M38510/75403BRA - e2v - Datasheet.Live

MIL-M-38510/754B

8 March 2005

SUPERSEDING

MIL-M-38510/754A

29 June 1992

MILITARY SPECIFICATION

MICROCIRCUITS, DIGITAL, ADVANCED CMOS,

LATCHES, MONOLITHIC SILICON

This specification is approv ed for use by all Departments

and Agencies of the Department of Defen se.

The requirements for acquiring the prod uct herein consists of this specification sheet and MIL-PRF 38535

1. SCOPE

1.1 Scope. This specification covers the det ail requirements for monolithic silicon, advanced CMOS, logic microcircuits.

Two product assurance classes and a choice of case outlines, lead finishes , and radiation hardness assurance (RHA) are

provided and are reflected in the complete Part or Identifying Number (PIN). For this product, the requirements of MIL-M-38510

have been superseded by MIL-PRF-38535 (see 6.3).

1.2 Part or identifying number (PIN). The PIN is in accordance with MIL-PRF-38535 a nd as specified herein.

1.2.1 Device types. The device types are as follows:

Device type Circuit

01 To be included at a later date

02 To be included at a later date

03 Octal transparent latch with three-state outputs

04 Octal transparent latch with inverted three-state outputs

05 Octal D-type latch with inverted three-state outputs

06 Octal D-type latch with three-state outputs

1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535.

1.2.3 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style

R GDIP1-T20 or CDIP2-T20 20 Dual-in-line

S GDFP2-F20 or CDFP3-F20 20 Flat pack

Z GDFP1-G20 20 Flat pack with gull wing

2 CQCC1-N20 20 Square leadless-chip-carrier

Comments, suggestions, or questions on this document should be addressed to: Commander, Defense

Supply Center Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or email

CMOS@dscc.dla.mil. Since contact information can chan ge, you may want to verify the currency of this

address information using the ASSIST Online database at http://assist.daps.dla.mil

AMSC N/A FSC 5962

INCH-POUND

Reactivated after 8 March 2005 and may be used for new and existi ng designs and acquisitions

MIL-M-38510/754B

1.3 Absolute maximum ratings. 1/ 2/

Supply voltage range (VCC)........................................................................................ -0.5 V dc to +6.0 V dc

DC input voltage range (VIN)...................................................................................... -0.5 V dc to VCC + 0.5 V dc

DC output voltage range (VOUT)................................................................................. -0.5 V dc to VCC + 0.5 V dc

Clamp diode current (IIK, IOK) ..................................................................................... ±20 mA

DC output current (IOUT)............................................................................................. ±50 mA

DC VCC or GND current (ICC, IGND) ............................................................................. ±100 mA

Storage temperature range (TSTG) ............................................................................. -65°C to +150°C

Maximum power dissipation (PD)............................................................................... 500 mW

Lead temperature (soldering, 10 seconds) ................................................................ +300°C

Thermal resistance, junction-to-case (θJC)................................................................. See MIL-STD-1835

Junction temperature (TJ) .......................................................................................... +175°C

Case operating temperature rang e (TC)..................................................................... -55°C to +125°C

1.4 Recommended operating conditions. 2/ 3/ 4/

Supply voltage range (VCC)........................................................................................ +3.0 V dc to +5.5 V dc

Input voltage range (VIN)............................................................................................ +0.0 V dc to VCC

Output voltage range (VOUT)....................................................................................... +0.0 V dc to VCC

Case operating temperature rang e (TC)..................................................................... -55°C to +125°C

Maximum low level input voltage (VIL) ....................................................................... 0.90 V dc at VCC = 3.0 V dc

1.35 V dc at VCC = 4.5 V dc

1.65 V dc at VCC = 5.5 V dc

Minimum high level input voltage (VIH)....................................................................... 2.10 V dc at VCC = 3.0 V dc

3.15 V dc at VCC = 4.5 V dc

3.85 V dc at VCC = 5.5 V dc

Input rise and fall rate (∆t/∆V) maximum:

CC = 3.6 V, VCC = 5.5 V ......................................................................................... 8 ns/V

Minimum setup time, Dn to LE (ts): Device type: 03 04 05 and 06 Units

CC = 3.0 V dc; TC = +25°C, -55°C ................................................ 5.5 2.0 2.0 ns

C = +125°C.......................................................... 6.5 2.0 2.0 ns

CC = 4.5 V dc; TC = +25°C, -55°C ................................................ 4.0 2.0 2.0 ns

C = +125°C.......................................................... 5.0 2.0 2.0 ns

Minimum hold time, Dn to LE (th): Device type: 03 04 05 and 06 Units

CC = 3.0 V dc; TC = +25°C, -55°C ................................................ 1.0 5.0 5.0 ns

C = +125°C.......................................................... 1.0 5.0 5.0 ns

CC = 4.5 V dc; TC = +25°C, -55°C ................................................ 1.0 3.0 3.0 ns

C = +125°C.......................................................... 1.0 3.0 3.0 ns

Minimum LE pulse width (tw): Device type: 03 04 05 and 06 Units

CC = 3.0 V dc; TC = +25°C, -55°C ................................................ 5.5 10.0 10.0 ns

C = +125°C.......................................................... 6.5 10.0 10.0 ns

CC = 4.5 V dc; TC = +25°C, -55°C ................................................ 5.0 6.0 6.0 ns

C = +125°C.......................................................... 5.0 6.0 6.0 ns

1.5 Radiation features.

Maximum total dose available (dose rate = 50 – 300 rads (Si)/s):

Device type 03...................................................................................................... 100 krads (Si)

Single Event Latch-up (SEL) ................................................................................ ≥ 93 MeV-cm2/mg

1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performanc e and affect reliability. The maxi mum junction temperature may be exceede d for

allowable short duratio n burn-in screening co nditions in accordance with MIL-PRF- 38535.

