50 MITSUBISHI RECTIFIER DIODE STACK ASSEMBLY DSSBN LOW POWER RECTIFIER USE DESCRIPTION Mitsubishi type DS5BN series are low power rectifier diode stack assemblies using high reliability rectifier diode. These stack assemblies are constructed in single-phase full-wave bridge configuration and are used by the natural convection. The rated DC cotput current is 5 Amperes (Ta=40C), and recommended AC input voltage are 50 Volts and 110 Volts. FEATURES @ Mitsubishi high reliability rectifier diodes are used in these stack assem- blies. @ Compact size and light weight. Single-phase full-wave bridge configuration. APPLICATIONS DC power sources for control panel, low power DC motors, battery chargers, etc. ABSOLUTE MAXIMUM RATINGS OUTLINE DRAWING [eo Dimension : mm wo rm n =o - oro w 1.3 @_ _ + ~ @ Voltage class . Symbol Parameter Unit L M VRRM Repetitive peak reverse voltage 100 300 Vv Vasm Non-repetitive peak reverse voltage 150 400 Vv Vra(oc) | DC reverse voltage 80 240 Vv Ea Recommended AC input voltage 50 110 Vv Symbol Parameter Condition Limit Unit . Without fin 3.2 A Id DC ouitput current Ta=40 C, Natural convection With fin 5980xt1.5 A2 5.0 A lesm Surge (non-repetitive) forward current:| Half cycle, GOHz peak value 200 A : Value corresponding to T cycle of half-wave 2 2: "vt 1? t for fusing. 60Hz, Surge forward current 170 As Tj Operating junction temperature 30~ +160 C Ta Operating ambient temperature ~+~30~ +130 * - Dielectric strength 1 minute 1500 Vv - Insulation resistance 10 MQ ~ Mounting torquek Recommended value 10 11 kg-cm _ Weight Typical value 7.5 g ELECTRICAL CHARACTERISTICS Symbol Parameter Test condition Max. value Unit iRAM Peak reverse current Tj= 160C. Varw applied 1.5 mA VFM Forward voitage drop Ta=25C.. lpm =10A. instantaneous value 1.4 Vv . . Without fin: 83.5 . Rth(j-a) | Thermal resistance Junction to ambient: - - c/w With fin 980xt1.5 A2 50 :Instantaneous forward current (A) Average power dissipation (W) Allowable DC output current (%) _ o Maximum forward characteristics (Per one diode) 16 06 08 10 12 1.4 18 2.0 22 Instantaneous forward voltage drop (V) Maximum average power dissipation characteristics (Per one diode) 4.0 3.5 inductive loads 3.0 2.5 2.0 15 19 0.5 0 1. : 5 40 Average forward current (A) Over current ratings 600 ; S ~ sso a J 85 t 500 O8 mill time 450 r=20 7 Duty To 400 \a a!) + factor= 7% 100( 7) LA! 350 r=2 300 Vk r=4 250 r=10 150 Ma SS ~~. 100, 270. 40.+~~602=80SS00 Duty factor (%) MITSUBISHI RECTIFIER DIODE STACK ASSEMBLY Surge (non-repetitive) forward current {A) Ambient temperature (C) DSSBN LOW POWER RECTIFIER USE Rated surge forward current (Per one diode) 200 180 160 140 120 100 60 40 20 1 Cycles at GOHz (60Hz (LSU SH 4 DIV) Allowable ambient temperature vs. DC output current 160 WSs ae== Capacitive loads 140 inductive loads 120 n 100 080Xt1. 80 Ag plate 60 40 20 115 2 25 3 5 4 DC output current (A) 51