/dt Capability
l Lead-Free
lRoHS Compliant, Halogen-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
D2Pak
IRFS4410ZPbF
TO-220AB
IRFB4410ZPbF
TO-262
IRFSL4410ZPbF
S
D
G
S
D
G
S
D
G
DDD
GDS
Gate Drain Source
V
DSS
100V
R
DS(on)
typ.
7.2m
:
max. 9.0m
:
I
D (Silicon Limited)
97A
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
Form Quantity
IRFB4410ZPbF TO-220 Tube 50 IRFB4410ZPbF
IRFSL4410ZPbF
TO-262
Tube
50
IRFSL4410ZPbF
Tube 50
IRFS4410ZPbF
Tape and Reel Left 800 IRFS4410ZTRLPbF
Tape and Reel Right 800 IRFS4410ZTRRPbF
Base Part Number Package Type Standard Pack Orderable Part Number
IRFS4410ZPbF D2Pak
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
dv/dt Peak Diode Recovery
e
V/ns
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Av alanche Energy
d
mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy
f
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
j
––– 0.65
R
θ
CS
Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W
R
θ
JA
Junction-to-Ambient, TO-220
j
––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount) , D
2
Pak
ij
––– 40
300
Max.
97
69
390
242
See Fig. 14, 15, 22a, 22b,
230
16
-55 to + 175
± 20
1.5
10lb
x
in (1.1N
x
m)
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.143mH
RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 58A, di/dt ≤ 610A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
S
D
G
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
7.2
9.0
m
Ω
V
GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
I
DSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
R
G
Internal Gate Resistance
–––
0.70
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
gfs
Forward Transconductance
140
–––
–––
S
Q
g
Total Gate Charge
–––
83
120
nC
Q
gs
Gate-to-Source Charge
–––
19
–––
Q
gd
Gate-to-Drain ("Miller") Charge
–––
27
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
–––
56
–––
t
d(on)
Turn-On Delay Time
–––
16
–––
ns
t
r
Rise Time
–––
52
–––
t
d(off)
Turn-Off Delay Time
–––
43
–––
t
f
Fall Time
–––
57
–––
C
iss
Input Capacitance
–––
4820
–––
pF
C
oss
Output Capacitance
–––
340
–––
C
rss
Reverse Transfer Capacitance
–––
170
–––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
h
–––
420
–––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
g
–––
690
–––
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
–––
–––
97
A
(Body Diode)
I
SM
Pulsed Source Current
–––
–––
390
A
(Body Diode)
c
V
SD
Diode Forward Voltage
–––
–––
1.3
V
t
rr
Reverse Recovery Time
–––
38
57
ns
T
J
= 25°C
V
R
= 85V,
–––
46
69
T
J
= 125°C
I
F
= 58A
Q
rr
Reverse Recovery Charge
–––
53
80
nC
T
J
= 25°C
di/dt = 100A/μs
f
–––
82
120
T
J
= 125°C
I
RRM
Reverse Recovery Current
–––
2.5
–––
A
T
J
= 25°C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 58A
RG =2.7
Ω
VGS = 10V
f
VDD = 65V
ID = 58A, VDS =0V, VGS = 10V
f
TJ = 25°C, IS = 58A, VGS = 0V
f
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
c
VGS = 10V, ID = 58A
f
VDS = VGS, ID = 150μA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS =50V
Conditions
VGS = 10V
f
VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 80V
h
, See Fig.11
VGS = 0V, VDS = 0V to 80V
g
Conditions
VDS = 10V, ID = 58A
ID = 58A
VGS = 20V
VGS = -20V
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
≤60μs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
≤60μs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
0 20406080100
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 40V
VDS= 20V
ID= 58A
234567
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 50V
≤60μs PULSE WIDTH
-60 -40 -20 020 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 58A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
-60 -40 -20 020 40 60 80 100120140160180
TJ , Temperature ( °C )
90
95
100
105
110
115
120
125
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 5mA
-10 0 10 20 30 40 50 60 70 80 90 100
VDS, Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Energy (μJ)
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0 1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100μsec
1msec
10msec
DC
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
900
1000
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 6.4A
9.4A
BOTTOM 58A
25 50 75 100 125 150
TC , Case Temperature (°C)
0
20
40
60
80
100
ID, Drain Current (A)
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2
R1
R1R2
R2
τ
τC
Ci i/Ri
Ci= τi/Ri
Ri (°C/W) τi (sec)
0.237 0.000178
0.413 0.003772
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 58A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
Fig. 19 - Typical Stored Charge vs. dif/dtFig. 18 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Stored Charge vs. dif/dt
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th), Gate threshold Voltage (V)
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
100 200 300 400 500 600 700
dif/dt (A/μs)
0
50
100
150
200
250
300
350
400
450
Qrr (nC)
IF = 58A
VR = 85V
TJ = 25°C _____
TJ = 125°C
----------
100 200 300 400 500 600 700
dif/dt (A/μs)
0
50
100
150
200
250
300
350
400
Qrr (nC)
IF = 39A
VR = 85V
TJ = 25°C _____
TJ = 125°C ----------
100 200 300 400 500 600 700
dif/dt (A/μs)
0
5
10
15
20
IRRM (A)
IF = 58A
VR = 85V
TJ = 25°C _____
TJ = 125°C ----------
100 200 300 400 500 600 700
dif/dt (A/μs)
0
5
10
15
20
IRRM (A)
IF = 39A
VR = 85V
TJ = 25°C _____
TJ = 125°C ----------
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
1K
VCC
DUT
0
L
S
20K
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
VGS
VDD
VDS
LD
D.U.T
+
-
Second Pulse Width < 1μs
Duty Factor < 0.1%
VGS
VDS
90%
10%
td(on) td(off)
trtf
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
FB4410Z FB4410Z
PYWW?
LC LC
PART NUMBER
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
OR
YWWP
LC LC
PART NUMBER
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
IRFS4410Z FS4410Z
PYWW? YWWP
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
LC LC
PART NUMBER
OR ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
LC LC
PART NUMBER
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
TO-262 Part Marking Information
TO-262 Package Outline (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
FSL4410Z
PYWW?
FSL4410Z
YWWP
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
PART NUMBER
OR
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
LC LC
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
LC LC
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
D2Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
TO- 220 N/A
D2Pak
TO- 262
RoHS compliant
Qualification information
†
Industrial
(per JEDEC JESD47F
††
guidelines)
Yes
Qualification level
Moisture Sensitivity Level
MS L 1
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Revision History
Date Comment
•
Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 8, 9 & 10.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
4/25/2014