2/ Unless otherwise noted, all voltages are referenced to GND.

3/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data

retention implies no input transitions a nd no stored data loss with the following conditions: VIH ≥ 70 percent of VCC, VIL ≤ 30

percent of VCC, VOH ≥ 70 percent of VCC at –20 µA, VOL ≤ 30 percent of VCC at 20 µA.

4/ Unless otherwise specified, the values listed ab ove shall apply over the full VCC and TC recommended operating range.

MIL-M-38510/754B

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does

not include documents cited in other sections of this specification or recommend ed for additional information or as examples.

While every effort has been made to e nsure the completeness of this list, document users are cautioned that they must meet all

specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications and Standards. The following specifications and stan dards form a part of this speci f ication to the extent

specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 - Test Method Standard Microci rcuits.

MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.

(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from

the Standardization Document Order Desk, 700 Robbins Avenue, Buildin g 4D, Philadelphia, PA 19111-5094.)

2.3 Non-Government publications. The following document(s) form a part of this document to the extent specifie d herein.

Unless otherwise specified, th e issues of these documents are those cited in the solicitation or contract.

ELECTRONIC INDUSTRIES ALLIANCE (EIA)

EIA/JEDEC Standard No. 78 - IC Latch-Up Test

JEDEC Standard No. 20 - Standard for Description of 54/74ACXXXXX and 54/74ACTXXXXX Advanced High-Speed

CMOS Devices

(Copies of these documents a r e available on line at http://www.jedec.org or from Electronic Industries Alliance, 2500 Wil son

Boulevard, Arlington, VA 22201-3834).

2.4 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the

text of this document takes precedenc e. Nothing in this document, however, supersedes applicable laws and regulations unless

a specific exemption has been obtained.

3. REQUIREMENTS

3.1 Qualification. Microcircuits furnished under this specification shall be prod ucts that are manufactured by a manufacturer

authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and

6.4).

3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as specified

herein or as modified in the d evice ma nufacturer's Quality Management (QM) plan. T he modification in the QM plan shall not

affect the form, fit, or function as described herein.

3.3 Design, construction, and physical dime nsions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and herein.

3.3.1 Terminal connections. The terminal connections shall be as specified on figure 1.

3.3.2 Truth tables. The truth tables shall be as specified on figure 2.

MIL-M-38510/754B

3.3.3 Voltage levels for ground bounce. The voltage levels for ground bounce shall be as specified on figure 3.

3.3.4 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4.

3.3.5 Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to the

qualifying activity or preparing activity upon request.

3.3.6 Case outlines. The case outlines shall be as specified in 1.2.3 herein.

3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6).

3. 5 Electrical performance characteristics and post irradiation end-point electrical parameter limits. Unless otherwise

specified, the electrical performance characteristics and postirradiation end-point electric al parameter limits are as specified in

table I and apply over the case operating temperature range specified. Test conditions for these specified characteristics and

limits are as specified in table I.

3.6 Electrical test requirements. The electrical test requirements for each device class shall be the subgroups specified in

table II. The electrical tests for each subgroup are described in table I. Radiation hardness assurance level M, D, P, L , and R

(see MIL-PRF-38535) in table I are postirradiation end-point electrical parameters.

3.7 Marking. Marking shall be in accordance with MIL-PRF-38535.

3.7.1 Radiation hardness assurance identifier. The radiation hardness assurance identifier shall b e in accordance with

MIL-PRF-38535 and herein (see 3.6).

3.8 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 38 (see

MIL-PRF-38535, appendix A).

MIL-M-38510/754B

TABLE I. Electrical performance characteristi c s.

Limits 1/

Test and

MIL-STD-883

test method

Symbol

Test conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherwise specified

Device

type 2/

VCC Group A

subgroups Min Max

Unit

VOH1

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 2.10 V

VIL = 0.90 V

For all other inputs,

VIN = VCC or GND

IOH = -50 µA

All 3.0 V 1, 2, 3 2.9

VOH2

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.15 V

VIL = 1.35 V

For all other inputs,

VIN = VCC or GND

IOH = -50 µA

All 4.5 V 1, 2, 3 4.4

For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.85 V

VIL = 1.65 V

All 5.5 V 1, 2, 3 5.4

M 5.4

D 5.4

VOH3

4/ 5/

For all other inputs,

VIN = VCC or GND

IOH = -50 µA P, L, R

03 1

5.4

VOH4

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 2.10 V

VIL = 0.90 V

For all other inputs,

VIN = VCC or GND

IOH = -4.0 mA

All 3.0 V 1, 2, 3 2.4

For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.15 V

VIL = 1.35 V

All 4.5 V 1, 2, 3 3.7

M 3.7

D 3.7

VOH5

4/ 5/

For all other inputs,

VIN = VCC or GND

IOH = -24 mA P, L, R

03 1

3.7

VOH6

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.85 V

VIL = 1.65 V

For all other inputs,

VIN = VCC or GND

IOH = -24 mA

All 5.5 V 1, 2, 3 4.7 V

For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.85 V

VIL = 1.65 V

All

1, 2, 3 3.85

M 3.85

D 3.85

High level

output voltage

3006

VOH7

4/ 5/ 6/

For all other inputs,

VIN = VCC or GND

IOH = -50 mA P, L, R

5.5 V

3.85

See footnotes at end of table.

MIL-M-38510/754B

TABLE I. Electrical performance characteristi c s - Continued.

