6 GHz to 18 GHz GaAs, pHEMT, MMIC,
Low Noise Amplifier
Data Sheet
HMC903
Rev. C Document Feedback
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FEATURES
Noise figure: 1.6 dB typical
Small signal gain: 19 dB typical
Output P1dB: 16 dBm typical
Single-supply voltage: 3.5 V at 90 mA typical
Output IP3: 27 dBm typical
50 Ω matched input/output
Self biased with optional bias control for quiescent drain
control (IDQ) reduction with no radio frequency (RF) applied
Die size: 1.33 mm × 1.08 mm × 0.102 mm
APPLICATIONS
Point to point radios
Point to multipoint radios
Military and space
Test instrumentation
GENERAL DESCRIPTION
The HMC903 is a gallium arsenide (GaAs), pseudomorphic high
electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC), low noise amplifier (LNA), which is
self biased with the optional bias control for IDQ reduction. The
device operates between 6 GHz and 18 GHz. This LNA provides
19 dB of small signal gain, 1.6 dB noise figure, and an output
third-order intercept (IP3) of 27 dBm, requiring only 90 mA of
supply current from a 3.5 V supply. The output power for a 1 dB
compression (P1dB) of 16 dBm enables the LNA to function as
a local oscillator (LO) driver for balanced, I/Q, or image rejection
mixers. The HMC903 also features inputs/outputs that are dc
blocked and internally matched to 50 Ω for ease of integration
into multichip modules (MCMs). All data is taken with the
HMC903 in a 50 Ω test fixture connected via 0.025 mm (1 mil)
diameter with bonds of 0.31 mm (12 mil) length.
FUNCTIONAL BLOCK DIAGRAM
HMC903
1RFIN
V
DD
1V
DD
2
RFOUT
V
GG
2
V
GG
1
23
4
5
6
14481-001
Figure 1.
HMC903 Data Sheet
Rev. C | Page 2 of 13
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Specifications ............................................................... 3
Absolute Maximum Ratings ............................................................ 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics..................................................................... 5
Typical Performance Characteristics ..............................................6
Theory of Operation .........................................................................8
Applications Information .................................................................9
Mounting and Bonding Techniques for Millimeterwave GaAs
MMICs ............................................................................................. 10
Handling Precautions ................................................................ 10
Typical Application Circuits ..................................................... 11
Assembly Diagrams ................................................................... 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
1/2018—Rev. B to Rev. C
Changes to Table 3 ............................................................................ 4
7/2017—Rev. A to Rev. B
Changed HMC903-Die to HMC903 ........................... Throughout
Changes to RF Input Power Parameter, Table 2 ........................... 4
This Hittite Microwave Products data sheet has been reformatted to
meet the styles and standards of Analog Devices, Inc.
3/2017—Rev. 01.0712 to Rev. A
Updated Format .................................................................. Universal
Changes to Features Section ............................................................ 1
Changes to Table 1 ............................................................................. 3
Added Electrostatic Discharge (ESD) Sensitivity, Human Body
Model (HBM) Parameter, Table 2 ................................................... 4
Changes to Table 3 ............................................................................. 5
Added Theory of Operation Section and Figure 19; Renumbered
Sequentially ......................................................................................... 8
Added Applications Information Section ...................................... 9
Changes to Figure 20 and Figure 21 ............................................ 10
Added Typical Application Circuits Section and Figure 22 and
Figure 23 .......................................................................................... 11
Updated Outline Dimensions ....................................................... 13
Changes to Ordering Guide .......................................................... 13
Data Sheet HMC903
Rev. C | Page 3 of 13
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
TA = 25°C, VDD1 = VDD2 = 3.5 V, I DQ = 90 mA. VGG1 = VGG2 = open for normal, self biased operation.
Table 1.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 6 18 GHz
GAIN 17 19 dB
Gain Variation over Temperature 0.013 dB/°C
RETURN LOSS
Input 11 dB
Output 13 dB
OUTPUT
Output Power for 1 dB Compression
P1dB
16
dBm
Saturated Output Power PSAT 18 dBm
Output Third-Order Intercept IP3 27 dBm
NOISE FIGURE NF 1.6 2.1 dB
SUPPLY CURRENT IDQ 90 mA VDD = 3.5 V, VGG1 = VGG2 = open
HMC903 Data Sheet
Rev. C | Page 4 of 13
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Drain Bias Voltage 4.5 V
RF Input Power
20 dBm
Gate Bias Voltages
VGG1 −2 V to +0.2 V
VGG2 −2 V to +0.2 V
Channel Temperature 175°C
Continuous Power Dissipation, PDISS (T =
85°C, Derate 6.9 mW/°C Above 85°C)
0.62 W
Thermal Resistance (Channel to Die Bottom) 144.8°C/W
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −55°C to +85°C
Electrostatic Discharge (ESD) Sensitivity,
Human Body Model (HBM)
Class 0, passed 150 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Data Sheet HMC903
Rev. C | Page 5 of 13
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
HMC903
1RFIN
VDD1VDD2
RFOUT
VGG2
VGG1
23
4
5
6
14481-002
Figure 2. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. Mnemonic Description
