TOSHIBA TA8157AF/AFN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8157AF, TA8157AFN STEREO HEADPHONE POWER AMPLIFIER (1.5V USE) The TA8157AF and TA8157AFN are developed for play-back stereo headphone equipments at low voltage operation (1.5V use). Those are built in bass boost function. TA8157AF FEATURES @ OCL (Output Condenser Less) Built-in ripple filter @ Output power (Vcc =1.5V, f=1kHz, THD = 10%, Ry, = 162) Py = 9mW (Typ.) SSOP24-P-300-1.00 Voltage gain : Gy=24dB (Typ.) TA8157AFN Built-in boost amplifier Built-in power switch @ Built-in muting circuit @ Low quiescent supply current (Ta = 25C) IccQ =8mA (Typ.) Excellent ripple rejection ratio : RR=55dB (Typ.) @ Low noise : Vang =25Vrms (Typ.) SSOP24-P-300-0.65A @ Operating supply voltage range (Ta =25C) Weight Vcc (opr) = 0.9~2.2V SSOP24-P-300-1.00 -: 0.32g (Typ.) SSOP24-P-300-0.65A _: 0.14g (Typ.) BLOCK DIAGRAM VREF T l ; : na in BST ADD ay a - Vcc BASE Y t eI gale nasty Mey 9 (BAGS GSE OUTATOUTCTOUTR BST } RIPPLE |] + vi FILTER ADDa J ADDg OOO OD O +A 12) L BST EQA NFA] Vege INA NB NFg TEQR [MT T Pw RF IN sw at) sw 7 swig ON 1 or L_4Ton S S Vec 1 2001-06-25TOSHIBA TA8157AF/AFN TERMINAL EXPLANATION (Terminal voltage : Typical terminal voltage at no signal with test circuit, Vcc =1.2V, Ta = 25C) TERMINAL TERMINAL FUNCTION INTERNAL CIRCUIT VOLTAGE No. NAME ) Boost amplifier on/off switch (Synchronized with equalizer x 1 BST SW __|circuit) tor] (cc! OPEN : BST Amp. on GND : BST Amp. off a 2 EQa Equalizer circuit (controlled by BST SW) Ss BST SW 9 EQp On resistance : 600, (Typ.) = 4 VREF Reference voltage 0.75 5 INA Input of power amplifier os [7 Re (This terminal is common with z 0.75 7 INB input of adder amplifier.) ~ PWA 3 NFA NF of power amplifier @ 0.75 8 NFB 3 20 | OUT, ' an 0.6 Output of power amplifier Law Varee 18 OUTB 2kQ 6 | PRE GND 0 Muting switch for power amplifier 10) MT Sw (vec : Power Amp. on i GND/OPEN_: Power Amp. off Power switch 11 PW SW (acc : Power on GND/OPEN_: Power off 2 2001-06-25TOSHIBA TA8157AF/AFN TERMINAL TERMINAL FUNCTION INTERNAL CIRCUIT VOLTAGE No.}| NAME (v) Voc xz $ J 12 RF IN Ripple filter terminal +72 b \ 1.2 Output of Ripple filter Ripple filter circuit supplies 13 | RE OUT |VREF Circuit, adder amplifier 1.13 and boost amplifier with power source. 14 COMP Phase-compensation terminal 07 for a ripple filter circuit 15 BASE Base biasing terminal of 05 transistor for ripple filter , 16 Vec 1.2 17 | PW GND 0 VREF 19 | OUT Output of center amplifier wc 0.6 24 INc Input of center amplifier 30kQ 0.75 W VREF 1.8kQ to PWa ADDa Output of adder amplifier | Input of adder amplifier is an a ADD OUT common with input of power oe VREF 0.6 amplifier. ADDR 3 2001-06-25TOSHIBA TA8157AF/AFN TERMINAL TERMINAL FUNCTION INTERNAL CIRCUIT VOLTAGE No.