Transistor Absolute Maximum Ratings: Collector-Base Voltage, Vcbo : 120V Collector-Emitter Voltage, Vceo : 65V Emitter-Base Voltage, Vebo : 7V Continuous Collector Current, Ic : 1A Total Device Dissipation (Ta = +25C), Pd : 800mW Derate above 25C : 4.6mW/C Total Device Dissipation (Tc = + 25C), Pd : 5W Derate above 25C : 28.6mW/C Operating Junction Temperature Range, Tj : -65C to +200C Description: This is a Silicon NPN transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage low leakage current, low capacity, and beta useful over an extremely wide current range. Storage Temperature Range, Tstg : -65C to 200C Thermal Resistance, Junction-to-Case, Rthjc : 35C/W Thermal Resistance, Junction-to-Ambient, Rthja : 175C/W Lead Temperature (During Soldering, 1/16" : 300C from case, 60sec max), Tl Electrical Characteristics: (Ta = +25C Unless otherwise specified) Parameter Symbol Test Conditions Min Max Unit Collector-Emitter Breakdown Voltage V(br)ceo Ic = 100mA, Ib = 0 65 - Collector-Base Breakdown Voltage V(br)cbo Ic = 100A, Ie = 0 120 - Emitter-Base Breakdown Voltage V(br)ebo Ie = 100A, Ic = 0 7 - Vcb = 60V, Ie = 0 - 0.002 Vcb = 60V, Ie = 0, Ta = +150C - 2 Vbe = 5V, Ic = 0 - 0.002 Vce = 10V, Ic = 0.1mA 20 - - Vce = 10V, Ic = 10mA 35 - - Vce = 10V, Ic = 150mA 40 120 - Vce = 10V, Ic = 10mA, Ta = -55C 20 - - Vce = 10V, Ic = 500mA 25 - - Vce = 10V, Ic = 1A 10 - - OFF Characteristics Collector-Cut-Off Current Icbo Emitter Cut-Off Current Iebo V A On Characteristics (Note 1) DC Current Gain hfe www.element14.com www.farnell.com www.newark.com Page <1> 07/09/12 V1.0 Transistor On Characteristics (Note 1) Collector-Emitter Saturation Voltage Vce(sat) Ic = 150mA, Ib = 15mA - 0.5 Base-Emitter Saturation Voltage Vbe(sat) Ic = 150mA, Ib = 15mA - 1.1 V Small-Signal Characteristics Current Gain-Bandwidth Product 60 - Output Capacitance Cobo ft Vce = 10V, Ic = 50mA, f = 20MHz Vcb = 10V, Ie = 0, f = 1MHz - 15 MHz Input Capacitance Cibo Vbe = 500mV, Ic = 0, f = 1MHz - 80 Small-Signal Current Gain hfe Vce = 5V, Ic = 1mA, f = 1kHz 30 100 - Noise Figure NF Vce = 10V, Ic = 100 A, f = kHz, Rs = 1k - 6 dB pF Note 1. Pulse Test: Pulse Width < = 300s, Duty Cycle < = 1% Dimensions A B C D E F G H J K L Min. 8.50 7.74 6.09 0.40 - 2.41 4.82 0.71 0.73 12.70 42 Max. 9.39 8.50 6.60 0.53 0.88 2.66 5.33 0.86 1.02 - 48 Dimensions : Millimetres Part Number Table Description Part Number Transistor 2N2102 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <2> 07/09/12 V1.0