1 RFIN Radio Frequency Input. This pad is matched to 50 Ω. See Figure 3 for the interface schematic.
2, 3
V
DD
1, V
DD
2
Power Supply Voltages. Power supply voltage for the amplifier. See Figure 24 and Figure 25 for required
external components. See Figure 4 for the interface schematic.
4 RFOUT Radio Frequency Output. This pad is matched to 50 Ω. See Figure 5 for the interface schematic.
5, 6 VGG2, VGG1 Gate Control Voltages. Optional gate control for amplifier. When left open, the amplifier is self biased.
Applying a negative voltage reduces the current. See Figure 6 for the interface schematic.
Die Bottom GND Ground. Die bottom must be connected to RF/dc ground. See Figure 7 for the interface schematic.
INTERFACE SCHEMATICS
RFIN
14481-003
ESD
Figure 3. RFIN Interface Schematic
VDD1, VDD2
14481-004
Figure 4. VDD1, VDD2 Interface Schematic
RFOUT
14481-005
ESD
Figure 5. RFOUT Interface Schematic
V
GG
1, V
GG
2
14481-006
Figure 6. VGG1, VGG2 Interface Schematic
GND
14481-007
Figure 7. GND Interface Schematic
HMC903 Data Sheet
Rev. C | Page 6 of 13
TYPICAL PERFORMANCE CHARACTERISTICS
25
15
–5
5
–15
–253211917151311975
BROADBAND G AIN AND RETURN LOSS ( dB)
FRE Q UE NCY ( GHz)
S11
S21
S22
14481-008
Figure 8. Broadband Gain and Return Loss vs. Frequency
0
–5
–10
–15
–20
–30
–25
61816141210
8
INPUT RETURN LOSS ( dB)
FRE Q UE NCY ( GHz)
–55°C
+25°C
+85°C
14481-009
Figure 9. Input Return Loss vs. Frequency at Various Temperatures
6
4
5
3
2
1
0618161412108
NOISE FIGURE (dB)
FRE Q UE NCY ( GHz)
–55°C
+25°C
+85°C
14481-010
Figure 10. Noise Figure vs. Frequency at Various Temperatures
25
23
19
21
17
15 6 8 10 12 14 16 18
GAI N (dB)
FREQUENCY ( GHz)
–55°C
+25°C
+85°C
14481-011
Figure 11. Gain vs. Frequency at Various Temperature
0
–5
–10
–15
–20
–30
–25
618161412108
OUTPUT RE TURN LOSS ( dB)
FRE Q UE NCY ( GHz)
–40°C
+25°C
+85°C
14481-012
Figure 12. Output Return Loss vs. Frequency at Various Temperatures
35
25
30
20
15
10
5618161412108
OUTPUT IP3 (dBm)
FRE Q UE NCY ( GHz)
–40°C
+25°C
+85°C
14481-013
Figure 13. Output IP3 vs. Frequency as Various Temperatures
Data Sheet HMC903
Rev. C | Page 7 of 13
25
20
10
15
5
0618161412108
P1d B ( dBm)
FRE QUENCY ( GHz)
–55°C
+25°C
+85°C
14481-014
Figure 14. P1dB vs. Frequency at Various Temperatures
0
–10
–20
–30
–40
–60
–50
618161412108
REVERSE ISOLATION (d B)
FRE Q UE NCY ( GHz)
–55°C
+25°C
+85°C
14481-015
Figure 15. Reverse Isolation vs. Frequency at Various Temperatures
25
20
10
15
5
0618161412108
PSAT (d Bm)
FRE Q UE NCY ( GHz)
–55°C
+25°C
+85°C
14481-016
Figure 16. PSAT vs. Frequency at Various Temperatures
24
20
16
12
8
4
0
–4
–21 –18 –15 –12 –9 –6 –3 0 3
P
OUT
(d Bm) , GAIN (d B) , PAE ( %)
INPUT POWE R ( dBm)
PAE
P
OUT
GAIN
14481-017
Figure 17. POUT, Gain, and Power Added Efficency (PAE) vs. Input Power at 12 GHz
22
8
10
12
16
20
14
18
3.0 3.5 4.0
GAI N (dB) , P1d B ( dBm)
V
DD
(V)
7
6
5
4
3
2
1
0
NOISE FIGURE (dB)
NOISE FIGURE
GAIN
P1dB
14481-018
Figure 18. Gain, P1dB, and Noise Figure vs. Supply Voltage (VDD) at 12 GHz
HMC903 Data Sheet
Rev. C | Page 8 of 13
THEORY OF OPERATION
The HMC903 is a GaAs, pH EM T, MMIC, low noise amplifier.
