SAMSUNG SEMICONDUCTGR.INC =. b4E OD ff 7ae4142 coov200 Tt 2N6520.. - PNP EPITAXIAL SILICON TRANSISTOR T-29-21 SS HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T. =25C) Characteristic Symbol Rating Unit Collector-Base Voitage Veo 350 V Collector-Emitter Voltage Veeo 350 Vv Emitter-Base Voltage Vepo -5 Vv Collector Current Ie -500 mA Base Current la -250 mA Collector Dissipation ~ Po 0.625 Ww Derate above 25C 5 mW/C Junction Temperature Tj 150 C Storage Temperature . Tstg -55~150 C 1, Emitter 2, Base 3, Collector > ELECTRICAL CHARACTERISTICS (T, =25C) Characteristic : Symbol Test Condition Min | - Max Unit Collector Base Breakdown Voltag BV cso kk=100zA, le=0 -350 v *Collector Emitter Breakdown Voltage BV ceo Ib=1MA, le=O0 -350 v Emitter Base Breakdown Voltage BV eso te=10pA, Ic=0 v Collector Cutoff Current topo Ves=~250V, =O -60 nA Emitter Cutoff Current leso Vea=-4V, Ic=O0 560 na *DC Current Gain Hee Vce=10V, l=imA . 20 Vce=10V, k=-10mA 30 Vee=10V, Ic=30MA 30 _ 200 Vee=10V, l= -50mA 20 200 Vce=10V, k= 100mA - 15 Collector-Emitter Saturation Voltage Vee (sat) | be=10mA, la=imA -0.30 Vv | te=-20mA, la=2mA -0.35 v tc=-30mA, lp=3mA -0.50 Vv b=50mA, la=5mA -1 Vv Base-Emitter Saturation Voltage Veg (sat) b= -10MA, lb=1mMA ~0.75 v : lb=-20mA, l= 2mMA 0,85 Vv : Ic=30mA, la=3mMA -0.90 Vv Base Emitter On Voltage - ) Vee (on) | Vce=10V, b= 100mA -2}+ Vv *Current Gain Bandwidth Product fr Vce=-20V, b= -10mA, f=20MHz 40 200 | MHz Collector Base Capacitance Cob Vep= 20V, le=O, f= 1MHz 6 pF Emitter Base Capacitance Ceb Vea= 0.5V, Ip=0, f= MHz . 100 | pF Tum On Time ton Vee (Off}=2V, Voc= 100V . 200 ns {=50mA, lat=10mA Tum Off Time toff Vec=100V, k=-50mA . 3.5 ns bi =.2=10mA * Pulse Test: PWS300us, Duty Cycles2% ae SAMSUNG SEMICONDUCTOR 470. eapen #SAMSUNG SEMICONDUCTOR INC = LHE OD Besc4a42 ooor201 1 i -2N6520 PNP EPITAXIAL SILICON TRANSISTOR on 1-29-21 . BASE EMITTER SATURATION VOLTAGE - DC CURRENT GAIN COLLECTOR EMITTER SATURATION VOLTAGE ber, DC CURRENT GAIN Vue(sat}, Vcg(sat) (mV), SATURATION VOLTAGE Lima), COLLECTOR CURRENT k{mA), COLLECTOR CURRENT TURN-ON TIME TEMPERATURE COEFFICIENTS Uns), TIME d R (mv/*C}, TEMPERATURE COEFFICIENTS -1.0 -2.0 ~3.0-60 -10 -20 -30 -50-100 4.0 2.0 -3.0 -5.0~10 -20 -30-50- komA}, COLLECTOR CURRENT i{mA), COLLECTOR CURRENT TURN-OFF TIME CURRENT GAIN-BANDWIDTH PRODUCT -20V bt 9 2 9 g z 2 2 2 wy i q g * A 5 3 -2.0 -3.0-5.0 -10 -20 -30 -50-100 - -2 - = -10 -20 -60 {ma}, COLLECTOR CURRENT I{mA}, COLLECTOR CURRENT . ck SAMSUNG SEMICONDUCTOR 474}SAMSUNG SEMICONDUCTOR INC LYE O Braeuise po0?e0e 4 i 2N6520. PNP EPITAXIAL SILICON TRANSISTOR a T-29-21 CAPACITANCE CalpF), ConpF), CAPACITANCE Ot 02 os 1 2 to 20 50 100 Veel), COLLECTORBASE VOLTAGE be SAMSUNG SEMICONDUCTOR 472