Symbol

Device

type 2/

VCC Group A

subgroups

Limits 1/

Test and

MIL-STD-883

test method

Test conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherwise specified Min Max

Unit

VOL1

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 2.10 V

VIL = 0.90 V

For all other inputs,

VIN = VCC or GND

IOL = 50 µA

All 3.0 V 1, 2, 3 0.1

VOL2

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.15 V

VIL = 1.35 V

For all other inputs,

VIN = VCC or GND

IOL = 50 µA

All 4.5 V 1, 2, 3 0.1

For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.85 V

VIL = 1.65 V

All 5.5 V 1, 2, 3 0.1

M 0.1

D 0.1

VOL3

4/ 5/

For all other inputs,

VIN = VCC or GND

IOL = 50 µA P, L, R

03 1

0.1

1, 3 0.4 VOL4

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 2.10 V

VIL = 0.90 V

For all other inputs,

VIN = VCC or GND

IOL = 12 mA

All 3.0 V

2 0.5

1, 3 0.4 For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.15 V

VIL = 1.35 V

All 2 0.5

M 0.4

D 0.4

VOL5

4/ 5/

For all other inputs,

VIN = VCC or GND

IOL = 24 mA P, L, R

4.5 V

0.4

1, 3 0.4

VOL6

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.85 V

VIL = 1.65 V

For all other inputs,

VIN = VCC or GND

IOL = 24 mA

All 5.5 V

2 0.5

For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.85 V

VIL = 1.65 V

All 1, 2, 3

1.65

M 1.65

D 1.65

Low level output

voltage

3007

VOL7

4/ 5/ 6/

For all other inputs,

VIN = VCC or GND

IOL = 50 mA P, L, R

5.5 V

1.65

See footnotes at end of table.

MIL-M-38510/754B

TABLE I. Electrical performance characteristi c s - Continued.

Symbol Device

type 2/ VCC Group A

subgroups Limits 1/

Test and

MIL-STD-883

test method

Test conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherwise specified Min Max

Unit

For input under test,

IIN = 1 mA All 1 0.4 1.5

M 0.4 1.5

D 0.4 1.5

Positive input

clamp voltage

3022

VIC+

4/ 5/

P, L, R

GND

0.4 1.5

For input under test,

IIN = -1 mA All 1 -0.4 -1.5

M -0.4 -1.5

D -0.4 -1.5

Negative input

clamp voltage

3022

VIC-

4/ 5/

P, L, R

Open

-0.4 -1.5

1 -0.1 For input under test,

VIN = GND

For all other inputs,

All 2 -1.0

M -0.1

D -0.1

Input current

low

3009

IIL

4/ 5/

VIN = VCC or GND

P, L, R

5.5 V

-0.1

µA

1 0.1 For input under test,

VIN = VCC

For all other inputs,

All 2 1.0

M 0.1

D 0.1

Input current

high

3010

IIH

4/ 5/

VIN = VCC or GND

P, L, R

5.5 V

0.1

µA

1 2.0 For all inputs,

VIN = VCC or GND All 2 40.0

M 15.0

D 75.0

Quiescent supply

current, output

three state

3005

ICCZ

4/ 5/

P, L, R

5.5 V

700.0

µA

1 2.0 For all inputs,

VIN = VCC or GND All 2 40.0

M 15.0

D 75.0

Quiescent supply

current, output

high

3005

ICCH

4/ 5/

P, L, R

5.5 V

700.0

µA

1 2.0 For all inputs,

VIN = VCC or GND All 2 40.0

M 15.0

D 75.0

Quiescent supply

current, output

low

3005

ICCL

4/ 5/

P, L, R

5.5 V

700.0

µA

1, 3 -0.5 For output under test,

VOUT = GND All 2 -10.0

M -1.0

D -3.0

Three-state

output leakage

current low

3020

IOZL

4/ 5/ 7/

P, L, R

5.5 V

-20.0

µA

1, 3 +0.5 For output under test,

VOUT = VCC All 2 +10.0

M +1.0

D +3.0

Three-state

output leakage

current high

3021

IOZH

4/ 5/ 7/

P, L, R

5.5 V

+20.0

µA

Input capacitance

3012 CIN See 4.4.1c

TC = +25°C All GND 4

10 pF

Output capacitance

3012 COUT

8/ See 4.4.1c

TC = +25°C All 5.5 V 4

15 pF

See footnotes at end of table.

MIL-M-38510/754B

TABLE I. Electrical performance characteristi c s - Continued.

Symbol Device

type 2/ VCC Group A

subgroups Limits 1/ Test and

MIL-STD-883

test method

Test conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherwise specified Min Max

Unit

03, 04 60

Power dissipation

capacitance CPD

9/ See 4.4.1c

TC = +25°C

01, 02 0 1000 Low level

ground bounce

noise

VGBL

10/ 11/ VLD = 2.5 V

IOL = +24 mA

VIN = 4.5 V or 0.0 V

See figure 3 03, 04,

05, 06

4.5 V 4

0 2000

01, 02 0 1000 High level

ground bounce

noise

VGBH

10/ 11/ VLD = 2.5 V

IOH = -24 mA

VIN = 4.5 V or 0.0 V

See figure 3 03, 04,

05, 06

4.5 V 4

0 2000

Latch-up input/

output over-

voltage

ICC

(O/V1)

12/

tw ≥ 100 µs

tcool ≥ tw

5 µs ≤ tr ≤ 5 ms

5 µs ≤ tf ≤ 5 ms

Vtest = 6.0 V

VCCQ = 5.5 V

Vover = 10.5 V

All 5.5 V 2 200 mA

Latch-up input/

output positive

over-current

ICC

(O/I1+)

12/

tw ≥ 100 µs

tcool ≥ tw

5 µs ≤ tr ≤ 5 ms

5 µs ≤ tf ≤ 5 ms

Vtest = 6.0 V

VCCQ = 5.5 V

Itrigger = +120 mA

All 5.5 V 2 200 mA

Latch-up input/

output negative

over-current

ICC

(O/I1-)

12/

tw ≥ 100 µs

tcool ≥ tw

5 µs ≤ tr ≤ 5 ms

5 µs ≤ tf ≤ 5 ms

Vtest = 6.0 V

VCCQ = 5.5 V

Itrigger = -120 mA

All 5.5 V 2 200 mA

Latch-up supply

over-voltage ICC

(O/V2)

12/

tw ≥ 100 µs

tcool ≥ tw

5 µs ≤ tr ≤ 5 ms

5 µs ≤ tf ≤ 5 ms

Vtest = 6.0 V

VCCQ = 5.5 V

Vover = 9.0 V

All 5.5 V 2 100 mA

See footnotes at end of table.

