ZXM61P02F
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ZXM61P02F
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) ID
TA = 25°C
-20V 600mΩ @ VGS = -4.5V -0.92A
900mΩ @ VGS = -2.7V -0.75A
Description and Applications
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
Features and Benefits
• Fast switching speed
• Low on-resistance
• Low threshold
• Low gate drive
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
• Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXM61P02FTA P02 7 8 3000 Units
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Top View Equivalent Circuit
P02 = Product Type Marking Code
D
S
G
Top View
Pin Out
D
S
G
SOT23
P02
ZXM61P02F
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current VGS = 4.5V TA = 25°C (Note 5)
TA = 70°C (Note 5) ID -0.9
-0.7 A
Pulsed Drain Current (Note 6) IDM -4.9 A
Continuous Source Current (Body Diode) (Note 5) IS -0.9 A
Pulsed Source Current (Body Diode) (Note 6) ISM -4.9 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Linear Derating Factor PD 625
5 mW
mW/°C
Power Dissipation (Note 5)
Linear Derating Factor PD 806
6.4 mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 4) RθJA 200 °C/W
Thermal Resistance, Junction to Ambient (Note 5) RθJA 155 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
5. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature.
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Thermal Characteristics
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.1 μA VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS
(
th
)
-0.7 ⎯ ⎯ V ID = -250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 7) RDS (ON) ⎯ ⎯ 0.6 Ω VGS = -4.5V, ID = -0.61A
0.9 VGS = -2.7V, ID = -0.31A
Forward Transconductance (Notes 7 and 9) gfs 0.56 ⎯ ⎯ S VDS = -10V, ID = -0.31A
Diode Forward Voltage (Note 7) VSD ⎯ ⎯ -0.95 V
TJ = 25°C, IS = -0.61A, VGS = 0V
Reverse Recovery Time (Note 9) tr
r
⎯ 14.9 ⎯ ns TJ = 25°C, IF = -0.61A,
di/dt = 100A/μs
Reverse Recovery Charge (Note 9) Qr
r
⎯ 5.6 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss ⎯ 150 ⎯ pF VDS = -15V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ⎯ 70 ⎯
Reverse Transfer Capacitance Crss ⎯ 30 ⎯
Turn-On Delay Time (Note 8) td
(
on
)
⎯ 2.9 ⎯
ns VDD = -110V, ID = -0.93A,
RG ≅ 6.2Ω, RD ≅ 11Ω,
Turn-On Rise Time (Note 8) t
r
⎯ 6.7 ⎯
Turn-Off Delay Time (Note 8) td
(
off
)
⎯ 11.2 ⎯
Turn-Off Fall Time (Note 8) tf ⎯ 10.1 ⎯
Total Gate Charge (Note 8) Q
g
⎯ 3.5 ⎯ nC VDS = -16V, VGS = -4.5V,
ID = -0.61A
Gate-Source Charge (Note 8) Q
g
s ⎯ 0.5 ⎯
Gate-Drain Charge (Note 8) Q
g
d ⎯ 1.5 ⎯
Notes: 7. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
8. Switching characteristics are independent of operating junction temperature.
9. For design aid only, not subject to production testing.
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Typical Characteristics
ZXM61P02F
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Typical Characteristics - continued
Test Circuits
C
urrent
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basicgatechargewaveform
Switching time waveforms
D.U.T
50k
0.2F
12V Same as
D.U.T
VGS
VGS
VDS
VGQGS QGD
QG
VGS
90%
10%
t(on) t(on)
td(on)
tr
trtd(of )
VDS
VDD
RD
RG
Pulse width ⬍1S
Duty factor 0.1%
VDS
ID
IG
ZXM61P02F
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Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
ZXM61P02F
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ZXM61P02F
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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