\ SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS T0-98 PACKAGE Device 2N4256 2N4424 2N4425 2N5172 2N5174 2N5232 2N5232A 2N5249 2N5249A 2N5305 2N5306 2N5307 2N5308 2N5309 2N5310 2N5311 2N5354 2N5355 2N5356 2N5365 2N5366 2N5418 2N5419 2N5420 2N6076 Di6G6 D29E1 D29E2 D29E4 D29E5 D29E6 D29E9 D29E10 D33D21 D33D22 033024 033025 D33D 26 D33D29 D33D30 bmn ; : BVcEO @10mA (Vv) 40 40 40 25 75 50 50 50 50 25 40 50 50 50 Nee Vce(sat) Min.-Max. @ Ic, Voge (V) |(V) Max. @ lo, Ip Toe ee 7 : 0.125 | 10mA, 1.0mA aa | 0.3 5OmA, 3mA as 0.3 50mA, 3mA | 0.25 | 10mA, 1mA : 0.95 10mA, 1.0mMA a 0.125 | 10mA, 1mA a 0.125 | 10mA, 1mA ; : 0.125 | 10mA, 1mA : : 0.125 | 10mA, 1mA . a i 1.4 }200mA, 0.2mA | 1.4 200mA, 0.2mA | 1.4 200mA, 0.2mA 1.4 200mA, 0.2mA : 0.125 | 10mA, 1mA i 0.125 10mA, 1mA IC 0.125 | 10mA, 1mA : 20 0.25 5OmA, 2.5mA : : 0.25 50mA, 2.5mA i 0.25 50mA, 2.5mA i 0.25 50mA, 2.5mA 0.25 50mA, 2.5mA ] 0.25 50mA, 2.5mA 0.25 50mA, 2.5mA | 0.25 50mA, 2.5mA : 0 0.25 10mA, 1.0mA : a 0.6 10mA, 1.0mA 0.75 |500mA, 50mA 0.75 |500mA, 50mA | 0.75 |500mA, 50mA C 0.75 |S00mA, 50mA | Bi : ' 0.75 |500mA, 50mA ' . 500mA, 50mA 0.75 |500mA, 50mA : ; 0.75 |500mA, 50mA i ) 0.75 |500mA, 50mA : 0.75 500mA, 50mA |] 0.75 |500mA, 50mA : 21 0.75 500mA, 50mA | : 0.75 |500mA, 50mA : - 0.75 |500mA, 50mA . 102 fr Cp @10V Typical (MHz) Py @ 25C (mW) 1 MHz Typical (Pf) gqaagqd NNN BeaBAEB NNNNN VN aad OprahSilicon Transistors lon 2N5418,19,20 [ 2N5447-51 SEE GES5447-51 | This series of transistors are NPN silicon, planar, epitaxial, passivated de- vices. These units feature low collector saturation voltage, good current gain linearity over a wide collector current range, high gain-bandwidth product, and low noise. These characteristics make these units excellent for use in gen- eral purpose consumer and industrial amplifier and switching applications. absol ute maximum rati ngs: (25C) (unless otherwise specified) Voltages Collector to Emitter Vero 25 Volts ws Emitter to Base Vero 4 Volts 35 4 Collector to Base Veno 25 Volts (ea eres semeeete | ET Current mera ee | | oP 288 Collector (Continuous) Ic 500 mA Wit rt Dissipation REFERENCE UNLESS TOLERANCED hi qe reane 98 a | ~ |(0502 00: Total Power (Free Air at 25C) * Pr 400 mW meres 4 Ces 3 LEADS Pp Temperature a Set G3 tn Storage Tatg 65 to +150 C ee Operating T; +125 C Lead temperature, \, + \%, from case for ten seconds maximum Ti +260 C *Derate 4.0 mW/C increase in ambient temperature above 25C. 1 | h i 1 . ors. : : electrical c aracteristics: (25 C) (unless otherwise specified) STATIC CHARACTERISTICS Min. Max. Collector Cutoff Current (Ver => 25V) Toso 100 nA (Ves = 25V, Ts = 100C) Toxo 10 pA (Vor = 25V) Icus 100 nA Emitter Cutoff Current (Ves = 5V) Tuso 10 HA Forward Current Transfer Ratio (Vex = 10V, Ic = 2 mA) 2N5418 hrs 25: (Ver = 1V, Ic = 50 mA) 2N5418 hre 40 120 (Ven 5V, Tc = 300 mA) 2N5418 hee 20 (Vee = 10V, Ic = 2 mA) 2N5419 rr 70 (Vee = 1V, Ic = 50 mA) 2N5419 her . 100 300 (Vee = 5V, Ie = 300 mA) 2N5419 her 40 (Vee = 10V, Ic == 2 mA) 2N5420 hrs 150 (Vex =1V, Ic = 50 mA) 2N5420 Derr 250 500 (Vcr = 5V, Ic = 300 mA) 2N5420 hen 15 Coliector Emitter Breakdown Voltage (Ic = 10 mA) View cro 25 Volts Collector Saturation Voltage (Ic = 50 mA, Is = 2.5 mA) Venu wan .250 Volts (Ic = 800 mA, Is = 80 mA.) Ver wap 1.0 Volts Base Saturation Voltage (Ic = 50 mA, In = 2.5 mA) Vas (SAT) 11 Volts (Ie = 800 mA, In = 30 mA) Vue war 2.0 Volts 5062N5418, 19, 20 Min. Typ. Max. Base Emitter Voltage (Vou = 10V, Ic = 2 mA) Vau 0.5 0.8 Volts DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio (Vee = 10V, Ic = 2 mA, f = 1 kHz) 2N5418 hr 25 150 (Ven = 10V, In = 2mA, f = 1 kHz) 2N5419 hee 70 400 (Ven = 10V, Ic == 2 mA, f = 1 kHz) 2N5420 hte 150 650 Output Capacitance, Common Base (Von = 10V, In = 0, f = 1 MHz) Con 4 6 pF Input Capacitance, Common Base (Ves = 0.5V, Ic = 0, f = 1 MHz) Cen 35 pF Gain Bandwidth Product (Vex = 10V, Ic = 2 mA) fr 250 MHz 507