The HMC903 amplifier uses two gain stages in series. The basic
schematic for the amplifier is shown in Figure 19, which forms a
low noise amplifier operating from 6 GHz to 18 GHz with excellent
noise figure performance.
RFIN RFOUT
V
DD
1 V
DD
2
V
GG
1V
GG
2
14481-019
Figure 19. Basic Schematic for the HMC903
The HMC903 has single-ended input and output ports with
impedances nominally equal to 50 Ω over the 6 GHz to 18 GHz
frequency range.
Consequently, the device can be directly inserted into a 50 Ω
system with no required impedance matching circuitry; therefore,
multiple HMC903 amplifiers can be cascaded back to back
without the need for external matching circuitry.
The input and output impedances are sufficiently stable vs.
variations in temperature and supply voltage that no impedance
matching compensation is required.
It is critical to supply very low inductance ground connections
to the exposed pad to ensure stable operation. To achieve optimal
performance from the HMC903 and to prevent damage to the
device, do not exceed the absolute maximum ratings.
Data Sheet HMC903
Rev. C | Page 9 of 13
APPLICATIONS INFORMATION
Figure 25 shows the basic connections for operating the HMC903
in self biased operation. Both the RFIN and the RFOUT ports
have on-chip dc block capacitors, eliminating the need for
external ac coupling capacitors.
The HMC903 has VGG1 and VGG2 optional gate bias pads. When
these pads are left open, the amplifier runs in self biased operation
with typical IDQ = 90 mA when VDD = 3.5 V. When using the
optional VGG1 and VGG2 gate bias pads, use the recommended
bias sequencing to prevent damage to the amplifier.
The recommended bias sequence during power-up is as follows:
1. Connect to GND.
2. Set VGG1 and VGG2 to −2 V.
3. Set VDD1 and VDD2 to +3.5 V.
4. Increase VGG1 and VGG2 to achieve a typical IDQ = 90 mA.
5. Apply the RF signal.
The recommended bias sequence during power-down is as follows:
1. Turn off the RF signal.
2. Decrease VGG1 and VGG2 to −2 V to achieve a typical IDQ =
0 mA.
3. Decrease VDD1 and VDD2 to 0 V.
4. Increase VGG1 and VGG2 to 0 V.
The bias conditions previously listed (VDD1 and VDD2 = 3.5 V
and IDQ = 90 mA) are the recommended operating points to
achieve optimum performance. The data used in this data sheet
is taken with the recommended bias conditions listed in the
Electrical Specifications section. If the HMC903 is used with
different bias conditions than what is recommended, a different
performance than what is shown in the Typical Performance
Characteristics section can result. Decreasing the VDD level has
a negligible effect on gain and NF performance, but reduces
P1dB. This behavior is shown in Figure 18. For applications
where the P1dB requirement is not stringent, the HMC903 can
be down biased to reduce power consumption.
HMC903 Data Sheet
Rev. C | Page 10 of 13
MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS
The HMC903 is attached directly to the ground plane
eutectically or with conductive epoxy (see the General Handling
section, the Mounting section, and the Wire Bonding section).
The 50 Ω microstrip transmission lines on 0.127 mm (5 mil)
thick alumina thin film substrates are recommended for
bringing RF to and from the HMC903 (see Figure 20). When
using 0.254 mm (10 mil) thick alumina thin film substrates, the
die is raised 0.150 mm (6 mil) so the surface of the die is coplanar
with the surface of the substrate. One way to accomplish this is
to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil)
thick molybdenum heat spreader (moly tab), which then attaches
to the ground plane (see Figure 21).
RF G ROUND PLANE
0.102mm (0.004") THICK GaAs MM IC
WI RE BOND
0.127mm (0.005") THICK ALUMINA
THIN FILM SUBSTRATE
0.076mm
(0.003")
14481-020
Figure 20. Routing RF Signal
RF G ROUND PLANE
0.102mm (0.004") THICK GaAs MM IC
WI RE BOND
0.254mm (0.010") THICK ALUMINA
THIN FILM SUBSTRATE
0.150mm
(0.006") THI CK
MOLY TAB
0.076mm
(0.003")
14481-021
Figure 21. Routing RF Signal with Moly Tab
Microstrip substrates are placed as close to the die as possible to
minimize bond wire length. Typical die to substrate spacing is
0.076 mm to 0.152 mm (3 mil to 6 mil).
HANDLING PRECAUTIONS
Follow the precautions detailed in the following sections to
avoid permanent damage to the device.
