BAT46W-V - Vishay Siliconix

BAT46W-V

Document Number 85663

Rev. 1.3, 21-Nov-06

Vishay Semiconductors

www.vishay.com

17431

Small Signal Schottky Diode

Features

• For general purpose applications

• This diode features very low turn-on volt-

age and fast switching.

• This device is protected by a PN junction

guard ring against excessive voltage, such as

electrostatic discharges.

• This diode is also available in the DO35 case with

the type designation BAT46 and in the MiniMELF

case with the type designation LL46.

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Mechanical Data

Case: SOD123 Plastic case

Weight: approx. 10.3 mg

Packaging Codes/Options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box

GS08/3 k per 7" reel (8 mm tape), 15 k/box

Parts Table

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

1) Valid provided that electrodes are kept at ambient temperature

Part Ordering code Type Marking Remarks

BAT46W-V BAT46W-V-GS18 or BAT46W-V-GS08 L6 Tape and Reel

Parameter Test condition Symbol Value Unit

Repetitive peak reverse voltage VRRM 100 V

Forward continuous current Tamb = 25 °C IF1501) mA

Repetitive peak forward current tp < 1 s, δ < 0.5, Tamb = 25 °C IFRM 3501) mA

Surge forward current tp < 10 ms, Tamb = 25 °C IFSM 7501) mA

Power dissipation1) Tamb = 65 °C Ptot 1501) mW

www.vishay.com

Document Number 85663

Rev. 1.3, 21-Nov-06

BAT46W-V

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

1) Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

2) Pulse test tp < 300 µs, δ < 2 %

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter Test condition Symbol Value Unit

Thermal resistance junction to ambient air RthJA 3001) K/W

Junction temperature Tj125 °C

Ambient operating temperature range Tamb - 55 to + 125 °C

Storage temperature range Tstg - 55 to + 150 °C

Parameter Test condition Symbol Min Typ. Max Unit

Reverse breakdown voltage IR = 100 µA (pulsed) V(BR) 100 V

Leakage current2) VR = 1.5 V IR0.5 µA

VR = 1.5 V, Tj = 60 °C IR5µA

VR = 10 V IR0.8 µA

VR = 10 V, Tj = 60 °C IR7.5 µA

VR = 50 V IR2µA

VR = 50 V, Tj = 60 °C IR15 µA

VR = 75 V IR5µA

VR = 75 V, Tj = 60 °C IR20 µA

Forward voltage2) IF = 0.1 mA VF250 mV

IF = 10 mA VF450 mV

IF = 250 mA VF1000 mV

Diode capacitance VR = 0 V, f = 1 MHz CD10 pF

VR = 1 V, f = 1 MHz CD6pF

Figure 1. Typical Instantaneous Forward Characteristics

I - Forward Current (mA)

1000

100

0.1

0.01 1.2 1 0.8 0.6 0.4 0.2 0

18546 V

- Forward Voltage (V)

= 60 °CT

25 °C

Figure 2. Typical Reverse Characteristics

18547

I - Reverse Leakage Current (µA)

0.01

0.1

100

020406080100

- Reverse Voltage (V)

= 60 °C

= 25 °C

BAT46W-V

Document Number 85663

Rev. 1.3, 21-Nov-06

Vishay Semiconductors

www.vishay.com

Package Dimensions in mm (Inches): SOD123

Figure 3. Admissible Power Dissipation vs. Ambient Temperature

200

18548

Tamb- Ambient Temperature (°C)

250

200

150

100

50 100 1500

P - Power Dissipation (mW)

tot

17432

www.vishay.com

Document Number 85663

Rev. 1.3, 21-Nov-06

VISHAY

BAT46W-V

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com

Revision: 08-Apr-05 1

Notice

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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

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