es HEWLETT & PACKARD LINEAR POWER ctr sin COMPONENTS TRANSISTOR | (HXTR-5101) Features HIGH Pigg LINEAR POWER 23 dBm Typical at 2 GHz 22 dBm Typical at 4 GHz HIGH Pigg GAIN 13 dB Typical at 2 GHz 7.5 dB Typical at 4 GHz LOW DISTORTION HIGH POWER-ADDED EFFICIENCY MATCHING CONDITIONS INDEPENDENT OF OUTPUT POWER INFINITE SWR TOLERANCE ABOVE 2 GHz RUGGED HERMETIC PACKAGE Description /Applications The 2N6701 (HXTR-5101) is an NPN bipolar transistor de- signed for high output power and gain up to 5 GHz. To achieve excellent uniformity and reliability, the manufac- turing process utilizes ion implantation, self-alignment techniques and Ti/Pt/Au metallization. The chip has a dielectric scratch protection over its active area and Ta2N ballast resistors for ruggedness. The superior gain, power, and distortion performance of the 2N6701 commend it for applications in radar, ECM, space, and commercial and military telecommunications. The 2N6701 features both guaranteed power output and associated gain at 1 dB gain compression. The 2N6701 is supplied in the HPAC-100, a metal/ceramic hermetic package, and is capable of meeting the environmental requirements of MIL-S-19500 and the test requirements of MIL-STD-750/883. @2) BIPOLAR TRANSISTORS 2930 Electrical Specifications at Tease =25C *300us wide pulse measurement at <2% duty cycle. Recommended Maximum Continuous Operating Conditions Absolute Maximum Ratings * Notes: 1. Operation of this device in excess of any one of these conditions is Operation in excess of any one of these conditions may result in likely to result in a reduction in device mean time between failure permanent damage to this device. (MTBF) to below the design goal of 1 x 107 hours at Ty = 175C (assumed Activation Energy = 1.5 eV). Corresponds to maximum rating for 2N6701. . TCASE = 25C. . See Figure 7 for derating conditions. wnFigure 1. Typical Ga(max), Maximum Figure 2. Typical S2ie vs. Current at 2 and Stable Gain (Gms), and S21e vs. Frequency 4GHz. at Vce = 18V, Ic = 30mA. BIPOLAR TRANSISTORS Figure 3. Typical Piap Linear Power and Figure 4. Typical P1adg Linear Power and Associated 1dB Compressed Gain vs. Associated 1dB Compressed Gain vs. Frequency at Vce = 18V, Ic = 30mA. Current at Vce = 12 and 18V at 4GHz. Figure 5. Typical Noise Figure (Fmin) and Figure 6. Typical Two Tone 3rd Order Associated Gain (Ga) when tuned for Intermodulation Distortion at 4GHz for a Minimum Noise vs. Frequency at Vce = frequency separation of S5MHz at Vce = 18V, Ic = 10mA. Typical Noise Figure (Fp) 18V, Ic = 30MA. when tuned for Max PiaB at Vce = 18V, Ic = 30mA. 3132 Figure 7. Maximum Power Dissipation Figure 8. Typical 'ms, I'm, (calculated Curve for 6jc = 210 C/W, Timax = 200C. from the average S-parameters) in the 2 to 6GHz frequency range, at Vce = 18V, Ic = 30mA. Typical S-Parameters vce = 18v, ic =30mA