Storage
All bare die are placed in either waffle or gel-based ESD protective
containers and then sealed in an ESD protective bag for shipment.
After opening the sealed ESD protective bag, store all die in a
dry nitrogen environment.
Cleanliness
Handle the chips in a clean environment. Do not attempt to
clean the chip using liquid cleaning systems.
Static Sensitivity
Follow ESD precautions to protect against ESD strikes.
Transients
Suppress instrument and bias supply transients while bias is
applied. Use the shielded signal and bias cables to minimize
inductive pickup.
General Handling
Handle the chip along the edges with a vacuum collet or with a
sharp pair of bent tweezers. The surface of the HMC903 has
fragile air bridges and must not be touched with the vacuum
collet, tweezers, or fingers.
Mounting
The HMC903 is back metallized and can be die mounted with
gold tin (AuSn) eutectic preforms or with electrically
conductive epoxy. The mounting surface must be clean and flat.
Eutectic Die Attach
An 80% gold/20% tin preform is recommended with a work
surface temperature of 255°C and a tool temperature of 265°C.
When hot 90% nitrogen/10% hydrogen gas is applied, the tool
tip temperature is 290°C. Do not expose the chip to a temperature
greater than 320°C for more than 20 sec. No more than 3 sec of
scrubbing is required for attachment.
Epoxy Die Attach
Apply a minimum amount of epoxy to the mounting surface so
that a thin epoxy fillet is observed around the perimeter of the
HMC903 after it is placed into position. Cure epoxy per the
schedule of the manufacturer.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These
bonds are thermosonically bonded with a force of 40 g to 60 g.
DC bonds of 0.001 in (0.025 mm) diameter, thermosonically
bonded, are recommended. Create ball bonds with a force of
40 g to 50 g and wedge bonds at 18 g to 22 g. Create bonds with
a nominal stage temperature of 150°C. A minimum amount of
ultrasonic energy is applied to achieve reliable bonds. All bonds
are as short as possible, less than 12 mil (0.31 mm).
Data Sheet HMC903
Rev. C | Page 11 of 13
TYPICAL APPLICATION CIRCUITS
RFIN RFOUT
VGG2
VDD2
VDD1
VGG1
4.7µF 0.01µF 100pF
4.7µF 0.01µF 100pF 4.7µF100pF 0.01µF
4.7µF100pF 0.01µF
1
2
65
3
4
14481-024
Figure 22.Typical Application Circuit with Gate Control Option
RFIN RFOUT
V
DD
2
V
DD
1
4.7µF 0.01µF 100pF 4.7µF100pF 0.01µF
1
23
4
14481-025
Figure 23. Typical Application Circuit with Self Biased Option
HMC903 Data Sheet
Rev. C | Page 12 of 13
ASSEMBLY DIAGRAMS
100pF
TO V
DD
2 SUPPLY
ALL BOND WIRE S ARE 1mil DIAMETER
3mil NOMINAL GAP
TO V
GG
2 SUPPLY
TO V
GG
1 SUPPLY
TO V
DD
1 SUPPLY
50Ω TRANSMISSION LINE
100pF
100pF
100pF
0.01µF 0.01µF
0.01µF 0.01µF
4.7µF
4.7µF
4.7µF
4.7µF
V
DD
1V
DD
2
V
GG
2
V
GG
1
RFIN
RFOUT
14481-022
Figure 24. Assembly Diagram with Gate Control Option
50Ω TRANSMISSION LINE
TO VDD1 SUP PLY TO VDD2 SUP PLY
ALL BOND WI RE S ARE 1mil DI AM E TER
3mil NOMINAL GAP
100pF 100pF
4.7µF
4.7µF
0.01µF 0.01µF
VGG2
VGG1
VDD1VDD2
RFIN
RFOUT
14481-023
Figure 25. Assembly Diagram with Self Biased Option
Data Sheet HMC903
Rev. C | Page 13 of 13
OUTLINE DIMENSIONS
12-22-2016-A
*AIRBRIDGE
AREA
1.080
1.330 0.102
SIDE VIEW
TOP VIEW
0.338 0.299
0.367
0.535 0.150 0.450
0.186
0.070
0.022
0.099
0.265
0.392
0.200
0.245
0.200
*This die utilizes fragile air bridges. Any pickup tools used must not cont act t his ar ea.
1
23
4
5
6
Figure 26. 6-Pad Bare Die [CHIP]
(C-6-10)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option
HMC903 −55°C to +85°C 6-Pad Bare Die [CHIP] C-6-10
HMC903-SX −55°C to +85°C 6-Pad Bare Die [CHIP] C-6-10
1 The HMC903-SX is a sample order of two devices.
©2018 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D14481-0-1/18(C)