MIL-M-38510/754B

TABLE I. Electrical performance characteristics - Continued.

Symbol

Device

type 2/

VCC Group A

subgroups

Limits 1/

Test and

MIL-STD-883

test method

Test conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherwise specified Min Max

Unit

M L H

D L H

VIL = 0.45 V

VIH = 2.50 V

Verify output VOUT P, L, R

03 3.0 V 7

L H

Truth table test

output voltage

3014

4/ 5/

13/

VIL = 0.60 V, VIH = 3.70 V

Verify output VOUT All 4.5 V 7, 8 L H

9, 11 1.0 13.5 03 10 1.0 16.5

9, 11 1.0 14.0 04 10 1.0 16.0

9, 11 1.0 14.5 05 10 1.0 16.0

9, 11 1.0 11.5

CL = 50 pF minimum

RL = 500Ω

See figure 4

06 10 1.0 12.5

M 1.0 13.5

D 1.0 13.5

P, L, R

3.0 V

1.0 13.5

9, 11 1.0 9.5 03 10 1.0 11.5

9, 11 1.0 10.0 04, 05 10 1.0 11.5

9, 11 1.0 8.0

CL = 50 pF minimum

RL = 500Ω

See figure 4

06 10 1.0 9.0

M 1.0 9.5

D 1.0 9.5

Propagation

delay time, Dn to

On or On

3003

tPHL1,

tPLH1

4/ 5/

14/ 15/

P, L, R

4.5 V

1.0 9.5

9, 11 1.0 13.5 03 10 1.0 16.5

9, 11 1.0 16.5

CL = 50 pF minimum

RL = 500Ω

See figure 4 04-06 10 1.0 18.5

M 1.0 13.5

D 1.0 13.5

P, L, R

3.0 V

1.0 13.5

9, 11 1.0 10.0 03 10 1.0 12.0

9, 11 1.0 12.0

CL = 50 pF minimum

RL = 500Ω

See figure 4 04-06 10 1.0 13.0

M 1.0 10.0

D 1.0 10.0

Propagation

delay time, LE to

On or On

3003

tPHL2,

tPLH2

4/ 5/

14/ 15/

P, L, R

4.5 V

1.0 10.0

See footnotes at end of table.

MIL-M-38510/754B

Symbol

Device

type 2/

VCC Group A

subgroups

Limits 1/

Test and

MIL-STD-883

test method

Test conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherwise specified Min Max

Unit

9, 11 1.0 12.0 03 10 1.0 14.0

9, 11 1.0 19.5

CL = 50 pF minimum

RL = 500Ω

See figure 4 04-06 10 1.0 22.0

M 1.0 12.0

D 1.0 12.0

P, L, R

3.0 V

1.0 12.0

9, 11 1.0 9.0 03 10 1.0 10.5

9, 11 1.0 13.0 04 10 1.0 14.5

9, 11 1.0 13.0

CL = 50 pF minimum

RL = 500Ω

See figure 4

05, 06 10 1.0 14.5

M 1.0 9.0

D 1.0 9.0

Propagation delay

time, output

enable, OE to On

or On

3003

tPZH,

tPZL

4/ 5/

14/ 15/

P, L, R

4.5 V

1.0 9.0

9, 11 1.0 13.0 03 10 1.0 16.0

9, 11 1.0 19.5

CL = 50 pF minimum

RL = 500Ω

See figure 4 04-06 10 1.0 22.0

M 1.0 13.0

D 1.0 13.0

P, L, R

3.0 V

1.0 13.0

9, 11 1.0 11.5 03 10 1.0 13.5

9, 11 1.0 13.0 04 10 1.0 14.5

9, 11 1.0 13.0 05 10 1.0 14.5

9, 11 1.0 13.5

CL = 50 pF minimum

RL = 500Ω

See figure 4

06 10 1.0 14.5

M 1.0 11.5

D 1.0 11.5

Propagation delay

time, output

disable, OE to On

or On

3003

tPHZ,

tPLZ

4/ 5/

14/ 15/

P, L, R

4.5 V

1.0 11.5

1/ Each input/output, as applicable, shall be tested at the specified temp erature for the specified limits. Output terminals not

designated shall be high level logic, low level logic, or o pen, except as follows:

a. VIC (pos) tests, the GND terminal can be open. TC = +25°C.

b. VIC (neg) tests, the VCC terminal shall be open. TC = +25°C.

c. All ICC tests, the output terminal shall be open. When performing thes e tests, the current meter shall be

placed in the circuit such that all current flows through the meter.

For negative and positive voltage and current values, the sign designates the potential difference in reference to GND and

the direction of current flow, respectively; and the absolute value of the magnitude, not the sign, is relative to the minimum

and maximum limits, as applicabl e, listed herein.

MIL-M-38510/754B

TABLE I. Electrical performance characteristi c s - Continued.

