1
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
tab
1
2
3
DPAK
12
tab
3
IPAK
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 550 V
RDS(on),max 2Ω
ID3.6 A
Qg.typ 6 nC
ID,pulse 6.1 A
Eoss@400V 0.62 µJ
Type/OrderingCode Package Marking RelatedLinks
IPD50R2K0CE PG-TO 252
IPU50R2K0CE PG-TO 251 50S2K0CE see Appendix A
2
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
3.6
2.3 ATC = 25°C
TC = 100°C
Pulsed drain current2) ID,pulse - - 6.1 A TC=25°C
Avalanche energy, single pulse EAS - - 34 mJ ID =0.8A; VDD = 50V
Avalanche energy, repetitive EAR - - 0.05 mJ ID =0.8A; VDD = 50V
Avalanche current, repetitive IAR - - 0.8 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V
Gate source voltage VGS -20
-30
-
-
20
30 Vstatic;
AC (f>1 Hz)
Power dissipation (non FullPAK)
TO-252, TO-251 Ptot - - 33 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 150 °C -
Continuous diode forward current IS- - 2.5 A TC=25°C
Diode pulse current2) IS,pulse - - 6.1 A TC = 25°C
Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C,
tcond<2µs
Maximum diode commutation speed3) dif/dt - - 500 A/µsVDS=0...400V,ISD<=IS,Tj=25°C,
tcond<2µs
2Thermalcharacteristics
Table3ThermalcharacteristicsDPAK,IPAK
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 3.75 °C/W -
Thermal resistance, junction - ambient4) RthJA -
-
-
35
62
-°C/W
SMD version, device on PCB,
minimal footprint
SMD version, device on PCB, 6cm2
cooling area4)
Soldering temperature, wave- &
reflowsoldering allowed Tsold - - 260 °C reflow MSL 1
1) Limited by Tj max. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
4) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection. PCB
is vertical without air stream cooling.
4
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.05mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=500V,VGS=0V,Tj=25°C
VDS=500V,VGS=0V,Tj=150°C
Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
1.80
4.68
2.00
-ΩVGS=13V,ID=0.6A,Tj=25°C
VGS=13V,ID=0.6A,Tj=150°C
Gate resistance RG-7-Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 124 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 9 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
related1) Co(er) - 8 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related2) Co(tr) - 26 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 6 - ns VDD=400V,VGS=13V,ID=0.8A,
RG=5.3Ω
Rise time tr- 5 - ns VDD=400V,VGS=13V,ID=0.8A,
RG=5.3Ω
Turn-off delay time td(off) - 21 - ns VDD=400V,VGS=13V,ID=0.8A,
RG=5.3Ω
Fall time tf- 38 - ns VDD=400V,VGS=13V,ID=0.8A,
RG=5.3Ω
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 0.7 - nC VDD=400V,ID=0.8A,VGS=0to10V
Gate to drain charge Qgd - 3.5 - nC VDD=400V,ID=0.8A,VGS=0to10V
Gate charge total Qg- 6 - nC VDD=400V,ID=0.8A,VGS=0to10V
Gate plateau voltage Vplateau - 5.4 - V VDD=400V,ID=0.8A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
5
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.83 - V VGS=0V,IF=0.8A,Tf=25°C
Reverse recovery time trr - 110 - ns VR=400V,IF=0.8A,diF/dt=100A/µs
Reverse recovery charge Qrr - 0.35 - µC VR=400V,IF=0.8A,diF/dt=100A/µs
Peak reverse recovery current Irrm - 5.2 - A VR=400V,IF=0.8A,diF/dt=100A/µs
6
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 40 80 120 160
0
10
20
30
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
7
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
Diagram5:Typ.outputcharacteristicsTj=25°C
VDS[V]
ID[A]
0 5 10 15 20
0
1
2
3
4
5
6
7
8
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristicsTj=125°C
VDS[V]
ID[A]
0 5 10 15 20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
01234
3.20
3.40
3.60
3.80
4.00
4.20
4.40
4.60
4.80
5.00
5.20
5.40
5.60
5.80
6.00
5 V
5.5 V
6 V
6.5 V
7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-50 -25 0 25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
98%
typ
RDS(on)=f(Tj);ID=0.6A;VGS=13V
8
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0246810
0
1
2
3
4
5
6
7
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 2 4 6 8
0
1
2
3
4
5
6
7
8
9
10
120 V
400 V
VGS=f(Qgate);ID=0.8Apulsed;parameter:VDD
Diagram11:Avalancheenergy
Tj[°C]
EAS[mJ]
0 25 50 75 100 125 150 175
0
10
20
30
40
EAS=f(Tj);ID=0.8A;VDD=50V
Diagram12:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
440
460
480
500
520
540
560
580
VBR(DSS)=f(Tj);ID=1mA
9
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
Diagram13:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram14:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
Eoss=f(VDS)
Diagram15:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
125 °C
25 °C
IF=f(VSD);parameter:Tj
10
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trr
tFtS
Q
FQ
S
dIF/ dt
dIrr / dt
VDS(peak)
Q
rr = QF+ Q
S
trr =tF+tS
VDS
IF
VDS
IF
Rg1
Rg2
Rg1 = Rg2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
11
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
6PackageOutlines
2.0
ISSUE DATE
EUROPEAN PROJECTION
0
4mm
2.0
SCALE 0
REVISION
01-09-2015
05
DOCUMENT NO.
