HMC469MS8G / 469MS8GE v01.0605 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Typical Applications Features The HMC469MS8G /HMC469MS8GE is a dual RF/IF gain block & LO or PA driver: P1dB Output Power: +18 dBm * Cellular / PCS / 3G Output IP3: +34 dBm * Fixed Wireless & WLAN Supply (Vs): +5V to +12V * CATV, Cable Modem & DBS 14.9 mm2 Ultra Small 8 Lead MSOP Gain: 15 dB * Microwave Radio & Test Equipment General Description The HMC469MS8G & HMC469MS8GE are SiGe HBT Dual Channel Gain Block MMIC SMT amplifiers covering DC to 5 GHz. These versatile products contain two gain blocks, packaged in a single 8 lead plastic MSOP, for use as either separate cascadable 50 Ohm RF/IF gain stages, LO or PA drivers or with both amplifiers combined utilizing external 90 hybrids to create a high linearity driver amplifier. Each amplifier in the HMC469MS8G(E) offers 15 dB of gain, +18 dBm P1dB with a +34 dBm output IP3 at 850 MHz while requiring only 75 mA from a single positive supply. The combined dual amplifier circuit delivers up to +20 dBm P1dB with +35 dBm OIP3 for specific application bands through 4 GHz. Functional Diagram Electrical Specifi cations, Vs= 8.0 V, Rbias= 51 Ohm, TA = +25 C Parameter Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5 GHz DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.5 GHz 2.5 - 4.0 GHz 4.0 - 5.0 GHz DC - 3.0 GHz 3.0 - 5.0 GHz Min. Typ. 12.5 11 10 9 7.5 15 13 12 11 9.5 0.008 12 10 8 14 10 8 6 18 18 16 14 12.5 11 34 30 25 23 4.0 5.0 15 13 11 9.5 8 Max. 0.012 75 Note: Data taken with broadband bias tee on device output. All specifi cations refer to a single amplifi er. 9 - 44 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Units dB dB dB dB dB dB/ C dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dB dB mA HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 9 20 15 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 5 -5 12 8 -10 -15 +25C +85C -40C 4 -20 -25 0 0 1 2 3 4 5 6 7 8 0 1 FREQUENCY (GHz) 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 4 5 6 Output Return Loss vs. Temperature 0 -10 +25C +85C -40C -20 -10 +25C +85C -40C -15 -20 0 1 2 3 4 5 6 0 1 FREQUENCY (GHz) 3 4 5 6 5 6 Noise Figure vs. Temperature 10 -5 8 NOISE FIGURE (dB) 0 +25C +85C -40C -10 2 FREQUENCY (GHz) Reverse Isolation vs. Temperature REVERSE ISOLATION (dB) 3 FREQUENCY (GHz) Input Return Loss vs. Temperature -15 2 -15 -20 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 16 10 +25C +85C -40C 6 4 2 -25 0 0 1 2 3 4 FREQUENCY (GHz) 5 6 0 1 2 3 4 FREQUENCY (GHz) Data shown is of a single amplifi er. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 45 HMC469MS8G / 469MS8GE v01.0605 Psat vs. Temperature 22 22 20 20 18 18 16 16 14 14 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 12 10 8 6 12 10 8 +25C +85C -40C 6 +25C +85C -40C 4 4 2 2 0 0 0 1 2 3 4 5 6 0 1 2 FREQUENCY (GHz) 30 25 +25C +85C -40C 15 1 2 3 4 5 6 Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 35 0 30 24 18 12 Gain P1dB Psat IP3 6 0 5 6 7 8 9 10 11 12 Cross Channel Isolation 0 82 +85C -5 PATH ISOLATION (dB) 80 78 76 +25C 74 72 -40C 70 68 -10 INPUT1-OUTPUT2 -15 INPUT2-OUTPUT1 -20 -25 -30 -35 -40 -45 3.9 4 4.1 4.2 Vcc (Vdc) 4.3 4.4 4.5 4.6 0 1 2 3 4 5 6 FREQUENCY (GHz) Data shown is of a single amplifi er. 9 - 46 6 Vs (Vdc) Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 51 Ohms Icc (mA) 5 36 FREQUENCY (GHz) 66 3.8 4 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 