2/ The word “All” in the device type column means non-RHA limits for all devices types. M, D, P, L, and R in the conditions

column specify the postirradiat ion limits for those device types specified in the device type column.

3/ This parameter is guaranteed, if not tested, to the limits specified in table I.

4/ RHA samples do not have to be tested at -55°C and +125°C prior to irradiation.

5/ When performing postirradiation electrical measurements for any RHA level, TA = +25°C. Limits shown are guaranteed at

A = +25°C ±5°C.

6/ Transmission driving tests are performed at VCC = 5.5 V dc with a 2 ms duration ma ximum.

7/ Three-state output conditions are required. For IOZL, set outputs to high state. For IOZH, set outputs to low state. Set output

enable control pins to VIL = VIL(MAX) a nd VIH = VIH(MIN), as required.

8/ Set output enable control pins to VCC or GND, as applicable, to disable the outputs.

9/ Power dissipation capacitance (CPD) determines the no load dynamic power cons umption,

PD = (CPD + CL) (VCC x VCC)f + (ICC x VCC) and the dynamic current consumption, IS = (CPD + CL)VCCf + ICC. For both CPD and

IS, f is the frequency of the input signal.

10/ This test is for qualification only. Ground bounce tests are performed on a nonswitching (quiescent) output and are used to

measure the magnitude of induced noise caused by other simultaneously switching outputs. The test is performed on a low

noise bench test fixture with all outputs fully dc loaded (IOL maximum and IOH maximum = i.e., ±24 mA) and 50 pF of load

capacitance (see figure 3). The loads must be located as close as possible to the device output. Inputs are then

conditioned with 1 MHz pulse (tr = tf = 3.5 ±1.5 ns) switching simultaneously and in phase such that on e output is forced low

and all others (possible) are switched. T he low level ground bounce noise is measured at the quiet outp ut using a F.E.T.

oscilloscope probe with at least 1 MΩ impedance. Measurement is taken from the peak of the largest positive pulse with

respect to the nominal low level output voltage (figur e 3). The device inputs are then conditioned such that the output under

test is at a high nominal VOH level. The high level groun d bounce measurement is then measured from nominal VOH level to

the largest negative peak. This procedure is repeated such that all outputs are tested at a high and low level with a

maximum number of outputs switching.

11/ When used in asynchronous TTL compatible s ystems, ground bounce (VGBL and VGBH) = 2000 mV can be a possible

problem.

12/ See EIA/JEDEC STD. No. 78 for electrically induced latch-up test methods and pr ocedures. The values listed for Itrigger and

Vover are to be accurate within ±5 percent.

13/ Tests shall be performed in sequence, attributes data only. Functional tests shall include the truth tables and other logic

patterns used for fault detection. Functional tests shall be performed in s equence as approved by the qua lifying activity on

qualified devices. H ≥ 2.5 V, L < 2.5 V; high inputs = 3.7 V and low inputs = 0.6 V for VCC = 4.5 V and H ≥ 1.5 V,

L < 1.5 V; high inputs = 2.5 V and low inputs = 0.45 V for VCC = 3.0 V. Tests at VCC = 3.0 V are for RHA specified d evices

only (TA = +25°C ±5°C). Functional tests at VCC = 3.0 V are worst case for RHA specified devices.

14/ Devices are tested at VCC = 3.0 V and VCC = 4.5 V at TC = +125°C for sample testing and at VCC = 3.0 V and VCC = 4.5 V at

TC = +25°C for screening. Other voltages of VCC and temperatures are guaranteed, if not tested. See 4.4.1d.

15/ AC limits at VCC = 5.5 V are equal to the limits at VCC = 4.5 V and guaranteed by testing at VCC = 4.5 V. Minimum ac limits

for VCC = 5.5 V are 1.0 ns and guaranteed b y guardbanding the VCC = 4.5 V minimum lim its to 1.5 ns. For propagation delay

tests, all paths must be tested.

MIL-M-38510/754B

Device types 03 04 05 06

Case outlines R, S, Z, 2 R, S, 2 R, S, 2 R, S, 2

Terminal number Terminal symbol

GND

VCC

GND

VCC

GND

VCC

GND

VCC

FIGURE 1. Terminal connections.

MIL-M-38510/754B

Device type 03 Device type 04

Inputs Output Inputs Output

OE LE Dn On

H X X Z H X X Z

L H L L L H L H

L H H H L H H L

L L X On L L X On

Device type 05 Device type 06

Inputs Output Inputs Output

OE LE Dn On

H X X Z H X X Z

L H L H L H L L

L H H L L H H H

L L X On

H = High voltage level

L = Low voltage level

X = Irrelevant

Z = High impedance

On, On = No change

FIGURE 2. Truth tables.

MIL-M-38510/754B

NOTE: Resistor and capacitor tolerances = ±10%.

FIGURE 3. Voltage levels for ground bounce.

MIL-M-38510/754B

FIGURE 4. Switching waveforms and test circuit.

MIL-M-38510/754B

NOTES:

1. tr ≤ 3.0 ns; tf ≤ 3.0 ns; PRR ≤ 10 MHz; duty cycle = 50 percent.

2. CL = 50pF or equivalent (includes test jig and probe capacitance).

3. RL = 500Ω or equivalent.

4. RT = 50Ω or equivalent.

FIGURE 4. Switching waveforms and test circuit – Continued.

MIL-M-38510/754B

NOTES:

1. PREFERRED METHOD:

When measuring tPHZ or tPZH: VTEST = GND.

When measuring tPLZ or tPZL: VTEST = 2(VCC).

2. ALTERNATE METHOD:

When measuring tPHZ or tPZH: VTEST = Open.

When measuring tPLZ or tPZL: VTEST = 2(VCC).

