PESD5V2S2UT - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2003 Aug 20 2004 Apr 15

DISCRETE SEMICONDUCTORS

PESDxS2UT series

Double ESD protection diodes in

SOT23 package

2004 Apr 15 2

Philips Semiconductors Product speciﬁcation

Double ESD protection diodes

in SOT23 package PESDxS2UT series

FEATURES

•Uni-directional ESD protection of up to two lines

•Max. peak pulse power: Ppp = 330 W at tp= 8/20 µs

•Low clamping voltage: V(CL)R = 20 V at Ipp =18A

•Ultra-low reverse leakage current: IRM < 700 nA

•ESD protection > 23 kV

•IEC 61000-4-2; level 4 (ESD)

•IEC 61000-4-5 (surge); Ipp = 18 A at tp= 8/20 µs.

APPLICATIONS

•Computers and peripherals

•Communication systems

•Audio and video equipment

•High speed data lines

•Parallel ports.

DESCRIPTION

Uni-directional double ESD protection diodes in a SOT23

plastic package. Designed to protect up to two

transmission or data lines from ElectroStatic Discharge

(ESD) damage.

MARKING

Note

1. * = p : made in Hong Kong.

* = t : made in Malaysia.

* = W : made in China.

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE(1)

PESD3V3S2UT *U9

PESD5V2S2UT *U1

PESD12VS2UT *U2

PESD15VS2UT *U3

PESD24VS2UT *U4

SYMBOL PARAMETER VALUE UNIT

VRWM reverse stand-off

voltage 3.3, 5.2, 12, 15

and 24 V

Cddiode capacitance

VR=0V;

f = 1 MHz

207,152,38,32

and 23 pF

number of

protected lines 2

PIN DESCRIPTION

1 cathode 1

2 cathode 2

3 common anode

sym022

001aaa490

Fig.1 Simplified outline (SOT23) and symbol.

2004 Apr 15 3

Philips Semiconductors Product speciﬁcation

Double ESD protection diodes

in SOT23 package PESDxS2UT series

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.

2. Measured across either pins 1 and 3 or pins 2 and 3.

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PESD3V3S2UT −plastic surface mounted package; 3 leads SOT23

PESD5V2S2UT

PESD12VS2UT

PESD15VS2UT

PESD24VS2UT

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Ppp peak pulse power 8/20 µs pulse; notes 1 and 2

PESD3V3S2UT −330 W

PESD5V2S2UT −260 W

PESD12VS2UT −180 W

PESD15VS2UT −160 W

PESD24VS2UT −160 W

Ipp peak pulse current 8/20 µs pulse; notes 1 and 2

PESD3V3S2UT −18 A

PESD5V2S2UT −15 A

PESD12VS2UT −5A

PESD15VS2UT −5A

PESD24VS2UT −3A

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

2004 Apr 15 4

Philips Semiconductors Product speciﬁcation

Double ESD protection diodes

in SOT23 package PESDxS2UT series

ESD maximum ratings

Notes

1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.

2. Measured across either pins 1 and 3 or pins 2 and 3.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

ESD electrostatic discharge

capability IEC 61000-4-2 (contact discharge);

notes 1 and 2

PESD3V3S2UT 30 kV

PESD5V2S2UT 30 kV

PESD12VS2UT 30 kV

PESD15VS2UT 30 kV

PESD24VS2UT 23 kV

HBM MIL-Std 883

PESDxS2UT series 10 kV

ESD standards compliance

ESD STANDARD CONDITIONS

IEC 61000-4-2; level 4 (ESD); see Fig.3 >15 kV (air); > 8 kV (contact)

HBM MIL-Std 883; class 3 >4 kV

handbook, halfpage

010

e−t

20 t (µs)

Ipp

(%)

120

MLE218

100 % Ipp; 8 µs

50 % Ipp; 20 µs

Fig.2 8/20 µs pulse waveform according to

IEC 61000-4-5.

001aaa191

Ipp

100 %

90 %

30 ns 60 ns

10 %

tr = 0.7 to 1 ns

Fig.3 ElectroStatic Discharge (ESD) pulse

waveform according to IEC 61000-4-2.

2004 Apr 15 5

Philips Semiconductors Product speciﬁcation

Double ESD protection diodes

in SOT23 package PESDxS2UT series

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VRWM reverse stand-off voltage

PESD3V3S2UT −−3.3 V

PESD5V2S2UT −−5.2 V

PESD12VS2UT −−12 V

PESD15VS2UT −−15 V

PESD24VS2UT −−24 V

IRM reverse leakage current

PESD3V3S2UT VRWM = 3.3 V −0.7 2 µA

PESD5V2S2UT VRWM = 5.2 V −0.15 1 µA

PESD12VS2UT VRWM = 12 V −<0.02 1 µA

PESD15VS2UT VRWM = 15 V −<0.02 1 µA

PESD24VS2UT VRWM = 24 V −<0.02 1 µA

VBR breakdown voltage IZ = 5 mA

PESD3V3S2UT 5.2 5.6 6.0 V

PESD5V2S2UT 6.4 6.8 7.2 V

PESD12VS2UT 14.7 15.0 15.3 V

PESD15VS2UT 17.6 18.0 18.4 V

PESD24VS2UT 26.5 27.0 27.5 V

Cddiode capacitance f = 1 MHz; VR=0V

PESD3V3S2UT −207 300 pF

PESD5V2S2UT −152 200 pF

PESD12VS2UT −38 75 pF

PESD15VS2UT −32 70 pF

PESD24VS2UT −23 50 pF

V(CL)R clamping voltage notes 1 and 2

PESD3V3S2UT Ipp =1A −−7V

Ipp =18A −−20 V

PESD5V2S2UT Ipp =1A −−9V

Ipp =15A −−20 V

PESD12VS2UT Ipp =1A −−19 V

Ipp =5A −−35 V

PESD15VS2UT Ipp =1A −−23 V

Ipp =5A −−40 V

PESD24VS2UT Ipp =1A −−36 V

Ipp =3A −−70 V

2004 Apr 15 6

Philips Semiconductors Product speciﬁcation

Double ESD protection diodes

in SOT23 package PESDxS2UT series

Notes

1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.

