N-Channel JFET Monolithic Dual U440/U441 FEATURES @ High Gain 2.0... cc eee cece eee eens dts > 6 mS e@ Low Leakage ..................5.-- Ig < 1pA typical @ Low Noise APPLICATIONS e Differential Wideband Amplifiers @ VHF/UHF Amplifiers e Test and Measurement e Multl-Chip/Hybrids CORPORATION a DESCRIPTION The U440 Series is an N-Channel Monolithic Dual JFET designed for high speed amplifier circuits. Featuring high gain (> 6 mS typical), low leakage (< 1pA typ) and low noise. This series is an excellent choice for differential amplifier designs. ORDERING INFORMATION Part Package Temparature Range -55C to +150C U440-1 Hermetic TO-71 Package -55C to +150C XU440-1 Sorted Chips in Carriers PIN CONFIGURATION To-71 Cu SOURCE 1 DRAIN 1 GATE 1 SOURCE 2 DRAIN 2 GATE 2 anon BOTTOM VIEWABSOLUTE MAXIMUM RATINGS (Ta = 25C unless otherwise noted) U440 /U441 Parameter/Test Condition Symbol Limit Unit Gate-Drain Voltage Vep -25 Gate-Source Voltage Ves -25 Gate-Gate Voltage Vac 250 Forward Gate Current Io 50 mA Power Dissipation (per side) Pp 250 mw (total) 350 mW Power Derating (per side) 2 mW/ C (total) 2.8 mW/ C Operating Junction Temperature Ty -55 to 150 C Storage Temperature Tsig -65 to 200 % Lead Temperature (1/16" from case for 10 seconds) Tt 300 C ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) | uaao 441 SYMBOL CHARACTERISTCS TYP UNIT TEST CONDITIONS MIN | MAX | MIN | MAX STATIC Vierjass Gate-Source Breakdown Voltage -35 | -25 -25 V Iq =-1mA, Vps = OV Vas(orF) Gate-Source Cut off Voltage 35] -1 6 A -6 Vos = 10V, lo = 1nA ipss Saturation Drain Current 15 6 30 6 30 mA Vos = 10V, Vas = OV -1 -500 -500 A Ves =-15V, Vos = OV lass Gate Reverse Current p os oS 2 nA | Ta=150C | -1 -500 -600 A Vp = 10V, lo = 5mA Io Gate Operating Current p re oem 03 na | Ta=125C | VesiF) Gate-Source Forward Voltage 0.7 Vv Ia = 1mA, Vos = OV DYNAMIC ts Common-Source Forward Transconductance 6 4.5 9 4.5 9 ms Voe = 10V, Ip = 5mA Gos Common-Source Output Conductance 70 200 200 mS f= 1kHz Ciss Common-Source Input Capacitance 3 F Vos = 10V, |p = 5mA Ciss Common-Source Reverse Transfer Capacitance | 1 P f= 1MHz en Equivalent Input Noise Voltage 4 avi fHz Maebteas ip = SmA MATCHING | Vas1-Vasa|_ | Differential! Gate-Source Voltage 6 10 20 mV Voe = 10V, Ip = 5mA D| Vas1-Vasz| | Gate-Source Voltage Differential Change with | 20 mv/C T = -55 to 25C | Vog 10, DT Temperature 20 T =25to 125C ID = 5mA loss1 : : . Tpss> Saturation Drain Current Ratio 0.97 Vos = 10V, Vas = 0V Qfs1 . Voa = 10V, lb = 5mA Gisa Transconductance Ratio 0.97 f= 1 kHz CMRR Common Made Rejection Ratio 85 oB Vop = 5 to 10V, Ip = 5mA NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300ms, duty cycle 4 3%. 8-71