}| NAME (v) VREF 22 | BST IN Input of boost amplifier g 0.75 BST Output of boost amplifier eM (Controlled by boost switch) BST ON _ : BST Amp. on 23 | BST OUT (ost OFF : BST Amp. off a0 0.6 (Cut off input signal of BST oto REF Amp.) 2001-06-25TOSHIBA TA8157AF/AFN APPLICATION NOTE (1) (2) (3) (4) (5) PW SW It is necessary to connect an external pull-down resistor with terminal PW SW (Pin@), in case that this IC is turned on due to external noise etc. MT SW The leak current flows through the terminal of MT SW (Pin@), in case that this terminal is connected with Vcc line independently, even though this IC is off-mode (the terminal of PW SW (PindD) is off-mode). It is necessary to connect an external pull-down resistor with terminal MT SW, in case that this IC is turned on due to external noise etc. BST SW The leak current never flows through the terminal of BST SW (Pin@) even though this terminal is at any condition, because the ripple filter circuit supplies the BST SW circuit with power source. The terminal of BST SW should not be applied higher voltage than Vcc, to prevent IC from destruction. It is necessary to connect an external pull-up resistor with terminal BST SW, in case that this IC doesnt operate normally due to external noise etc. In case that boost amplifier is on, BST SW terminal should be appliied Vec~(Vcc - 0.3V). Input of amplifier Each input signal should be applied through a condenser. In case that DC current or DC voltage is applied to each amplifier, the internal circuit has unbalance and the each amplifier doesnt operate normally. It is advised that input signal refer to voltage of Vref, in order to reduce a pop sound. Ripple filter It is necessary to connect a transistor for ripple filter, because this IC doesnt have transistor for ripple filter. Care should be taken to stabilize the ripple filter circuit, because the ripple filter circuit supplies Vrgf circuit, adder amplifier and boost amplifier with power source. 5 2001-06-25TOSHIBA TA8157AF/AFN MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Vec 4.5 V Output Current 10 (Peak) 100 mA . . TA8157AF 400 Power Dissipation TABI57AFN Pp (Note) 500 mw Operating Temperature Topr -25~75 C Storage Temperature Tstg -55~150 (Note) Derated above Ta = 25C in the proportion of 3.2mW/C for TA8157AF, and of AmW /C for TA8157AFN. ELECTRICAL CHARACTERISTICS Unless otherwise specified : Vcc =1.2V, RL =16Q, Rg=6000, f=1kHz, Ta=25C SW71: a, SW2 : a, SW3: b, SW: a, SW5 a SWe : a, SW7 : ON, SWg : OPEN TEST CHARACTERISITC SYMBOL] CIR- TEST CONDITION MIN. | TYP. | MAX. | UNIT CUIT lect Ws of sw: b | 01 5 | uA Quiescent Supply Current |~7~-) 1 [power Amp. off, SW = b [24 [40]. Icc3 Vin =9 _ 8 11.5 Voltage Gain 1 Gy1 _ _ 22 24 26 Channel Balance CB1 2 | Vo (A) =Vo (B) = ~ 220BV 0 15 | 38 Vcc =1.5V Output Power 1 Pot THD (A) =THD (B) = 10% 5 9 o Vcc = 1.5V a 2 |THD (A) =THD(B) =10% mW % | Output Power 2 Po2 Vin (A) =Vin (B) = ~ Vin (Q) 8 | 4] 2 f=100Hz, * BTL operation = SW3 : a, SW5 : b & | Total Harmonic oO _ _ _ 0 . | Distortion THD 2 |Po(A) =Po(B) = 1mMW 0.6 1 % = | Output Noise Voltage | Vno 2 | BPF =20Hz~20kHz, SWq : b 25 40 |Vims &- | Cross Talk CT 2 |Vo= -22dBV, SW : b 35 42 . oo . Vec = 1.0V, fp = 100Hz Ripple Rejection Ratio | RR1 2 V;= -32dBV, SWy : OPEN 45 55 _ dB Muting Attenuation ATT1 2 |Vo= 22dBV, SW : amb 73 6 2001-06-25TOSHIBA TA8157AF/AFN TEST CHARACTERISTIC SYMBOL] CIR- TEST CONDITION MIN. | TYP. | MAX. | UNIT CUIT ADD Amp. Voltage Vin (A) = Vin (B) RL= 12k Gain Gy2 2 |Vo (ADD) = - 22dBV 15 | 17.5} 20 | dB SW3 : a/b ADD Amp. . Vin (A) =Vin (B) Ry = 12k0, Bass Voltage Output | Vom2 2 THD (ADD) = 1%, SW3 : a/b 80 130 mVrms oost Function BST Amp. Voltage G 2 Vo = 37dBV, RL= 16kQ 14 165 19 dB Stage Gain V3 SW6 :b , BST Amp. THD (BST) =3%, Ry = 16kQ Maximum Output |Vom3 | 2 | ow ( 3%, RL= 16 55 | 90} |mVrms Voltage 6 BST Amp. Vo = 32dBV, SW3 : a>b Attenuation ATT3 2 SW6 : b 7 73) | 9B Ripple Filter Output Voltage |VrFoyT| 2 |Vcc=1V, IRF=20mA 0.9 0.93; Vv Vec=1V, IRF=20mMA Ripple Rejection Ratio RR4 2 |fp=100Hz, Vy = -37dBV 35 43); dB SW7 : OPEN . . lEQ = 1004A, SW3 : a Equalizer On Resistance RON 1 SWe : ON = 60}; Oo Vcc =0.9V, V4=0.5V Power On Current 144 1 SW7 : , SW: b 5 pA Switch Vcc =0.9V, V4S0.2V _ Off Voltage Vi 1 Iowa sd, $Wo : b 0 03 | v Vcc =0.9V, Icc= 4.5mA Off Current | 1 5 A Mute ue 10 SW? : M Switch Vcc =0.9V, IecS3.5mA _ On Voltage Vio 1 SW: d 0 0.3 Vv Vcc =90.9V, leg = 100A ff | 1 A Boost [on current 1 V2=0.7V, SW3 : , SWg: ON | > M Switch Vcc =0.9V, leg = 100uA _ On Voltage V1 1 V7 =0.2V, SW3 : d, SWg : ON 0.6 0.9 Vv 2001-06-25TOSHIBA TA8157AF/AFN TEST CIRCUIT 1 SW: / (d) NY m () o a? BST SW Inc G4) C2) Qa BST OUT @3) G) NEA BST IN @2) (4) Vree AbD out @i) O1pF 8.20, w|, G) Ina OUTA O4yt oe ae Ge |! 2s sw a (6) PRE GND OUTe G94} 4 a as (*) 1 pF 3 @) Ine outs G+ 4 n+ 0.1 4F (8) NFB pw GND (17 > WS rd ~s +) ost (a), -@) 03 vec GO Vcc sWa2 {b) 0 25A1362-Y 10) MT sw BASE (13-_ (d) sw (b) (a) ' 17) PW sw comp (14)AHK4 0 (c) 100pF (d) 12) RF IN RF OUT (3-# Hw s+ +15 ef! TF a (*) Tantalum condenser 8 2001-06-25TOSHIBA TA8157AF/AFN TEST CIRCUIT 2 SW3 Nad Rg = 6000 IHF () EO Vec po BST SW INC @)t~ | ) (a) r 6002 0.47 uF SW @) Qa BST OUT 634+} S 8 1p (b) O44 in| G) NFA BST IN Qrr~ | We 6002 1 uF t#_) Vrer ADD OUT 6) S 6002 (b) Lak otek 920 g e+ 4 G) INA OUTA Oe swaa () Ss Rg = 6000. fo PRE GND oute (--*#= 47, SWap al (*) 1 uF (a) 63 | wwo (7) Ing OUTR 43+ 24 6000, (b) Tae 0.1 uF (8) NFg PW GND (13 ay fr = 100Hz @) eae vec | *oO Vcc L_ L 8 SW7 + sW2 ee) MT SW BASE G3-__X 25A1362-Y I vec r b (b) swy ~e(11) Pw sw comp (14-1t4 47 [tF 12) RF IN RF OUT (3) UT + 4.7 uF 3}8 10 (*) Tantalum condenser 9 2001-06-25TOSHIBA