1C3D30065D Rev. -, 09-2016
C3D30065D
Silicon Carbide Schottky Diode
Z-Rec®
Features
Benets
Applications
Package
Maximum Ratings
Symbol Parameter Value Test Conditions Note
V
650 V
V
650 V
V
650 V
A
T
T
T
66*
AT
P
T
P
150 AT
P
T
P
ATP=10 m
TP=10 m
P
tot
150
65 T
T
VR
i
*
*
ATP
TP
T
J
1
***
Part Number Package Marking
VRRM
IF (TC=135˚C) **
Qc **
2C3D30065D Rev. -, 09-2016
15
20
25
30
35
40
45
Foward Current, I
F
(A)
TJ= -55 °C
TJ= 25 °C
TJ= 75 °C
TJ= 175 °C
TJ= 125 °C
0
5
10
15
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Foward Current, I
Foward Voltage, VF(V)
Electrical Characteristics (Per Leg)
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
V = 16 A TJ
= 16 A TJ
R
VR = 650 V TJ
VR = 650 V TJ
Q
VR = 16 A
it
TJ
VRJ
VRJ
VRJ
E VR
Thermal Characteristics
Symbol Parameter Typ. Unit Note
Rθ 1*
***
Typical Performance (Per Leg)
10
15
20
25
30
Reverse Leakage Current, I
RR
(uA)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 75 °C
T
= 25
°
C
0
5
10
0 100 200 300 400 500 600 700 800 900
Reverse Leakage Current, I
Reverse Voltage, V
R
(V)
T
J
= -55 °C
T
J
= 25
°
C
IF (A)
VF (V) VR (V)
IR (μA)
3C3D30065D Rev. -, 09-2016
60
80
100
120
140
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
0
20
40
25 50 75 100 125 150 175
60
80
100
120
140
160
0
20
40
25 50 75 100 125 150 175
Typical Performance (Per Leg)
30
40
50
60
70
Capacitive Charge, Q
C
(nC)
Conditions:
TJ= 25 °C
0
10
20
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, V
R
(V)
400
500
600
700
800
900
1000
Capacitance (pF)
Conditions:
TJ= 25 °C
Ftest = 1 MHz
Vtest = 25 mV
0
100
200
300
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, VR(V)
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
4C3D30065D Rev. -, 09-2016
6
8
10
12
14
16
Capacitance Stored Energy, E
C
(µJ)
0
2
4
0 100 200 300 400 500 600 700
Capacitance Stored Energy, E
Reverse Voltage, VR(V)
Typical Performance (Per Leg)
100
1,000
I
FSM
(A)
TJ_initial = 25 °C
TJ_initial = 110 °C
10
10E-6 100E-6 1E-3 10E-3
Time, tp(s)
tp (s)
IFSM (A)
VR (V)
EC(mJ)
100E-3
1
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
1E-3
10E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5C3D30065D Rev. -, 09-2016
Package Dimensions
Package TO-247-3
NOTE ;
1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT
OF JEDEC outlines TO-247 AD.
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
TITLE:
SHEET
COMPANY ASE Weihai
1 OF 3
ASE Advanced
Semiconductor
Engineering Weihai, Inc.
PACKAGE
OUTLINE ISSUE
DATE
DWG NO. 98WHP03165A
O
Sep.05, 2016
TO-247 3LD, Only For Cree
Recommended Solder Pad Layout
TO-247-3
POS Inches Millimeters
Min Max Min Max
A .190 .205 4.83 5.21
A1 .090 .100 2.29 2.54
A2 .075 .085 1.91 2.16
b .042 .052 1.07 1.33
b1 .075 .095 1.91 2.41
b3 .113 .133 2.87 3.38
c .022 .027 0.55 0.68
D .819 .831 20.80 21.10
D1 .640 .695 16.25 17.65
D2 .037 .049 0.95 1.25
E .620 .635 15.75 16.13
E1 .516 .557 13.10 14.15
E2 .145 .201 3.68 5.10
E3 .039 .075 1.00 1.90
E4 .487 .529 12.38 13.43
e.214 BSC 5.44 BSC
L .780 .800 19.81 20.32
L1 .161 .173 4.10 4.40
N 3
ØP .138 .144 3.51 3.65
Q .216 .236 5.49 6.00
S .238 .248 6.04 6.30
T 17.5° REF
W3.5° REF
X 4° REF
e
all units are in inches
PRELIMINARY
Part Number Package Marking
Note: Recommended soldering proles can be found in the applications note here:
66 C3D30065D Rev. -, 09-2016
Copyright © 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the thresh-
old limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC
(RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative
or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
toequipmentusedintheoperationofnuclearfacilities,life-supportmachines,cardiacdebrillatorsorsimilaremergencymedical
equipment,aircraftnavigationorcommunicationorcontrolsystems,orairtrafccontrolsystems.
Notes
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
RelatedLinks
Diode Model (Per Leg)
PRELIMINARY
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
T = VT T
VT J
RT J
