AOD380A60
600V
a
MOS5TM N-Channel Power Transistor
General Description
Product Summary
VDS @ Tj,max 700V
IDM 44A
RDS(ON),max < 0.38Ω
Qg,typ 20nC
Eoss @ 400V 2.6mJ
Applications 100% UIS Tested
100% Rg Tested
Form
Tape&Reel
Symbol
VDS
VGS
VGS
IDM
IAR
EAR
EAS
TJ, TSTG
TL
Symbol
RqJA
RqCS
RqJC
TC=25°C
Power Dissipation B
Derate above 25°C
PD
W
W/°C
125
1.0
Peak diode recovery dv/dt
mJ
210
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G (TJ=25°C,
VGS=10V, IL=2Apk, L=105mH, RGS=25W)
mJ
dv/dt
20
100
V/ns
3.1
MOSFET dv/dt ruggedness
V
• Proprietary aMOS5TM technology
• Low RDS(ON)
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast reverse
recovery
• SMPS with PFC, Flyback and LLC topologies
• Silver ATX ,adapter, TV, lighting, Server power
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Package Type
Units
Junction and Storage Temperature Range
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
300
°C
°C
AOD380A60
°C/W
°C/W
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Case
Maximum Case-to-sink A
°C/W
55
0.5
1
Minimum Order Quantity
Drain-Source Voltage
V
Units
600
TO252
2500
AOD380A60
ID
A
2.5
44
Gate-Source Voltage
Pulsed Drain Current C
±20
A
TC=25°C
TC=100°C
Continuous Drain
Current
11
7.2
Gate-Source Voltage (dynamic) AC( f>1Hz)
±30
V
G
D
S
G
S
D
G
S
D
Top View
TO252
Bottom View
AOD380A60
S
D
D
G
S
D
Rev.1.2: June 2018 www.aosmd.com
Page 1 of 6
AOD380A60
Symbol Min Typ Max Units
600 - -
-700 -
BVDSS
/∆TJ
-0.44 -
V/ oC
- - 1
- - 10
IGSS - - ±100 nA
VGS(th) Gate Threshold Voltage 2.6 3.2 3.8 V
RDS(ON) -0.33 0.38 Ω
gFS -10 -S
VSD -0.85 1.2 V
IS- - 11 A
ISM - - 44 A
Ciss -955 -pF
Coss -29 -pF
Co(er) -30 -pF
Co(tr) -122 -pF
Crss -2.4 -pF
Rg-4.8 -Ω
Qg-20 -nC
Qgs -4.6 -nC
Qgd -6.6 -nC
tD(on) -20 -ns
tr-13 -ns
tD(off) -43 -ns
tf-16 -ns
trr -251 -ns
Irm -19 -A
Qrr -3.1 -mC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
mA
VDS=480V, TJ=125°C
Maximum Body-Diode Pulsed Current C
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
VDS=0V, VGS=±20V
Gate-Body leakage current
VGS=10V, VDS=480V, ID=5.5A
Total Gate Charge
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
ID=250μA, VGS=0V, TJ=150°C
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Gate resistance
f=1MHz
Static Drain-Source On-Resistance
BVDSS
Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
V
Reverse Transfer Capacitance
VDS=5V, ID=250mA
Output Capacitance
Forward Transconductance
IS=5.5A,VGS=0V
VDS=10V, ID=5.5A
VGS=10V, ID=5.5A
VGS=0V, VDS=100V, f=1MHz
Maximum Body-Diode Continuous Current
Input Capacitance
Diode Forward Voltage
DYNAMIC PARAMETERS
VGS=10V, VDS=400V, ID=5.5A,
RG=5W
Turn-On Rise Time
Turn-On DelayTime
Peak Reverse Recovery Current
IF=5.5A, dI/dt=100A/ms, VDS=400V
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
Turn-Off DelayTime
Turn-Off Fall Time
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. This is the absoluted maximum rating. Parts are 100% tested at TJ=25°C, L=60mH, IAS=1A, VDD=150V, RG=25Ω.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
Rev.1.2: June 2018 www.aosmd.com
Page 2 of 6
AOD380A60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
0.2
0.4
0.6
0.8
1
0 3 6 9 12 15
RDS(ON) (W)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS (A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
ID=5.5A
VGS=10V
0
5
10
15
20
25
0 3 6 9 12 15
ID (A)
VDS (Volts)
Figure 1: On-Region Characteristics
VGS=5V
5.5V
6.5V
10V
8V
7V
6V
0.7
0.8
0.9
1
1.1
1.2
1.3
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ (°C)
Figure 5: Break Down vs. Junction Temparature
0.1
1
10
100
2 4 6 8 10
ID (A)
VGS (Volts)
Figure 2: Transfer Characteristics
-55°C
VDS=10V
25°C
125°C
Rev.1.2: June 2018 www.aosmd.com
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AOD380A60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Package
#REF!
0
3
6
9
12
15
0 5 10 15 20 25 30
VGS (Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
1
10
100
1000
10000
0 100 200 300 400 500 600
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=480V
ID=5.5A
0
2
4
6
8
10
12
0 25 50 75 100 125 150
Current rating ID (A)
TCASE (°C)
Figure 10: Current De-rating (Note F)
0
2
4
6
8
10
0 100 200 300 400 500 600
Eoss (uJ)
VDS (Volts)
Figure 9: Coss stored Energy
Eoss
0.01
0.1
1
10
100
1000
1 10 100 1000
ID (Amps)
VDS (Volts)
Figure 11: Maximum Forward Biased Safe Operating
Area for AOD380A60 (Note F)
10ms
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100ms
Rev.1.2: June 2018 www.aosmd.com
Page 4 of 6
AOD380A60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZqJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOD380A60 (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZqJC.RqJC
RqJC=1°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PDM
Rev.1.2: June 2018 www.aosmd.com
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AOD380A60
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t tr
d(on)
ton
td(off) tf
toff
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs -
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
DSS
2
E = 1/2 LI
dI/dt
IRM
rr
Vdd
Vdd
Q = - Idt
AR
AR
trr
Rev.1.2: June 2018 www.aosmd.com
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