CHARACTERISTIC CURVES Unless otherwise specified TOTAL HARMONIC DISTORTION THD (%) QUIESCENT SUPPLY CURRENT icc (mA) OUTPUT POWER Po (mw) Icc - Vee 12 7 3 - lec3 oT * lcc2 . ee ol 0 1 15 2 25 SUPPLY VOLTAGE Vcc (V) THD - Po} f= 100Hz f=1, 10kHz 0.5 1 2 5 10 20 OUTPUT POWER Po, (mW) Po - Vec 30 THD (A) = THD (B) = 10% 20 Po2 (BTL) ae Lae a 10 Ss een Yr Pot 7 0 Le o 1 15 2 25 SUPPLY VOLTAGE Vcc (V) TOTAL HARMONIC DISTORTION THD (%) OUTPUT DC VOLTAGE Vo (V) RIPPLE REJECTION RATIO RR (dB) TA8157AF/AFN : Vec = 1.2V, RL= 160, Rg= 6000, f= 1kHz, Ta =25C Vo - Vcc Vo 1 15 2 2.5 SUPPLY VOLTAGE Vec (V) THD - Po2 f=100Hz 0.5 1 2 5 10 20 OUTPUT POWER Po2 (mW) RR - Vcc PW : fr=100Hz, Vr= -32dBV RF : fp=100Hz, V-= -37d0BV, Ipp=20MA 4 1 1 AS 1 15 2 2.5 SUPPLY VOLTAGE VCC (V) 10 2001-06-25TOSHIBA TA8157AF/AFN Gy - f cT - f Vo (A) = Vo (B)= 22dBV a = z= ao > 3 e 5 2 a 8 5 2 Oo WW > 1 30 100 300 1k 3k 10k 30k 30 100 =. 300 1k 3k 10k 30k FREQUENCY f (Hz) FREQUENCY f (Hz) Vom2 - Vcc Vom3 - Vcc 150 150 ae) rt a Oe E a= 177 cS of of > > EN ? Eom = & 100 a 100 E > a ke > 2 f D> | aearnr += oO /| = = D> a] 4 = = / ba g 50 = 50 a Vin (A) = Vin (B) a S < THD (ADD) = 1% <t a - THD (BST) =3% 3 R= 12kQ e RL = 16kQ OL, OLe pod ae 0 1 1.5 2 25 0 1 1.5 2 2.5 SUPPLY VOLTAGE Vcc (V) SUPPLY VOLTAGE Vcc (V) VRF OUT - IRF lec - Ta Vec=1.5V (v) Ice (mA) Vec=1.2V VRF QUT Vec=1V RIPPLE FILTER OUTPUT VOLTAGE QUIESCENT SUPPLY CURRENT 0 20 40 60 80 -20 0 20 40 60 80 RIPPLE FILTER OUTPUT CURRENT Ipp (mA) AMBIENT TEMPERATURE Ta (C) 11 2001-06-25TOSHIBA Vo - Ta v) 1 VRE OUT VREF Vo() OUTPUT DC VOLTAGE Vo -20 0 20 40 60 AMBIENT TEMPERATURE Ta (C) Gy - Ta ADD AMP. BST AMP. VOLTAGE GAIN Gy (dB) -20 0 20 40 60 AMBIENT TEMPERATURE Ta (C) Vom3 - Ta THD (BST) = 3% RL = 16kQ. Vom3 (Vrms) BST AMP, MAXIMUM OUTPUT VOLTAGE - 20 0 20 40 60 AMBIENT TEMPERATURE Ta (C) 80 80 80 ADD AMP. MAXIMUM OUTPUT VOLTAGE OUTPUT POWER Py9 (mW) Vom2 (Vrms) TA8157AF/AFN Pg - Ta Po? (BTL) Vcc =1.5V THD (A) = THD (B) = 10% -20 0 20 40 60 80 AMBIENT TEMPERATURE Ta_ (C) Vom2 - Ta Vin (A) = Vin(B) THD (ADD) = 1% RL = 12kQ, -20 0 20 40 60 80 AMBIENT TEMPERATURE Ta (C) 12 2001-06-25TOSHIBA TA8157AF/AFN PACKAGE DIMENSIONS $SOP24-P-300- 1.00 Unit : mm 24 13 HHHHHHHAHAAE A ai 7 6.0+0.2 7940.3 (300mil) O HE re a 1.0TYP | |. _ I 0.440.1 [510.20 id. i" 13.5MAX 13.0+0.2 0.157845 0.52540.2 0.17345 It 840.2 Weight : 0.32g (Typ.) 13 2001-06-25TOSHIBA TA8157AF/AFN PACKAGE DIMENSIONS SSOP24-P-300-0.65A Unit : mm 24 13 - ARARARRARRRA J ay o| oO +) wl] iol on O 1 ! HaBRBEREGHG t 1 12 0.325T YP |, 0-2240.1 [0.130 0.65 we B.3MAX 7,840.2 NI x wm o <x <2 _ WOT E TTT =4 et bald SRC as Oo uw ror o | | 0.45+0.2 So Weight : 0.14g (Typ.) 14 2001-06-25TOSHIBA TA8157AF/AFN RESTRICTIONS ON PRODUCT USE 000707EBA @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 15 2001-06-25