2. Measured either across pins 1 and 3 or pins 2 and 3.

Rdiff differential resistance

PESD3V3S2UT IR=1mA −−400 Ω

PESD5V2S2UT IR=1mA −−80 Ω

PESD12VS2UT IR=1mA −−200 Ω

PESD15VS2UT IR=1mA −−225 Ω

PESD24VS2UT IR= 0.5 mA −−300 Ω

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

GRAPHICAL DATA

001aaa147

103

102

104

Ppp

(W)

tp (µs)

110

103

10 102

(1)

(2)

Fig.4 Peak pulse power dissipation as a function

of pulse time; typical values.

Tamb =25°C.

tp= 8/20 µs exponential decay waveform; see Fig.2.

(1) PESD3V3S2UT and PESD5V2S2UT.

(2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT

Tj (°C)

0 20015050 100

001aaa193

0.4

0.8

1.2

Ppp

Ppp(25˚C)

Fig.5 Relative variation of peak pulse power as a

function of junction temperature; typical

values.

2004 Apr 15 7

Philips Semiconductors Product speciﬁcation

Double ESD protection diodes

in SOT23 package PESDxS2UT series

VR (V)

054231

001aaa148

120

160

200

240

(pF)

(1)

(2)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

Tamb = 25 °C; f = 1 MHz.

(1) PESD3V3S2UT; VRWM = 3.3 V.

(2) PESD5V2S2UT; VRWM =5V.

VR (V)

0252010 155

001aaa149

(pF)

(1)

(3)

(2)

Fig.7 Diode capacitance as a function of reverse

voltage; typical values.

Tamb = 25 °C; f = 1 MHz.

(1) PESD12VS2UT; VRWM =12V.

(2) PESD15VS2UT; VRWM =15V.

(3) PESD24VS2UT; VRWM =24V.

2004 Apr 15 8

Philips Semiconductors Product speciﬁcation

Double ESD protection diodes

in SOT23 package PESDxS2UT series

001aaa270

10−1

Tj (°C)

−100 150100050−50

IR(25˚C)

(1)

Fig.8 Relative variation of reverse leakage

current as a function of junction

temperature; typical values.

IR is less than 10 nA at 150 °C for:

PESD12V52UT; VRWM =12V.

PESD15VS2UT; VRWM =15V.

PESD24VS2UT; VRWM =24V.

(1) PESD3V3S2UT; VRWM = 3.3 V.

PESD5V2S2UT; VRWM =5V.

2004 Apr 15 9

Philips Semiconductors Product speciﬁcation

Double ESD protection diodes

in SOT23 package PESDxS2UT series

001aaa492

450 Ω

50 Ω

Note 1: IEC61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

D.U.T.: PESDxS2UT

RG 223/U

50 Ω coax

ESD TESTER 4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 20 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 10 V/div

horizontal scale = 50 ns/div

GND

unclamped +1 kV ESD voltage waveform

(IEC61000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC61000-4-2 network)

GND

unclamped −1 kV ESD voltage waveform

(IEC61000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC61000-4-2 network)

note 1

PESD24VS2UT

PESD15VS2UT

PESD12VS2UT

PESD5V2S2UT

PESD3V3S2UT

Fig.9 ESD clamping test set-up and waveforms.

2004 Apr 15 10

Philips Semiconductors Product speciﬁcation

Double ESD protection diodes

in SOT23 package PESDxS2UT series

APPLICATION INFORMATION

The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by

ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal

polarities are below ground. PESDxS2UT series provide a surge capability of up to 330 W (Ppp) per line for an 8/20 µs

waveform.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The

following guidelines are recommended:

•Place the PESDxS2UT as close as possible to the input terminal or connector.

•The path length between the PESDxS2UT and the protected line should be minimized.

•Keep parallel signal paths to a minimum.

•Avoid running protected conductors in parallel with unprotected conductors.

•Minimize all printed-circuit board conductive loops including power and ground loops.

•Minimize the length of transient return paths to ground.

•Avoid using shared return paths to a common ground point.

•Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias.

001aaa491

PESDxS2UT

line 1 to be protected

unidirectional protection

of two lines bidirectional protection

of one line

line 2 to be protected

ground

PESDxS2UT

line 1 to be protected

ground

Fig.10 Typical application: ESD protection of data lines.

2004 Apr 15 11

Philips Semiconductors Product speciﬁcation

Double ESD protection diodes

in SOT23 package PESDxS2UT series

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

2004 Apr 15 12

Philips Semiconductors Product speciﬁcation

Double ESD protection diodes

in SOT23 package PESDxS2UT series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratany other conditions abovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomers usingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

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reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

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Printed in The Netherlands R76/03/pp13 Date of release: 2004 Apr 15 Document order number: 9397 750 12823