© 2006 IXYS All rights reserved
GDS
G = Gate D = Drain
S = Source TAB = Drain
DS99435E(12/06)
PolarHVTM
Power MOSFET VDSS = 600 V
ID25 =26 A
RDS(on) ≤≤
≤≤
≤270 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤200 ns
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 μA 600 V
VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V
IGSS VGS = ±30 V, VDS = 0 V ±100 nA
IDSS VDS = VDSS 25 μA
VGS = 0 V TJ = 125°C 250 μA
RDS(on) VGS = 10 V, ID = 0.5 ID25 270 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 600 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ600 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC = 25°C26A
IDM TC = 25°C, pulse width limited by TJM 65 A
IAR TC = 25°C13A
EAR TC = 25°C40mJ
EAS TC = 25°C 1.2 J
dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 10 V/ns
TJ ≤ 150°C, RG = 5 Ω
PDTC = 25°C 460 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque (TO-3P&TO-247) 1.13/10 Nm/lb.in.
FCMounting force (PLUS220) 11..65/2.5..15 N/lb
Weight TO-247 6.0 g
TO-268 5.0 g
PLUS220 & PLUS220SMD 4.0 g
IXFH26N60P
IXFT26N60P
IXFV26N60P
IXFV26N60PS
TO-268 (IXFT)
GSD (TAB)
TO-247 (IXFH)
GSD (TAB)
PLUS220SMD (IXFV...S)
GS
D
PLUS220 (IXFV)
D (TAB)
Features
zFast Recovery diode
zUnclamped Inductive Switching (UIS)
rated
zInternational standard packages
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
Fig. 2. Extended Output C haracteristics
@ 25
º
C
0
6
12
18
24
30
36
42
48
54
60
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volt s
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 1. Output Characteristics
@ 2 5
º
C
0
4
8
12
16
20
24
01234567
V
D S
- Volt s
I
D
- Am pe res
V
GS =
10V
7V
5V
6V
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS = 20 V; ID = 0.5 ID25, pulse test 16 26 S
Ciss 4150 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 400 pF
Crss 27 pF
td(on) 25 ns
trVGS = 10 V, VDS = 0.5 ID25 27 ns
td(off) RG= 5 Ω (External) 75 ns
tf21 ns
Qg(on) 72 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 nC
Qgd 24 nC
RthJC 0.27 °C/W
RthCs (PLUS220 & TO-247) 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 26 A
ISM Repetitive 78 A
VSD IF = IS, VGS = 0 V, pulse test 1.5 V
trr IF = 25A, -di/dt = 100 A/μs 150 200 ns
IRM VR = 100V; VGS = 0 V 7 A
QRM 0.7 μC
Characteristic Curves
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
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© 2006 IXYS All rights reserved
Fig. 3. Output Characteristics
@ 125
º
C
0
4
8
12
16
20
24
0246810121416
V
D S
- Volt s
I
D
- Amp ere s
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to 0.5 I
D25
Value vs. Junctio n Temperature
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- No rma l i ze
d
I
D
= 26A
I
D
= 13 A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
3
6
9
12
15
18
21
24
27
30
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amp ere s
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.8
1.2
1.6
2
2.4
2.8
3.2
0 102030405060
I
D
- Amperes
R
D S ( o n )
- N orma l i ze
d
T
J
= 125
º
C
T
J
= 25
º
C
V
GS
= 10V
Fig. 7. Input Admitta nce
0
5
10
15
20
25
30
35
40
45
50
4 4.5 5 5.5 6 6.5 7 7.5
V
G S
- Volt s
I
D
- Am peres
T
J
= 125
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40 45 50
I
D
- Amperes
g
f s
- Siem ens
T
J
= -4 0
º
C
25
º
C
125
º
C
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
Fig. 11. Capac itanc e
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 1020304050607080
Q
G
- nanoCoul o mbs
V
G S
- Vo l t s
V
DS
= 300V
I
D
= 13 A
I
G
= 10 mA
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
70
80
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
S D
- Volts
I
S
- Ampe res
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 12. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R ( t h ) J C - ºC / W
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© 2006 IXYS All rights reserved
TO-268 (IXFT) Outline TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
1 2 3
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
PLUS220SMD (IXFV_S) Outline
PLUS220 (IXFV) Outline
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