3. CL = 50pF or equivalent (includes test jig and probe capacitance).

4. RL = 500Ω or equivalent.

5. RT = 50Ω or equivalent.

6. VIN = 0.0 V to VCC.

FIGURE 4. Switching waveforms and test circuit – Continued.

MIL-M-38510/754B

4. VERIFICATION

4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as

modified in the device manuf acturer's Quality Management (QM) plan. T he modification in the QM plan shall not affect the form,

fit, or function as described herein.

4.1.1 Burn-in and life test circuits. Burn-in and life test circuits shall be constructed so that the devices are stressed at the

maximum operating condition s stated in 4.2c or 4.2d, as applicable, or equivalent as approved by the qualifyin g activity.

4.2 Screening. Screening shall b e in accordance with MIL-PRF-38535 and shall be conducted on all devices prior to

qualification and conformance inspection. The following additional criteria shall apply:

a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified i n the

device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-i n test circuit shall be maintained

under document control by the devic e manufacturer's Technology Review Board (TRB) in accordance with

MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall

specify the inputs, outputs, biases, and power dissipation, as applicabl e, in accordanc e wit h the intent specified in

method 1015 of MIL-ST D-883.

b. Delete the sequence specified as interim (pre-burn-in) electrical parameters through interim (post-burn-in) electrical

parameters of table IA of MIL-PRF-38535 and substitute li nes 1 through 7 of table II herein.

c. Unless otherwise specified in the manufacturer’s QM plan for static burn-in, test condition A, method 1015 of

MIL-STD-883, test duration for each static test shall be 24 hours minim um for class S devi c es and in accordance

with table I of method 1015 for class B devices.

(1) For static burn-in I, all inputs shall be connected to GND. Outputs may be open or connected to

VCC/2 ±0.5 V. Resistors R1 are optional on both in puts and open outputs, and required on outputs

connected to VCC/2 ±0.5 V. R1 = 220Ω to 47 kΩ.

(2) For static burn-in II, all inputs shall be connected through the R1 resistors t o VCC. Outputs ma y be open or

connected to VCC/2 ±0.5 V. Resistors are opt ional on open outputs, and required on outputs connected to

VCC/2 ±0.5 V. R1 = 220Ω to 47 kΩ.

(3) VCC = 5.5 V +0.5 V, -0.00 V.

d. Unless otherwise specified in the manufacturer’s QM plan for dynamic burn-in, test condition D, method 1015 of

MIL-STD-883, the following shall apply:

(1) Input resistors = 220Ω to 2 kΩ ±20 percent.

(2) Output resistors = 220Ω ±20 percent.

(3) VCC = 5.5 V +0.5 V, -0.00 V.

(4) The output enable control pi ns shall be connected to VCC or GND, as applic able, to enable the outputs.

The latch enable control pins shall be connected to VCC or GND, as applicable, to enable the latch. All

other inputs shall be connected through the resistor to a clock pulse (CP). Outputs shall be connected to

VCC/2 ±0.5 V through the resistors.

(5) CP = 25 kHz to 1 MHz square wave; duty c ycle = 50 percent ±15 percent; VIH = 4.5 V to VCC,

VIL = 0 V ±0.5 V; tr, tf ≤ 100 ns.

e. Interim and fin al electrical test parameters shall be as specified in table II.

f. For class S devices, post dynamic burn-in, or class B devices, post static burn-in, electrical parameter measurements

may, at the manufacturer’s option, be performed separatel y or included in the final electrical parameter requirements.

MIL-M-38510/754B

4.2.1 Percent defective allowable (PDA).

a. The PDA for class S devices shall be 5 percent for static burn-in and 5 percent for dynamic burn-in, based on th e

exact number of devices submitted to each separate burn-in.

b. Static burn-i n I and II failures shall be cumulative for determining the PDA.

c. The PDA for class B devices shall be in accordance with MIL-PRF-38535 for static burn-in. Dynamic burn-in is not

required.

d. Those devices whose measur ed characteristics, after burn-in, exceed the specified delta (∆) limits or electrical

parameter limits specified in tabl e I, subgrou p 1, are defective and shall be removed from the lot. The verified

number of failed devices times 100 div ided by the total number of devices in the lot initially submitted to burn-in shall

be used to determine the percent defective for the lot and the lot shall be accepted or rejected based on the specified

PDA.

4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535.

4.4 Technology Conformance inspection (TCI) . T echnology conformance inspection shall be in accordance with

MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.5).

4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows:

a. Tests shall be performed in accordance with table II herein.

b. O/V and O/I (latch-up) tests and VGBL/H (ground bounce) tests shall be measured only for initial qualification an d

after process or design changes which may affect the performance of the device. Latch-up test shall be considered

destructive. Test all applicable pins on 5 d evices with no failures.

c. CIN, COUT, and CPD shall be measured only for initial qualification and after process or design changes that ma y

affect capacitance. CIN and COUT shall be measured between the design ated terminal and GND at a frequency of 1

MHz. CPD shall be tested in accordance with the latest revision of JEDEC Standard No. 20 and table I herein. For

CIN, COUT, and CPD, test all applicable pins on five devices with zero failures.

d. Subgroups 9 and 11 shall be measured only for initial qualification and after process or design changes which may

affect dynamic performance.

e. Subgroups 7 and 8 tests shall be sufficient to verify the truth table.

4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535.

4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as foll ows:

a. End-point e lectrical parameters shall be as specified in table II herein. Delta limits shall apply only to subgroup 1 of

group C inspection and shall consist of tests specified in table III herein.

b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified

in the device manufacturer's QM plan in accordance with MIL-PRF-38535. T he burn-in test circuit shall be

maintained under document control b y the device manufacturer's Technology Review Board (TRB) in accordance

with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit

shall specify the inp uts, outpu ts, biases, and power dissipation, as applicable, in accordance with the intent specified

in method 1005 of MIL-STD-883.

