Semiconductor Group 1
PNP Silicon Darlington Transistors BSP 60
… BSP 62
5.91
Maximum Ratings
Pin Configuration
1 2 3 4
B C E C
Type Ordering Code
(tape and reel)
Marking Package1)
BSP 60
BSP 61
BSP 62
Q62702-P1166
Q62702-P1167
Q62702-P1168
BSP 60
BSP 61
BSP 62
SOT-223
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm ×40 mm ×1.5 mm/6 cm2 Cu.
Parameter Symbol Values Unit
Emitter-base voltage VEB0
Collector-base voltage VCB0
Junction temperature Tj˚C
Total power dissipation, TS = 124 ˚C Ptot W
Storage temperature range Tstg
Collector-emitter voltage VCER V
Thermal Resistance
Junction - ambient2) Rth JA ≤ 72 K/W
5
1.5
150
– 65 … + 150
45 60
BSP 60 BSP 61
80
BSP 62
Collector current ICA1
Peak collector current ICM 2
Junction - soldering point Rth JS ≤ 17
60 80 90
Base current IB0.1
●High collector current
●Low collector-emitter saturation voltage
●Complementary types: BSP 50 … BSP 52 (NPN)
Semiconductor Group 2
BSP 60
… BSP 62
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain2)
I
C = 150 mA, VCE = 10 V
I
C = 500 mA, VCE = 10 V
Collector-emitter breakdown voltage1)
I
C = 10 mA, RBE = 150 ΩBSP 60
BSP 61
BSP 62
VV(BR)CER 45
60
80
–
–
–
–
–
–
µACollector-emitter cutoff current
VCE = VCERmax,VBE = 0 ICES ––10
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Emitter-base breakdown voltage
I
E = 100 µA, IB = 0 V(BR)EB0 5––
V
Collector-emitter saturation voltage2)
I
C = 500 mA, IB = 0.5 mA
I
C = 1 A, IB = 1 mA
VCEsat –
––
–1.3
1.8
–hFE 1000
2000 –
––
–
MHzTransition frequency
I
C = 100 mA, VCE = 5 V, f = 100 MHz fT– 200 –
AC characteristics
ns
ns
Switching times
I
C = 500 mA, IB1 = IB2 = 0.5 mA
(see diagrams) ton
toff –
–400
1500 –
–
Collector-base breakdown voltage
I
C = 100 µA, IB = 0 BSP 60
BSP 61
BSP 62
V(BR)CB0 60
80
90
–
–
–
–
–
–
Emitter-base cutoff current
VEB = 4 V, IC = 0 IEB0 ––10
Base-emitter saturation voltage2)
I
C = 500 mA, IB = 0.5 mA
I
C = 1 A, IB = 1 mA
VBEsat –
––
–1.9
2.2
1) Compare RBE for thermal stability.
2) Pulse test conditions: t≤ 300 µs, D = 2 %.
Semiconductor Group 3
BSP 60
… BSP 62
Switching time test circuit
Switching time waveform
Semiconductor Group 4
BSP 60
… BSP 62
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max /Ptot DC =f(tp)
External resistance RBE = f (TA)**
VCB = VCE max
** RBE max for thermal stability
DC current gain hFE = f (IC)
VCE = 10 V
Semiconductor Group 5
BSP 60
… BSP 62
Collector-emitter saturation voltage
IC = f (VCE sat), IB-parameter
Transition frequency fT=f(IC)
VCE = 10 V, f = 100 MHz
Base-emitter saturation voltage
IC = f (VBE sat), IB-parameter
