BUZ 73AL SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * Logic Level Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Pb-free BUZ 73 AL 200 V 5.5 A 0.6 PG-TO220-3 Yes S Maximum Ratings Parameter Symbol Continuous drain current ID TC = 37 C Values Unit A 5.5 Pulsed drain current IDpuls TC = 25 C 22 Avalanche current,limited by Tjmax IAR 7 Avalanche energy,periodic limited by Tjmax E AR 6.5 Avalanche energy, single pulse E AS mJ ID = 7 A, VDD = 50 V, RGS = 25 L = 3.67 mH, Tj = 25 C 120 Gate source voltage VGS ESD-Sensitivity HBM as per MIL-STD 883 20 Class 1 Power dissipation Ptot TC = 25 C W 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 3.1 Thermal resistance, chip to ambient RthJA 75 C K/W E DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Rev. 2.3 V 55 / 150 / 56 Page 1 2009-04-01 BUZ 73AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V (BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 200 - - V GS(th) V GS=VDS, ID = 1 mA Zero gate voltage drain current V 1.2 1.6 2 IDSS A VDS = 200 V, V GS = 0 V, Tj = 25 C - 0.1 1 VDS = 200 V, V GS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS V GS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) V GS = 5 V, ID = 3.5 A Rev. 2.3 nA - Page 2 0.5 0.6 2009-04-01 BUZ 73AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 3.5 A Input capacitance 5 pF - 630 840 - 120 200 - 60 90 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 6.5 Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S td(on) ns V DD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Rise time - 15 20 - 60 90 - 100 130 - 40 50 tr V DD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Turn-off delay time td(off) V DD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Fall time tf V DD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Rev. 2.3 Page 3 2009-04-01 BUZ 73AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS A TC = 25 C Inverse diode direct current,pulsed - 22 V 1.1 1.7 trr ns - 140 - Qrr V R = 100 V, IF=lS, diF/dt = 100 A/s Rev. 2.3 - - V R = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge 5.5 V SD VGS = 0 V, IF = 14 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage - C - Page 4 0.7 - 2009-04-01 BUZ 73AL Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 5 V 45 6.0 A W 5.0 Ptot ID 35 30 4.5 4.0 3.5 25 3.0 20 2.5 15 2.0 1.5 10 1.0 5 0.5 0 0 0.0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 TC C 160 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 2 10 1 K/W A t = 24.0s p D ID 10 0 /I 100 s DS (o n) =V DS 10 1 ZthJC R 10 -1 1 ms D = 0.50 0.20 10 0 0.10 10 ms 0.05 10 -2 0.02 0.01 single pulse DC 10 -1 10 0 10 1 10 2 10 -3 -7 10 V VDS Rev. 2.3 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 0 tp Page 5 2009-04-01 BUZ 73AL Typ. output characteristics ID = (VDS) parameter: tp = 80 s 13 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 1.8 Ptot = 40W l kjihg fe A ID VGS [V] a 2.0 10 b 9 8 7 c 6 5 4 3 RDS (on) 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 5.5 i 6.0 j 7.0 k 8.0 l 10.0 1.4 1.2 1.0 0.8 c 0.6 i g ke fjdh 0.4 b 2 0.2 1 a 0 0 2 4 6 8 10 12 b d 11 a V VGS [V] = 0.0 0.0 16 a 2.0 2.5 b 3.0 1.0 c 3.5 d 4.0 2.0 f e 4.5 5.0 3.0 g 5.5 4.0 i h 6.0 7.0 5.0 j 8.0 k 10.0 6.0 VDS A 7.5 ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, VDS2 x ID x RDS(on)max V DS2 x ID x RDS(on)max 18 12 S A 10 ID gfs 14 12 9 8 7 10 6 8 5 6 4 3 4 2 2 1 0 0 0 1 2 3 4 5 6 7 8 V 10 0 VGS Rev. 2.3 2 4 6 8 10 12 A 15 ID Page 6 2009-04-01 BUZ 73AL Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 3.5 A, VGS = 5 V Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 1.9 4.6 V 1.6 4.0 RDS (on) VGS(th) 3.6 1.4 3.2 1.2 2.8 1.0 2.4 98% 98% 0.8 2.0 typ typ 1.6 0.6 2% 1.2 0.4 0.8 0.2 0.4 0.0 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 Tj C 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 2 pF A IF C 10 3 10 1 Ciss 10 2 10 0 Coss Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 25 30 V 40 10 -1 0.0 Rev. 2.3 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS Page 7 2009-04-01 BUZ 73AL Avalanche energy EAS = (Tj) parameter: ID = 7 A, VDD = 50 V RGS = 25 , L = 3.67 mH Typ. gate charge VGS = (QGate) parameter: ID puls = 63 A 130 16 mJ V 110 EAS VGS 100 12 90 0,8 V DS max 0,2 VDS max 10 80 70 8 60 50 6 40 4 30 20 2 10 0 20 0 40 60 80 100 120 C 160 0 Tj 10 20 30 40 50 60 70 80 nC 100 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 C 160 Tj Rev. 2.3 Page 8 2009-04-01 BUZ 73AL BUZ 73AL