MIL-M-38510/754B

TABLE II. Burn-in and electrical test requirements.

Class S device 1/ Class B device 1/

Line

no. MIL-PRF-38535

test requirements Reference

paragraph Table I

subgroups

Table III

delta limits

Reference

paragraph Table I

subgroups

Table III

delta

limits 3/

1 Interim electrical

parameters 1 1

2 Static burn-in I

(method 1015) 4.2c

4.5.2 Req’d

4/ Not req’d

3 Same as line 1 1 ∆

4 Static burn-in II

(method 1015) 4.2c

4.5.2 Req’d

4/ 4.2c

4.5.2 Req’d

5 Same as line 1 4.2e 1* ∆ 4.2e 1* ∆

6 Dynamic burn-in

(method 1015) 4.2d

4.5.2 Req’d

4/ Not req’d

7 Same as line 1 4.2e 1 ∆

8 Final electrical

parameters 1*, 2, 7*, 9 1*, 2, 7, 9

9 Group A test

requirements

(method 5005)

4.4.1 1, 2, 3, 4, 7,

8, 9, 10, 11 4.4.1 1, 2, 3, 4, 7,

8, 9, 10, 11

10 Group B test

when using the

method 5005

QCI option

4.4.2 1, 2, 3, 7, 8,

9, 10, 11 ∆

11 Group C end-

point electrical

parameters

(method 5005)

4.4.3 1, 2

∆

12 Group D end-

point electrical

parameters

(method 5005)

4.4.4 1, 2, 3 4.4.4 1, 2

13 Group E end-

point electrical

parameters

(method 5005)

4.4.5 1, 7, 9 4.4.5 1, 7, 9

1/ Blank spaces indic ate tests are not ap plicable.

2/ * indicates PDA applies to su bgroups 1 and/or 7, as applicable (se e 4.2.1).

3/ ∆ indicates delta limits and shall be required only on table I, subgroup 1, where specified, and the delta values shall be

computed with reference to the previous int erim electrical parameters (line 1).

4/ On all class S lots, the device manufactur er shall maintain read-and-record data (as a mini mum on disk) for burn-in electrical

parameters (group A, subgroup 1), in accordance with method 5004 of MIL-STD-833. For preburn-in and interim electrical

parameters, the read-and-rec ord requirements are for delta measurements only.

5/ The device manufacturer ma y, at his option, either complete subgroup 1 electrical parameter measurements, including delta

measurements, within 96 hour s after burn-in completion (removal of bias) or may complete subgroup 1 electrical

measurements without delta measurements within 24 hours after burn-in completion (removal of bias). When the

manufacturer elects to perform the subgroup 1 electrical parameter measurements without delta measurements, there is no

requirement to perform the pre-burn-in electrical tests (first interim electrical parameters test in table II).

MIL-M-38510/754B

TABLE III. Delta limits at 25°C.

Parameter 1/ Device types Limits

ICCH, ICCL, ICCZ All

±100 nA

1/ The above parameters shall be recorded before and

after the required burn-in and life tests to determine deltas (∆).

4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End-point electrical

parameters shall be as specified in table II herein.

4.4.5 Group E inspection. Group E inspection is required onl y for parts intended to be marked as radiation h ard ness

assured (see 3.7 herein). RHA levels for device classes B and S shall be as specified in MIL-PRF-385 35.

a. End-p oint e lectrical parameters shall be as specified in table II herein.

b. F or device classes B and S, subgroups 1 an d 2 in table V, method 5005 of MIL-STD-883 shall be tested as

appropriate for device construction.

c. RHA tests for device classes B and S for levels M, D, P, L, and R shall be performed thro ugh each level to

determine at what levels the devices meet the RHA requirements. These RHA tests shall be performed for

initial qualification and after design or process chang es which may affect the RHA performance of the device.

d. Prior to irrad iation, each selected sample shall be assembled in its qualified package. It shall pass the specified

group A electrical parameters in table I for subgr oups specified in table II herein.

e. F or device classes B and S, the devices shall be subjected to radiation hardness assurance tests as specified in

MIL-PRF-38535 for the RHA level being tested. All devic e classes must meet the postirradiation end-point

electrical parameter limits as defined i n table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in

table II herein.

4.4.5.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883,

method 1019, condition A, and as specified herein. Prior to and during total dose irradi ation characterization and testin g, the

devices for characterization shall b e biased so that 50 percent are at inputs high and 50 p ercent are at in puts low, and the

devices for testing shall be biased to the worst case condition established during characterization. Device s shall be biased

as follows:

a. Input tested high, VCC = 5.5 V dc +5%, RCC = 10Ω +20%, VIN = 5.0 V dc +5%, RIN = 1 kΩ +20%, and all outputs

are open.

b. Inputs tested low, VCC = 5.5 V dc +5%, RCC = 10Ω +20%, VIN = 0.0 V dc, RIN = 1 kΩ +20%, and all outputs are

open.

4.4.5.1.1 Accelerated aging test. Accelerated aging shall be performed on class B and S devices requiring an RHA level

greater that 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specifie d in table I herein and

shall be the preirradiation end-point electrical parameter limit at +25°C ±5°C. Testing shall be performed at initial

qualification and after any des ign or process changes which may affect the RHA response of the device.

MIL-M-38510/754B

4.5 Methods of inspection. Methods of inspection shall be specified and as follows:

4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal.

Currents given are convention al current and positive when flowing into the referenced terminal.

