IXFP4N100Q - IXYS - Datasheet.Live

1 - 4

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 1000 V

VDGR TJ= 25°C to 150°C; RGS = 1 MW1000 V

VGS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C4A

IDM TC= 25 °C, pulse width limited by TJM 16 A

IAR TC= 25 °C4A

EAR TC= 25°C 20mJ

EAS 700 mJ

dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns

TJ £ 150°C, RG = 2 W

PDTC= 25°C 150 W

TJ-55 to +150 °C

TJM 150 °C

Tstg -55 to +150 °C

TL1.6 mm (0.063 in) from case for 10 s 300 °C

MdMounting torque (TO-220) 1.13/10 Nm/lb.in.

Weight TO-220 4 g

TO-263 2 g

N-Channel Enhancement Mode

Avalanche Rated, Low Qg, High dv/dt

Features

• IXYS advanced low Qg process

• Low gate charge and capacitances

- easier to drive

- faster switching

• International standard packages

• Low RDS (on)

• Rated for unclamped Inductive load

Switching (UIS)

• Molding epoxies meet UL 94 V-0

flammability classification

Advantages

• Easy to mount

• Space savings

• High power density

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VDSS VGS = 0 V, ID = 1 mA 1000 V

VGS(th) VDS = VGS, ID = 1.5 mA 3.0 5.0 V

IGSS VGS = ±20 VDC, VDS = 0 ±100 nA

IDSS VDS = VDSS TJ = 25°C50mA

VGS = 0 V TJ = 125°C1mA

RDS(on) VGS = 10 V, ID = 0.5 ID25 3.0 W

Pulse test, t £ 300 ms, duty cycle d £ 2 %

HiPerFETTM

Power MOSFETs

Q-Class

VDSS =1000 V

ID25 =4A

RDS(on) = 3.0 W

trr £ 250 ns

Preliminary Data Sheet

GS

TO-263 (IXFA)

GDS

TO-220 (IXFP)

G = Gate D = Drain

S = Source TAB = Drain

IXFA 4N100Q

IXFP 4N100Q

D (TAB)

98705 (02/04/00)IXYS reserves the right to change limits, test conditions, and dimensions.

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Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 1 .5 2 .5 S

Ciss 1050 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1 20 p F

Crss 30 pF

td(on) 17 ns

trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 15 ns

td(off) RG = 4.7 W (External), 3 2 ns

tf18 ns

Qg(on) 39 nC

Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 9nC

Qgd 22 nC

RthJC 0.8 K/W

RthCK (TO-220) 0.25 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

ISVGS = 0 V 4 A

ISM Repetitive; pulse width limited by TJM 16 A

VSD IF = IS, VGS = 0 V, 1 .5 V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

trr 250 ns

QRM IF = IS, -di/dt = 100 A/ms, VR = 100 V 0.52 mC

IRM 1.8 A

TO-263 AA (IXFA) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

A1 2.03 2.79 .080 .110

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.46 0.74 .018 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 7.11 8.13 .280 .320

E 9.65 10.29 .380 .405

E1 6.86 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.38 0 .015

R 0.46 0.74 .018 .029

TO-220 AB (IXFP) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 12.70 13.97 0.500 0.550

B 14.73 16.00 0.580 0.630

C 9.91 10.66 0.390 0.420

D 3.54 4.08 0.139 0.161

E 5.85 6.85 0.230 0.270

F 2.54 3.18 0.100 0.125

G 1.15 1.65 0.045 0.065

H 2.79 5.84 0.110 0.230

J 0.64 1.01 0.025 0.040

K 2.54 BSC 0.100 BSC

M 4.32 4.82 0.170 0.190

N 1.14 1.39 0.045 0.055

Q 0.35 0.56 0.014 0.022

R 2.29 2.79 0.090 0.110

IXFA 4N100Q

IXFP 4N100Q

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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IXFA 4N100Q

IXFP 4N100Q

VDS - Volts

0246810

I

D

- Amperes

0

1

2

3

4

VDS - Volts

0 5 10 15 20

I

D

- Amperes

0

1

2

3

4

TJ - Degrees C

25 50 75 100 125 150

R

DS(ON)

- Normalized

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

VGS - Volts

345678

I

D

- Amperes

0

1

2

3

4

ID - Amperes

0123456

R

DS(ON)

- Normalized

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

VCE - Volts

0 4 8 12 16 20

I

D

- Amperes

0

1

2

3

4

5

6

7V

6V

VGS = 10V

9V

8V

TJ = 25°CVGS = 10V

9V

8V

TJ = 25°C

TJ = 125°C

5V 5V

TJ = 25°C

TJ = 125°C

6V

7V

5V

6V

7V

VGS = 10V

9V

8V

TJ = 12 5OC

VGS = 10V

ID = 2A

TJ = 25OC

Figure 1. Output Characteristics at 25OC Figure 2. Extended Output Characteristics at 125OC

Figure 3. Output characteristics at 125°C

Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ

Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID

Figure 4. Admittance Curves

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4 - 4

IXFA 4N100Q

IXFP 4N100Q

TC - Degrees Centigrade

-50 -25 0 25 50 75 100 125 150

I

D

- Amperes

0

1

2

3

4

5

Pulse Wi dth - Seconds

10-4 10-3 10-2 10-1 100101

R(th)

JC

- K/ W

0.01

0.10

1.00

VDS - Volts

0 5 10 15 20 25 30 35

Capacitanc e - pF

10

100

1000

VSD - Vo lts

0.2 0.4 0.6 0.8 1.0 1.2

I

D

- Amperes

0

2

4

6

8

10

Ga te Char g e - nC

0 102030405060

V

GS

- Volts

0

3

6

9

12

15

Crss

Coss

Ciss

VDS = 600 V

ID = 3 A

IG = 10 mA f = 1 MHz

TJ = 125OC

TJ = 25OC

60

2000

Figure 7. Gate Charge Figure 8. Capacitance Curves

Figure 9. Forward Voltage Drop of the Intrinsic Diode Figure10. Drain Current vs. Case Temperature

Figure 11. Transient Thermal Resistance

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