71598HA (KT)/10996TS (KOTO) 8-8491/5197TA, TS No.2089-1/4
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP/NPN Epitaxial Planar Silicon Transistors
160V/140mA Switching Applications
Ordering number:EN2089B
2SA1477/2SC3787
( ) : 2SA1477
Specifications
Absolute Maximum Ratings at Ta = 25ËšC
Electrical Characteristics at Ta = 25ËšC
Package Dimensions
unit:mm
2042B [2SA1477/2SC3787]
Applications
· Predrivers for 100W power amplifiers.
Features
· Adoption of FBET process.
· Excellent linearity of hFE.
· Small Cob.
· Plastic-convered heat sink facilitating high-density
mounting (TO-126ML package).
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 081)–(V
egatloVrettimE-ot-rotcelloCV
OEC 061)–(V
egatloVesaB-ot-rettimEV
OBE 5)–(V
tnerruCrotcelloCI
C041)–(Am
tnerruCrotcelloCkaePI
PC 002)–(Am
noitapissiDrotcelloCP
C3.1W
01W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Tc=25ËšC ËšC
ËšC
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V021)–(= E0=001)–(An
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=001)–(An
niaGtnerruCCDh
EF VEC I,V5)–(= CAm01)–(=001004
tcudorPhtdiwdnaB-niaGf
TVEC I,V01)–(= CAm01)–(=051zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(= )0.4(Fp
0.3Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am05)–(= BAm5)–(= )041–()004–(Vm
07003Vm
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,Am05)–(= BAm5)–(=2.1V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)–(= E0=081)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞061)–(V
egatoVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C0=5)–(V
emiTesiRt
no tiucriCtseTdeificepseeS1.0sµ
emiTegarotSt
gts tiucriCtseTdeificepseeS5.0sµ
emiTllaFt
ftiucriCtseTdeificepseeS1.0sµ
*: The 2SA1477/2SC3787 are classified by 10mA hFE as follows :
002R001082S041004T002