MBR1030–MBR1060
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 1 (4)
10A Schottky Barrier Rectifiers
Features
D
Schottky barrier chip
D
Guard ring die constuction for transient
protection
D
Low power loss, high efficiency
D
High current capability and low forward voltage
drop
D
High surge capability
D
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection
application
D
Plastic material – UL Recognition flammability
classification 94V–0
94 9537
Absolute Maximum Ratings
Tj = 25
_
CParameter Test
Conditions Type Symbol Value Unit
Repetitive peak reverse voltage MBR1030 VRRM 30 V
g
=Working peak reverse voltage
DC Bl ki lt
MBR1035
RRM
=VRWM
V
35 V
=DC Blocking voltage MBR1040 =VR40 V
MBR1045 45 V
MBR1050 50 V
MBR1060 60 V
Peak forward surge current IFSM 150 A
Average forward current TC=125
°
C IFAV 10 A
Junction and storage temperature range Tj=Tstg –65...+150
°
C
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=20A, TC=25
°
C MBR1030–MBR1045 VF0.84 V
g
IF=10A, TC=125
°
C VF0.57 V
IF=20A, TC=25
°
C MBR1050–MBR1060 VF0.95 V
IF=10A, TC=125
°
C VF0.70 V
Reverse current TC=25
°
C MBR1030–MBR1045 IR0.1 mA
TC=125
°
C IR15 mA
TC=25
°
C MBR1050–MBR1060 IR0.1 mA
TC=125
°
C IR25 mA
Diode capacitance VR=4V, f=1MHz CD400 pF
Thermal resistance
junction to case TL=const. RthJC 2.5 K/W
Voltage rate of change
( Rated VR ) dV/dt 1000 V/
m
s
MBR1030–MBR1060
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-982 (4)
Characteristics (Tj = 25
_
C unless otherwise specified)
0
2
4
6
8
10
0 50 100 150
15332 Tamb – Ambient Temperature ( °C )
I – Average Forward Current ( A )
FAV
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
0.1
1.0
10
50
0.2 0.4 0.6 0.8 1.0
15333
I – Forward Current ( A )
F
VF – Forward Voltage ( V )
IF Pulse Width = 300 µs
Tj = 25°C
2% Duty Cycle
MBR1030 – MBR1045
MBR1050 – MBR1060
Figure 2. Typ. Forward Current vs. Forward Voltage
0
50
100
150
200
250
300
110 100
I – Peak Forward Surge Current ( A )
FSM
Number of Cycles at 60 Hz
15334
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
100
1000
0.1 1.0 10 100
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
15335
Tj = 25°C
f = 1 MHz
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
0.001
0.01
0.1
1.0
10
020 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
I – Reverse Current ( mA )
R
15336
Tj = 75°C
Tj = 25°C
Tj = 125°C
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
MBR1030–MBR1060
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 3 (4)
Dimensions in mm
14469
Case: molded plastic
Polarity: see diagram
Approx. weight: 2.24 grams
Mounting position: any
Marking: type number
MBR1030–MBR1060
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-984 (4)
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
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of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
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Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