75 mA @ 850 MHz 40 20 3 FREQUENCY (GHz) Output IP3 vs. Temperature IP3 (dBm) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 8 HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Input & Output Return Loss * 9 0 20 RETURN LOSS (dB) GAIN (dB) 15 10 +25C +85C -40C 5 0 INPUT RETURN LOSS OUTPUT RETURN LOSS -10 -20 -30 -5 -10 0.5 -40 1 1.5 2 2.5 0 3 0.5 FREQUENCY (GHz) 40 -10 35 -20 -30 -40 0.5 1 3 2.4 2.6 2.4 2.6 +25C +85C -40C 1.5 2 2.5 20 1.4 3 1.6 FREQUENCY (GHz) 1.8 2 2.2 FREQUENCY (GHz) Output P1dB* Output Psat* 22 20 20 18 18 Psat (dBm) 22 16 +25C +85C -40C 14 16 +25C +85C -40C 14 12 10 1.4 2.5 30 25 0 2 Output IP3* 0 IP3 (dBm) REVERSE ISOLATION (dB) 1.5 FREQUENCY (GHz) Reverse Isolation* P1dB (dBm) 1 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Gain* 12 1.6 1.8 2 2.2 FREQUENCY (GHz) 2.4 2.6 10 1.4 1.6 1.8 2 2.2 FREQUENCY (GHz) * Measurements shown are of both channels with 1.5 - 2.5 GHz 90 splitter/combiners on input & output (see application circuit for balanced operation). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 47 HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Absolute Maximum Ratings DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 Collector Bias Voltage (Vcc) +6.0 Vdc Collector Bias Current (Icc) 100 mA RF Input Power (RFIN)(Vcc = +4.2 Vdc) +17 dBm Junction Temperature 150 C Continuous Pdiss (T = 85 C) (derate 29.58 mW/C above 85 C) 1.92 W Thermal Resistance (junction to ground paddle) 33.8 C/W Storage Temperature -65 to +150 C Operating Temperature -40 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC469MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC469MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H469 XXXX [2] H469 XXXX [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX 9 - 48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Pin Descriptions Function Description 1 RFIN1 This pin is DC coupled. An off chip DC blocking capacitor is required. 8 RFOUT1 RF output and DC Bias (Vcc1) for the output stage. 2, 3, 6, 7 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 4 RFIN2 This pin is DC coupled. An off chip DC blocking capacitor is required. 5 RFOUT2 RF output and DC Bias (Vcc2) for the output stage. Ground Paddle GND Ground paddle must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Pin Number 9 - 49 HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Application Circuit for Balanced Operation DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Bias Resistor Values for Icc= 75 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 5V 6V 8V 10V 12V RBIAS VALUE 13 27 51 82 110 RBIAS POWER RATING 1/8 W 1/4 W 1/2 W 1/2 W 1W Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 9 - 50 50 900 1900 2200 2400 3500 5000 L1, L2 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 6.8 nH C4, C5, C9, C10 0.01 F 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC469MS8G / 469MS8GE v01.0605 SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Evaluation PCB List of Materials for Evaluation PCB 109164 [1] Item Description J1 - J4 PCB Mount SMA Connector J5 - J8 DC Pins L1, L2 Inductor, 0402 Pkg. C1, C8 2.2 F Capacitor, Tantalum C2, C7 1000 pF Capacitor, 0402 Pkg. C3, C6 100 pF Capacitor, 0402 Pkg. C4, C5, C9, C10 Capacitor, 0402 Pkg. R1, R2 Resistor, 2010 Pkg. U1 HMC469MS8G / HMC469MS8GE PCB [2] 109162 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 51