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Transistor
Description:
This is a Silicon NPN transistor in a TO-39
type case designed primarily for amplier and
switching applications. This device features high
breakdown voltage low leakage current, low
capacity, and beta useful over an extremely wide
current range.
Collector-Base Voltage, Vcbo : 120V
Collector-Emitter Voltage, Vceo : 65V
Emitter-Base Voltage, Vebo : 7V
Continuous Collector Current, Ic: 1A
Total Device Dissipation
(Ta = +25ºC), Pd: 800mW
Derate above 25ºC : 4.6mW/ºC
Total Device Dissipation
(Tc = + 25ºC), Pd: 5W
Derate above 25ºC : 28.6mW/ºC
Operating Junction Temperature Range, Tj: -65ºC to +200ºC
Storage Temperature Range, Tstg : -65ºC to 200ºC
Thermal Resistance,
Junction-to-Case, Rthjc : 35ºC/W
Thermal Resistance,
Junction-to-Ambient, Rthja : 175ºC/W
Lead Temperature (During Soldering, 1/16"
from case, 60sec max), Tl: 300ºC
Absolute Maximum Ratings:
OFF Characteristics
Collector-Emitter Breakdown Voltage V(br)ceo Ic = 100mA, Ib = 0 65 -
V
Collector-Base Breakdown Voltage V(br)cbo Ic = 100µA, Ie = 0 120 -
Emitter-Base Breakdown Voltage V(br)ebo Ie = 100µA, Ic = 0 7 -
Collector-Cut-Off Current Icbo
Vcb = 60V, Ie = 0 - 0.002
µA
Vcb = 60V, Ie = 0, Ta = +150ºC - 2
Emitter Cut-Off Current Iebo Vbe = 5V, Ic = 0 - 0.002
Electrical Characteristics: (Ta = +25ºC Unless otherwise specied)
Parameter Symbol Test Conditions Min Max Unit
On Characteristics (Note 1)
DC Current Gain hfe
Vce = 10V, Ic = 0.1mA 20 - -
Vce = 10V, Ic = 10mA 35 - -
Vce = 10V, Ic = 150mA 40 120 -
Vce = 10V, Ic = 10mA, Ta = -55ºC 20 - -
Vce = 10V, Ic = 500mA 25 - -
Vce = 10V, Ic = 1A 10 - -
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Page <2> V1.007/09/12
Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Small-Signal Characteristics
Current Gain-Bandwidth Product ftVce = 10V, Ic = 50mA, f = 20MHz 60 - MHz
Output Capacitance Cobo Vcb = 10V, Ie = 0, f = 1MHz - 15
pF
Input Capacitance Cibo Vbe = 500mV, Ic = 0, f = 1MHz - 80
Small-Signal Current Gain hfe Vce = 5V, Ic = 1mA, f = 1kHz 30 100 -
Noise Figure NF Vce = 10V, Ic = 100 µA, f = kHz, Rs = 1kΩ - 6 dB
Note 1. Pulse Test: Pulse Width <
=
300s, Duty Cycle <
=
1%
On Characteristics (Note 1)
Collector-Emitter Saturation Voltage Vce(sat) Ic = 150mA, Ib = 15mA - 0.5 V
Base-Emitter Saturation Voltage Vbe(sat) Ic = 150mA, Ib = 15mA - 1.1
Part Number Table
Description Part Number
Transistor 2N2102
Dimensions A B C D E F G H J K L
Min. 8.50 7.74 6.09 0.40 - 2.41 4.82 0.71 0.73 12.70 42º
Max. 9.39 8.50 6.60 0.53 0.88 2.66 5.33 0.86 1.02 - 48º
Dimensions : Millimetres