Z8B00003328
*) mold flash not included
MILLIMETERS
4.57 (BSC)
2.29 (BSC)
L4
D
N
H
E1
e1
e
E
D1
L3
1.18
0.51
0.90
5.02
9.40
6.40
4.70
5.97
3
b3
A
DIM
b2
c
b
c2
A1
5.00
MIN
2.16
0.64
0.46
0.65
0.46
0.00
0.046
0.020
0.035
0.198
0.252
0.185
0.235
0.370
1.70
1.00
5.60
5.84
6.22
6.73
1.25
10.48
0.180 (BSC)
0.090 (BSC)
3
0.067
0.220
0.039
0.230
0.265
0.049
0.245
0.413
0.197
0.085
0.025
0.018
0.026
0.018
0.000
5.50
MAX
2.41
0.15
1.15
0.60
0.89
0.98
INCHES
MIN
0.217
MAX
0.006
0.095
0.035
0.024
0.045
0.039
L
F6
F1
F2
F3
F4
F5
1.20
6.40
10.60
2.20
5.80
5.76
0.417
0.252
0.087
0.228
0.227
0.047
Figure1OutlinePG-TO252,dimensionsinmm/inches
12
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
33N
L2
L8.89
0.89 0.035
0.3509.65
1.37 0.054
0.380
4.57
2.29
MILLIMETERS
A1
b4
b2
b
A
DIM
D1
E
E1
c2
D
e1
e
c
0.90
2.16
0.64
0.65
4.95
MIN
0.46
5.97
5.04
6.35
4.70
0.46
0.035
0.025
0.085
0.185
0.250
0.198
0.235
0.018
0.018
0.195
0.026
1.14
0.89
2.41
1.15
5.50
MAX
0.89
6.22
5.77
6.73
5.21
0.60
INCHES
0.180
0.090
MIN
0.045
0.035
MAX
0.095
0.205
0.265
0.227
0.245
0.035
0.024
0.217
0.045
TO251-3-21/-341/-345
2.0
EUROPEAN PROJECTION
ISSUE DATE
SCALE
0
4mm
0
2.0
REVISION
31-08-2015
04
DOCUMENT NO.
Z8B00003330
0.85 0.0332.29 0.090L1
Figure2OutlinePG-TO251,dimensionsinmm/inches
13
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
7AppendixA
Table11RelatedLinks
•IFXCoolMOSWebpage:www.infineon.com
•IFXDesigntools:www.infineon.com
14
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Rev.2.3,2016-06-13Final Data Sheet
RevisionHistory
IPD50R2K0CE, IPU50R2K0CE
Revision:2016-06-13,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2012-12-05 Release of final version
2.1 2013-07-16 update to Halogen free mold compound
2.2 2015-11-17 Updated to qualified for standard grade & updated package drawing
2.3 2016-06-13 Updated ID ratings, Zth, SOA and Pd curves
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AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
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TrademarksupdatedAugust2015
OtherTrademarks
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