C3D30065D VRRM = 650 V Silicon Carbide Schottky Diode IF (TC=135C) Z-Rec Rectifier (R) Qc = 89 nC** Features * * * * * * * = 36 A** Package 650 Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-247-3 Benefits * * * * * Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications * * * * Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Part Number Package Marking C3D30065D TO-247-3 C3D30065 Maximum Ratings (TC=25C unless otherwise specified) Symbol Parameter Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V 39/78 18/36 15/30 A TC=25C TC=135C TC=145C Continuous Forward Current (Per Leg/Device) Note Fig. 3 IFRM Repetitive Peak Forward Surge Current 66* 46* A TC=25C, tP=10 ms, Half Sine Pulse TC-110C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Peak Forward Surge Current 162 150 A TC=25C, tP=10 ms, Half Sine Pulse TC=110C, tP=10 ms, Half Sine Pulse Fig. 8 IF,Max Non-Repetitive Peak Forward Current 1400 1200 A TC=25C, tP=10 ms, Pulse TC=110C, tP=10 ms, Pulse Fig. 8 Ptot Power Dissipation(Per Leg/Device) 150 65 W TC=25C TC=110C Fig. 4 Diode dV/dt ruggedness 200 V/ns VR=0-600V 131* 112.5* A2s -55 to +175 C 1 8.8 Nm lbf-in dV/dt i2dt i2t value TJ , Tstg Operating Junction and Storage Temperature TO-247 Mounting Torque 1 Test Conditions VRRM IF * Value Per Leg, ** Per Device C3D30065D Rev. -, 09-2016 TC=25C, tP=10 ms TC=110C, tP=10 ms M3 Screw 6-32 Screw Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.45 2.0 1.8 2.4 V IF = 16 A TJ=25C IF = 16 A TJ=175C Fig. 1 IR Reverse Current 18.5 38.5 95 378 A VR = 650 V TJ=25C VR = 650 V TJ=175C Fig. 2 QC Total Capacitive Charge 44.5 nC VR = 400 V, IF = 16 A di/dt = 500 A/s TJ = 25C Fig. 5 C Total Capacitance 877.5 80 64 pF VR = 0 V, TJ = 25C, f = 1 MHz VR = 200 V, TJ = 25C, f = 1 MHz VR = 400 V, TJ = 25C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 6.2 J VR = 400 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RJC * Parameter Thermal Resistance from Junction to Case Typ. Unit Note 1* 0.5** C/W Fig. 9 Per Leg, ** Per Device Typical Performance (Per Leg) 30 TJ = -55 C 35 TJ = 25 C 30 TJ = 75 C 25 TJ = 125 C 20 TJ = 175 C 25 IR (A) 40 Reverse Leakage Current, IRR (uA) F Foward Current, IF (A) I (A) 45 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Foward VVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 C3D30065D Rev. -, 09-2016 20 TJ = 175 C TJ = 125 C 15 TJ = 75 C 10 TJ = 25 C TJ = -55 C 5 0 0 100 200 300 400 500 600 700 800 900 (V) VR (V) ReverseVVoltage, R Figure 2. Reverse Characteristics Typical Performance (Per Leg) 140 160 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 120 120 100 80 PTot (W) IF(peak) (A) 100 140 60 40 80 60 40 20 20 0 0 25 50 75 100 125 150 25 175 50 75 TC C 150 1000 Conditions: TJ = 25 C Ftest = 1 MHz Vtest = 25 mV 900 50 700 Capacitance C (pF) (pF) (nC) QC (nC) CapacitiveQCharge, C 800 40 30 20 600 500 400 300 200 10 100 0 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) R Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 175 Figure 4. Power Derating Conditions: TJ = 25 C 60 125 TC C Figure 3. Current Derating 70 100 C3D30065D Rev. -, 09-2016 0 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance (Per Leg) 16 1,000 12 10 IFSM (A) I (A) FSM Capacitance StoredE Energy, (mJ) EC (J) C 14 8 6 TJ_initial = 25 C TJ_initial = 110 C 100 4 2 10 10E-6 0 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) R 100E-6 1E-3 tp (s) Time, tp (s) Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Figure 7. Capacitance Stored Energy Thermal Resistance (C/W) 1 0.5 0.3 100E-3 0.1 0.05 0.02 10E-3 0.01 SinglePulse 1E-3 1E-6 10E-6 100E-6 1E-3 T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C3D30065D Rev. -, 09-2016 100E-3 1 10E-3 Package Dimensions ASE PACKAGE OUTLINE Advanced Package TO-247-3 Semiconductor Engineering Weihai, Inc. DWG NO. 98WHP03165A ISSUE O DATE Sep.05, 2016 POS A 2.29 2.54 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b3 .113 .133 2.87 3.38 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 IN e L P TO-247 3LD, Only For Cree COMPANY ASE Weihai SHEET 1 OF 3 Recommended Solder Pad Layout 5.21 .100 E4 TITLE: 4.83 .085 E2 E R .205 .090 E3 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) Max .190 .075 E1 M I L Min A1 E NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. Millimeters Max A2 D2 e Inches Min L1 N OP .037 .049 0.95 1.25 .620 .635 15.75 16.13 .516 .557 13.10 14.15 5.10 Y R A .145 .201 3.68 .039 .075 1.00 1.90 .487 .529 12.38 13.43 .214 BSC 5.44 BSC .780 .800 .161 .173 .138 4.10 4.40 3.51 3.65 .144 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 17.5 REF W 3.5 REF X 4 REF Part Number Package Marking C3D30065D TO-247-3 C3D30065 TO-247-3 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering C3D30065D Rev. -, 09-2016 20.32 3 all units are in inches 5 19.81 Diode Model (Per Leg) Diode Model CSD04060 Vf T = VT + If*RT VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3) VfT = VT + If * RT VT = 0.94 + (TJ * -1.0*10-3) RT = 0.027 + (TJ * 2.8*10-4) VT Notes Y R A Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25C to 175C RT N I M I L * RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. * REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. E R P Related Links * * * Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright (c) 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D30065D Rev. -, 09-2016 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power