SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=-800mA. DC Current Gain : hFE=100630 (VCE=-1V, Ic=-100mA). For Complementary with NPN type BC338. N E K G J D MAXIMUM RATING (Ta=25) UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Emitter Current IE 800 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range H F F 1 2 3 C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC DIM A B C D E F G H J K L M N 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - -100 nA Collector Cut-off Current ICBO VCB=-25V, IE=0 DC Current Gain (Note) hFE VCE=-1V, IC=-100mA 100 - 630 Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V Base-Emitter Voltage VBE(ON) VCE=-1V, IC=-300mA - - -1.2 V Transition Frequency fT VCE=-5V, IC=-10mA, f=100MHz - 100 - MHz VCB=-10V, f=1MHz, IE=0 - 16 - pF Cob Collector Output Capacitance Note : hFE Classification none:100630, 2000. 2. 28 16:100250, Revision No : 2 25:160400, 40:250630 1/2 BC328 -800 V CE -600 3k -9 -8 -7 -6 =-1 DC CURRENT GAIN h FE -1k h FE - I C -5 -4 V -3 -2 I B =-1mA -400 -200 0 0 -0.2 COMMON -0.4 Ta=25 C -0.8 500 300 Ta=25 C 100 Ta=-25 C 50 30 -1 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) -0.6 -0.4 -0.2 0 -10 -20 -30 -40 COLLECTOR-EMITTER VOLTAGE V CE (V) COMMON EMITTER Ta=25 C -1000 -800 -8 -7 -6 -5 -4 -600 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1.0 -0.8 -1200 VCE(sat) - I C -3 COMMON EMITTER I C/I B =25 -1 -0.3 -0.1 Ta=25 C Ta=100 C -0.03 Ta=-25 C -0.01 -1 -3 -10 0 0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE V CE (V) 500 30 10 -10 -3 -1 -0.2 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE V BE (V) Revision No : 2 -1.0 COLLECTOR POWER DISSIPATION PC (mW) C =-2 5 Ta Ta =2 5 C C 00 Ta =1 -30 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) -300 -100 -1k 100 -1 COMMON EMITTER VCE =-1V -1k -300 COMMON EMITTER Ta=25 C VCE =-5V 300 I C - V BE -5k -100 f T - IC -2 I B =-1mA -200 -30 COLLECTOR CURRENT I C (mA) -3 -400 0 COLLECTOR CURRENT I C (mA) Ta=100 C 10 I C -V CE (LOW VOLTAGE REGION) COLLECTOR CURRENT I C (mA) 1k VCE =-1V BASE CURRENT I B (mA) 2000. 2. 28 COMMON EMITTER VCE =-1V EMITTER -0.6 TRANSITION FREQUENCY f T (MHz) BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA) STATIC CHARACTERISTICS P C - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2