FEDL8511-05
Issue Date: March 08, 2013
ML8511
UV Sensor with Vo ltage Output
GENERAL DISCRIPTION
The ML8511 is a UV sensor, which is suitable for acquiring UV intensity indoors or outdoors. The ML8511 is
equipped with an internal amplifier, which converts photo-current to voltage depending on the UV intensity.
This unique feature offers an easy interface to external circuits such as ADC. In the power down mode, typical
standby current is 0.1A, thus enabling a longer battery life.
FEATURES
• Photodiode sensitive to UV-A and UV-B
• Embedded operational amplifier
• Analog vo l tage o utp ut
• Low supply current (300A typ.) and low standby current (0.1A typ.)
• Small and thin surface mount package (4.0mm x 3.7mm x 0.73mm, 12-pin ceramic QFN)
APPLICATIONS
• Smart phone, Watch, Weather station,Bicycle navigation, Accessary, Gaming
BLOCK DAIAGRAM
TP EN
VDD
9
PIN CONFIGURATIONS
Pin Symbol I/O Function
7 VDD PW
Supply voltage. Decouple this pin to ground with 0.1 F capacitor.
5 GND PW Ground
4 EN I Active high enable pin. (High: Active mode, Low: Standby mode)
8 OUT O Output (Low in power down or standby mode)
9 TP I/O Test pin. Do not connect.
10 TR I/O Internal reference voltage. Decouple this pin to ground with 1 nF
capacitor.
1,2,3, 6,11,12 NC - No Connection. Do not connect.
7
OUT
UV Photo-
diode
Amplifier
GND
ML8511
TR
4
8
5 10
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ML8511
EXAMPLE OF CONNCTING DIAGRAM
0.1uF
PORT
V
DD
GND
OUT
EN
1nF
TR
10
5
7
ADC
ML8511
8
4
* Load resistance of OUT port is recommended more than 100 k.
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ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Condition Rating unit
Supply Voltage VDD Ta=25 C -0.3 to +4.6 V
Input Voltage VI Ta=25 C -0.3 to +4.6 V
Output Short Current IOS Ta=25 C 5 mA
Powe r Dissipation PD Ta=25 C 30 mW
Storage Temperature Tstg - -30 to +85
C
RECOMENTED OPERATION CONDITIONS
Parameter Symbol Min. Typ. Max. unit
Operating Voltage VDD 2.7 3.3 3.6 V
Operating Temperature Ta -20 - 70 C
ELECTRO-OPTICAL CHARACTERISTICS
(VDD=+2.7V to +3.6V, Ta= -20C to +70 C)
Parameter Symbol Condition Min. Typ. Max. unit
Supply Current (active mode) IDDA V
EN=VDD - 300 500 A
Supply Current (standby mode) IDDS V
EN=0 - 0.1 1 A
Input Voltage (High level) VIH - VDD × 0.8 - VDD + 0.3 V
Input Voltage (Low level) VIL - -0.2 - 0.72 V
High level input current IIH V
EN=VDD - - 1 A
Low level input current IIL V
EN=0 -1 - - A
Wavelength of maximum sensitivity p Ta=25C - 365 - nm
Output Setup Time TSU V
EN=VDD - - 1 ms
Output Voltage (Shading) * VREF Ta=25C,
VEN=VDD 0.95 1.0 1.05 V
Output Voltage (10mW/cm2 at p) * VO Ta=25C,
VEN=VDD 2.08 2.2 2.32 V
* Load resistance of OUT port is recommended more than 100 k.
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OUTPUT VALTAGE– UV INTENSITY CHARCTERISTICS
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0369121
UV Intensity (mW/cm
2
) @ λ365nm
Output Voltage (V)
5
75 ℃
25 ℃
-5 ℃
-25 ℃
SPECTRAL RESPONSIVILITY CHARACTERISTICS
0.0
0.2
0.4
0.6
0.8
1.0
280 320 360 400 440 480 520 560
Wavelength (nm)
Relative Responsivity
VDD=3.0V
Ta=25°C, VDD=3.0V
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TIMING CHART
Supply voltage and EN signal state should take one of the following procedures:
1. EN should be HIGH or LOW at the same time when VDD is app lied.
2. EN should be HIGH or LOW while VDD is applied.
Output should be read after output voltage level becomes stable. Maximum time required until stable output
voltage reaches is 1 millisecond after EN goes HIGH.
TSU
V
DD
EN
OUT
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PACKAGE DIMENTIONS
(Unit: mm)
Notes for Mounting the Surface Mount Type Package
The surface mount type packages are very susceptible to heat in reflow mounting and humidity absorbed in
storage. Therefore, before you perform reflow mounting, contact our responsible sales person for the product
name, package name, pin number, package code and desired mounting conditions (reflow method, temperature
and times).
Specifications are defined without considering the UV absorption by an external cover material.
Please contact our sales representativeus when the cover material is applied.
Do not press or rub the surface of the resin covering the top of the package where, which is on the UV-ray is
light received.
In addition, do not apply pressure at high temperature.
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REVISON HISTORY
Page
Document No. Date Previous
Edition Current
Edition Description
FEDL851100FC-01 Sep. 3, 2008 - Preliminary edition
FEDL8511-02 Jan. 24, 2008 - 1 Added disclaimer
- - Changed Logo OKI to OKI SEMICONDUCTOR
1 5
The following ite ms has bee n mov ed:
PACKAGE, NOTICE, PRECAUTION and
DISCLAIMER.
2 1
The following items have been moved:
BLOCK DIAGRAM and PIN CONFIGRATION
3 2
The following tabl es has bee n partia lly modif ied:
RECOMMENDED OPERATING CONDITIONS
ELECTRO-OPTICAL CHARACTERISTICS
3 2
Changed load resistance 500 k to 100 k
- 3 Added graphs
FEDL8511-03 Nov. 7, 2008
- 4 Added “TIMING CHART”
1 1
Feature description is removed. Applications
section is added.
4 4 Explanation is provided to the timing chart.
FJDL8511-0 4 Jan. 17, 2013
5 5
Package drawing is updated.
Descriptions in the NOTE are modified.
DISCLIMER is removed.
1 1 Descriptions in Pin conf igurations are modi fied.
FJDL8511-05 Mar. 8, 2013 - 2 Example of connecting diagram is added.
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NOTES
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