IXTR140P10T - Zilog - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C -100 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ-100 V

VGSS Continuous ±15 V

VGSM Transient ±25 V

ID25 TC= 25°C - 110 A

IDM TC= 25°C, Pulse Width Limited by TJM - 400 A

IATC= 25°C -140 A

EAS TC= 25°C 2.5 J

dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns

PDTC= 25°C 270 W

TJ- 55 ... +150 °C

TJM 150 °C

Tstg - 55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

VISOL 50/60 Hz, 1 Minute 2500 V~

FCMounting Force 20..120/4.5..27 N/lb.

Weight 5 g

DS100376B(01/13)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = - 250μA -100 V

VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V

IGSS VGS = ±15V, VDS = 0V ±100 nA

IDSS VDS = VDSS, VGS = 0V - 10 μA

TJ = 125°C -150 μA

RDS(on) VGS = -10V, ID = - 70A, Note 1 11 mΩ

TrenchPTM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTR140P10T VDSS = -100V

ID25 = - 110A

RDS(on) ≤≤

≤≤

≤ 11mΩΩ

ΩΩ

Ω

Features

zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

zIsolated Mounting Surface

z2500V~ Electrical Isolation

z Avalanche Rated

zExtended FBSOA

zFast Intrinsic Diode

z Low RDS(ON) and QG

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zHigh-Side Switching

zPush Pull Amplifiers

zDC Choppers

zAutomatic Test Equipment

zCurrent Regulators

zBattery Charger Applications

G = Gate D = Drain

S = Source

ISOPLUS247

E153432

G

S

DIsolated Tab

IXTR140P10T

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = -10V, ID = - 70A, Note 1 70 115 S

Ciss 32.8 nF

Coss VGS = 0V, VDS = - 25V, f = 1MHz 2290 pF

Crss 700 pF

td(on) 58 ns

tr 26 ns

td(off) 86 ns

tf 26 ns

Qg(on) 400 nC

Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = - 70A 125 nC

Qgd 100 nC

RthJC 0.46 °C/W

RthCS 0.15 °C/W

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times

VGS = -10V, VDS = 0.5 • VDSS, ID = - 70A

RG = 1Ω (External)

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V -140 A

ISM Repetitive, Pulse Width Limited by TJM - 560 A

VSD IF = -100A, VGS = 0V, Note 1 -1.4 V

trr 130 ns

QRM 650 nC

IRM -10 A

IF = - 70A, -di/dt = -100A/μs

VR = -100V, VGS = 0V

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

1 = Gate

2,4 = Drain

3 = Source

ISOPLUS247 (IXTR) Outline

IXTR140P10T

Fi g. 6. Maximu m Dr ain C urrent vs.

Case Temperature

-120

-100

-80

-60

-40

-20

0

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fi g . 1. Ou tp u t C h ar ac ter i sti cs @ T

J

= 25ºC

-140

-120

-100

-80

-60

-40

-20

0

-1.4-1.2-1-0.8-0.6-0.4-0.20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 8V

- 7V

- 5

V

- 6

V

Fi g . 2. Exten d ed Outp u t Charac ter i stics @ T

J

= 25ºC

-900

-800

-700

-600

-500

-400

-300

-200

-100

0

-50-40-30-20-100

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 5

V

- 6

V

- 7

V

- 8

V

Fi g . 3. Ou tp u t C h ar ac ter i sti cs @ T

J

= 125º C

-140

-120

-100

-80

-60

-40

-20

0

-2.4-2-1.6-1.2-0.8-0.40

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 8V

- 7V

- 4V

- 5V

- 6V

Fig. 4. R

DS(on)

Normalized to I

D

= - 70A Valu e vs.

Junction T emperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= -10V

I

D

= - 140A

I

D

= - 70A

Fig. 5. R

DS(on)

No r mal i z ed to I

D

= - 70A Valu e vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-350-300-250-200-150-100-500

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= -10V

T

J

= 25ºC

T

J

= 125ºC

IXTR140P10T

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fi g . 12 . For war d - B i as Saf e Op er ating Area

1

10

100

1,000

110100

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

1ms

100µs

R

DS(on)

Limit

10ms

DC

-

--

-

100ms

25µs

Fi g . 7. I n p u t Admittan ce

-200

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

-6.2-5.8-5.4-5-4.6-4.2-3.8-3.4

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

120

140

160

180

200

-200-180-160-140-120-100-80-60-40-200

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-350

-300

-250

-200

-150

-100

-50

0

-1.5-1.4-1.3-1.2-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4-0.3

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

0 50 100 150 200 250 300 350 400

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= - 50V

I

D

= - 70A

I

G

= -1mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

-40-35-30-25-20-15-10-50

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MH

z

Ciss

Crss

Coss

IXTR140P10T

Fig. 14. Resistive Turn-on Rise Time vs.

Drain Current

10

20

30

40

50

-140-130-120-110-100-90-80-70-60-50

I

D

- Amperes

t

r

- Nanoseconds

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 50V

T

J

= 25ºC

T

J

= 125ºC

Fig. 15. R esistive Turn-o n Switchi n g Ti mes vs.

Gate Resistance

40

60

80

100

120

140

160

180

200

12345678910

R

G

- Ohms

t

r

- Nanoseconds

0

40

80

120

160

200

240

280

320

t d

(

on

)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= -10V

V

DS

= - 50V

I

D

= -140A

I

D

= - 70A

Fi g. 16. R esi stive Tur n-o ff Switchi n g Times vs.

Junctio n Temperature

15

20

25

30

35

40

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

40

60

80

100

120

140

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 50V

I

D

= - 140A

I

D

= - 70A

I

D

= - 70A

Fi g . 17. R esisti ve Turn-off Switching Ti mes vs.

Drain Current

40

60

80

100

120

140

-140-130-120-110-100-90-80-70-60-50

I

D

- Amperes

t

f

- Nanoseconds

22

24

26

28

30

32

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 50V

T

J

= 125ºC

T

J

= 25ºC

Fi g . 13 . R esi s ti ve Tu r n-on R i se Ti me vs.

Junction Temp eratur e

10

20

30

40

50

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 50V

I

D

= - 70A

I

D

= -140A

Fi g . 18. R esisti ve Turn-off Switching Ti mes vs.

Gate Resista n c e

0

20

40

60

80

100

120

140

160

180

12345678910

R

G

- Ohms

t

f

- Nanoseconds

0

40

80

120

160

200

240

280

320

360

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= -10V

V

DS

= - 50V

I

D

= -140A

I

D

= - 70A

IXTR140P10T

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: T_140P10T(A8-P10) 1-09-13

Fi g . 19. Maximu m Tran si ent Th er mal I mpedan ce

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W