4.5.2 Burn-in and life test cool down procedures. When the burn-in and life tests are completed and prior to removal of bias

voltages, the devices under test (DUT) shall be cooled to within 10°C of their power stable condition at room temperature; then,

electrical parameter end-point measurements shall be performed.

4.5.3 Quiescent supply current. When performing quiescent supply current measurements (ICC), the meter shall be pl aced so

that all currents flow through the meter.

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packa ging requirements shall be as specified in the contr act or order (se e 6.2).

When packaging of materiel i s to be performed by DoD or in-house contractor personnel, these personnel need to contact the

responsible packaging activity to ascertain packaging requirements. Packaging requirem ents ar e maintained by the Inventory

Control Point’s packaging activity within the Military Service or Defense Agency, or within the military service’s system

commands. Packaging data retrieval is available from the managing Milit ary Department’s or Defense Agency’ s automated

packaging files, CD-ROM products, or by contacting the responsible packaging activit y.

6. NOTES

(This section contains information of a g eneral or explanatory nature that may be helpful, but is not mandatory.)

6.1 Intended use. Microcircuits conforming to this specification are intended for original equipment desi gn application and

logistic support of existing equipment.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of the specification.

b. PIN and compliance i de ntifier, if applicable (see 1.2).

c. Requirements for delivery of o ne copy of the conformance inspection data pertinent to the device inspection lot to be

supplied with each shipment by the device manufactur er, if app licable.

d. Requirements for certificate of compliance, if applicable.

e. Requirements for notification of change of product or proces s to contracting activity in addition to notification to the

qualifying activity, if applicable.

f. Requirements for failure analysis (including required test condition of method 5003 of MIL-STD-883), corrective

action and reporting of results, if applicable.

g. Requirements for product assurance and radiation hardness assurance options.

h. Requirements for speci al carriers, lead lengths, or lead forming, if applicable. These requirements should not affect

the PIN. Unless otherwise specified, these requirements will not ap ply to direct purchase by or direct shipment to the

Government.

i. Requirements for "JAN" marking.

j. Packaging requirements (see 5.1).

MIL-M-38510/754B

6.3 Superseding inform ation. The requirements of MIL-M-38510 have been superseded to take advantage of the available

Qualified Manufacturer Listing (QML) system provided by MIL-PRF-38535. Previous references to MIL-M-38510 in this

document have been replaced by appropriate references to MIL-PRF-38535. All technical requirements now consist of this

specification and MIL-PRF-3853 5. The MIL-M-38510 specification she et numb er and PIN have been retained to avo id

adversely impacting existing government logistics systems and contractors parts lists.

6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the

time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-38535 whether or not such products have

actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are

urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that

they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information

pertaining to qualification of products may be obtained from DSCC-VQ, P.O. Box 3990, Columbus, Ohio 43218-3990.

6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined i n

MIL-PRF-38535, MIL-HDBK-1331, and as follows:

IN ............................................... Input terminal-to-GND capacitance

OUT............................................. Output terminal-to-GND capacitance

GND ........................................... Ground zero voltage potential

CCH .............................................. Quiescent supply current, outputs high

CCL .............................................. Quiescent supply current, outputs low

CCZ .............................................. Quiescent supply current, outputs three-state

IL ................................................. Input current low

IH................................................. Input current high

C ............................................... Case temperature

A................................................ Ambient temperature

CC .............................................. Positive supply voltage

PD .............................................. Power dissipation capacitance

IC ............................................... Input clamp voltage

GB .............................................. Ground bounce voltage

O/V.............................................. Latch-up over-voltage

O/I ............................................... Latch-up over-current

w.................................................. Trigger duration (width)

6.6 Logistic support. Lead materials and fini shes (see 3.4) are interchangeable. Unless otherwise specified, microcircuits

acquired for Government logistic support will be acquired to device class S for National Aeronautics and Space Admi nistration or

class B for Department of Defense (see 1.2.2), lead materi al and finish A (see 3.4). Longer length leads and lead forming

should not affect the part number.

6.7 Data reporting. When specified in the purchase order or contract, a copy of the following data, as applicab le, will be

supplied.

a. Attributes data for all screening tests (see 4.2) and variables data for all static burn-in, dynamic burn-in, RHA tests,

and steady-state life tests (see 3.6).

b. A copy of each radiograph.

c. The technolo gy conformance inspection (TCI) data (see 4.4).

d. Parameter distribution data on parameters evaluated during burn-in (see 3.6).

e. Final electrical parameters dat a (see 4.2e).

f. RHA delta limits.

MIL-M-38510/754B

6.8 Substitutability. T he cross-reference information below is presented for the convenience of users. Microcircuits covered

by this specification will functionally rep lace the listed generic-industry type. Generic-industry microcircuit types may not have

equivalent operation al performance characteristics across military temperature ranges, post irradiation performance or reliabil ity

factors equivalent to MIL-M-38510 device types and may have slight physical variations i n relation to case size. The presence

of this information should not be deemed as permitting substitution of generic-industr y types for MIL-M-38510 types or as a

waiver of any of the provisions of MIL-PRF -38535.

Military device

type 1/ Generic-industry

type

01 54AC75

02 54AC259

03 54AC373

04 54AC533

05 54AC563

06 54AC573

1/ Device types 01 and 02 will be included at a later date.

6.9 Changes from previous issue. Marginal notations are not used in this revision to ident ify changes with respect to the

previous issue due to the extent of the changes.

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 11 (Project 5962-2085)

DLA - CC

Review activities:

Army - MI, SM

Navy - AS, CG, MC, SH, TD

Air Force – 03, 19, 99

NOTE: The activities listed above were interested in this document as of the date of this document. Since organizati ons and

responsibilities can change, you should verify the currenc y of the information above using ASSIST Online database at

http://assist.daps.dla.mil.