CAT24C44LI-TE13 - Catalyst Semiconductor, Inc.

Characteristics subject to change without notice 1

CAT24C44

256-Bit Serial Nonvolatile CMOS Static RAM

Doc. No. 1083, Rev. R

FEATURES

■Single 5V Supply

■Infinite EEPROM to RAM Recall

■CMOS and TTL Compatible I/O

■Low CMOS Power Consumption:

–Active: 3 mA Max.

–Standby: 30 µA Max.

■Power Up/Down Protection

■10 Year Data Retention

■JEDEC Standard Pinouts:

–8-pin DIP

–8-pin SOIC

■100,000 Program/Erase Cycles (EEPROM)

■Auto Recall on Power-up

■Commercial, Industrial and Automotive

Temperature Ranges

■"Green" Package Options Available

DESCRIPTION

The CAT24C44 Serial NVRAM is a 256-bit nonvolatile

memory organized as 16 words x 16 bits. The high

speed Static RAM array is bit for bit backed up by a

nonvolatile EEPROM array which allows for easy trans-

fer of data from RAM array to EEPROM (STORE) and

from EEPROM to RAM (RECALL). STORE operations

are completed in 10ms max. and RECALL operations

typically within 1.5µs. The CAT24C44 features unlim-

ited RAM write operations either through external RAM

writes or internal recalls from EEPROM. Internal false

PIN CONFIGURATION

store protection circuitry prohibits STORE operations

when VCC is less than 3.5V (typical) ensuring EEPROM

data integrity.

The CAT24C44 is manufactured using Catalyst’s ad-

vanced CMOS floating gate technology. It is designed to

endure 100,000 program/erase cycles (EEPROM) and

has a data retention of 10 years. The device is available

in JEDEC approved 8-pin plastic DIP and SOIC pack-

ages.

PIN FUNCTIONS

Pin Name Function

SK Serial Clock

DI Serial Input

DO Serial Data Output

CE Chip Enable

RECALL Recall

STORE Store

VCC +5V

VSS Ground

SOIC Package (S, V, GV)

SK RECALL

VSS

VCC

STORE

VCC

RECALL

VSS

STORE

DIP Package (P, L, GL)

CAT24C44

Characteristics subject to change without notice

POWER-UP TIMING(4)

Symbol Parameter Min. Max. Units

VCCSR VCC Slew Rate 0.5 0.005 V/m

tpur Power-Up to Read Operations 200 µs

tpuw Power-Up to Write or Store Operation 5 ms

MODE SELECTION(1)(2)

Software Write Enable Previous Recall

Mode STORESTORE

STORESTORE

STORE RECALLRECALL

RECALLRECALL

RECALL Instruction Latch Latch

Hardware Recall(3) 1 0 NOP X X

Software Recall 1 1 RCL X X

Hardware Store(3) 0 1 NOP SET TRUE

Software Store 1 1 STO SET TRUE

X = Don’t Care

BLOCK DIAGRAM

ROW

DECODE

INSTRUCTION

DECODE

EEPROM ARRAY

STORE

RECAL

STATIC RAM

ARRAY

256-BIT

STORE

RECALL

INSTRUCTION

DECODE 4-BIT

COUNTER

CONTROL

LOGIC

VCC

VSS

Note:

(1) The store operation has priority over all the other operations.

(2) The store operation is inhibited when VCC is below ≈ 3.5V.

(3) NOP designates that the device is not currently executing an instruction.

(4) This parameter is tested initially and after a design or process change that affects the parameter.

CAT24C44

3Doc. No. 1083, Rev. R

Characteristics subject to change without notice

ABSOLUTE MAXIMUM RATINGS*

Temperature Under Bias ................. –55°C to +125°C

Storage Temperature....................... –65°C to +150°C

Voltage on Any Pin with

Respect to Ground(2) .............–2.0 to +VCC +2.0V

VCC with Respect to Ground ............... –2.0V to +7.0V

Package Power Dissipation

Capability (Ta = 25°C)................................... 1.0W

Lead Soldering Temperature (10 secs) ............ 300°C

Output Short Circuit Current(3) ........................ 100 mA

*COMMENT

Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device.

These are stress ratings only, and functional operation

of the device at these or any other conditions outside of

those listed in the operational sections of this specifica-

tion is not implied. Exposure to any absolute maximum

rating for extended periods may affect device perfor-

mance and reliability.

Note:

(1) These parameter are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100

and JEDEC test methods.

(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns.

Maximum DC voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.

(3) Output shorted for no more than one second. No more than one output shorted at a time.

(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.

CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V

Symbol Parameter Max. Unit Conditions

CI/O(1) Input/Output Capacitance 10 pF VI/O = 0V

CIN(1) Input Capacitance 6 pF VIN = 0V

D.C. OPERATING CHARACTERISTICS

VCC = 5V ±10%, unless otherwise specified.

Limits

Symbol Parameter Min. Typ. Max. Unit Conditions

ICCO Current Consumption (Operating) 3 mA Inputs = 5.5V, TA = 0°C

All Outputs Unloaded

ISB Current Consumption (Standby) 30 µA CE = VIL

ILI Input Current 2 µA0 ≤ VIN ≤ 5.5V

ILO Output Leakage Current 10 µA0 ≤ VOUT ≤ 5.5V

VIH High Level Input Voltage 2 VCC V

VIL Low Level Input Voltage 0 0.8 V

VOH High Level Output Voltage 2.4 V IOH = –2mA

VOL Low Level Output Voltage 0.4 V IOL = 4.2mA

RELIABILITY CHARACTERISTICS

Symbol Parameter Min. Typ. Max. Units

NEND(1) Endurance 100,000 Cycles/Byte

TDR(1) Data Retention 10 Years

VZAP(1) ESD Susceptibility 2000 Volts

ILTH(1)(4) Latch-up 100 mA

CAT24C44

Characteristics subject to change without notice

A.C. CHARACTERISTICS

VCC = 5V ±10%, unless otherwise specified.

Symbol Parameter Min. Max. Units Conditions

FSK SK Frequency DC 1 MHz

tSKH SK Positive Pulse Width 400 ns

tSKL SK Negative Pulse Width 400 ns CL = 100pF + 1TTL gate

tDS Data Setup Time 400 ns VOH = 2.2V, VOL = 0.65V

tDH Data Hold Time 80 ns VIH = 2.2V, VIL = 0.65V

tPD SK Data Valid Time 375 ns Input rise and fall times = 10ns

tZCE Disable Time 1 µs

tCES CE Enable Setup Time 800 ns

tCEH CE Enable Hold Time 400 ns

tCDS CE De-Select Time 800 ns

A.C. CHARACTERISTICS, Store Cycle

VCC = 5V ±10%, unless otherwise specified.

Limits

Symbol Parameter Min. Max. Units Conditions

tST Store Time 10 ms CL = 100pF + 1TTL gate

tSTP Store Pulse Width 200 ns VOH = 2.2V, VOL = 0.65V

tSTZ Store Disable Time 100 ns VIH = 2.2V, VIL = 0.65V

A.C. CHARACTERISTICS, Recall Cycle

VCC = 5V ±10%, unless otherwise specified.

Symbol Parameter Min. Max. Units Conditions

tRCC Recall Cycle Time 2.5 µs

tRCP Recall Pulse Width 500 ns CL = 100pF + 1TTL gate

tRCZ Recall Disable Time 500 ns VOH = 2.2V, VOL = 0.65V

tORC Recall Enable Time 10 ns VIH = 2.2V, VIL = 0.65V

tARC Recall Data Access Time 1.5 µs

INSTRUCTION SET

Format

Instruction Start Bit Address OP Code Operation

WRDS 1 XXXX 0 0 0 Reset Write Enable Latch (Disables, Writes and Stores)

STO 1 XXXX 0 0 1 Store RAM Data in EEPROM

WRITE 1 AAAA 0 1 1 Write Data into RAM Address AAAA

WREN 1 XXXX 1 0 0 Set Write Enable Latch (Enables, Writes and Stores)

RCL 1 XXXX 1 0 1 Recall EEPROM Data into RAM

READ 1 AAAA 1 1 X Read Data From RAM Address AAAA

X = Don’t care

A = Address bit

CAT24C44

5Doc. No. 1083, Rev. R

Characteristics subject to change without notice

DEVICE OPERATION

The CAT24C44 is intended for use with standard micro-

processors. The CAT24C44 is organized as 16 registers

by 16 bits. Seven 8-bit instructions control the device’s

operating modes, the RAM reading and writing, and the

EEPROM storing and recalling. It is also possible to

control the EEPROM store and recall functions in hard-

ware with the STORE and RECALL pins. The CAT24C44

operates on a single 5V supply and will generate, on

chip, the high voltage required during a RAM to EEPROM

storing operation.

Instructions, addresses and write data are clocked into

the DI pin on the rising edge of the clock (SK). The DO

pin remains in a high impedance state except when

outputting data from the device. The CE (Chip Enable)

pin must remain high during the entire data transfer.

The format for all instructions sent to the CAT24C44 is

a logical ‘1’ start bit, 4 address bits (data read or write

operations) or 4 “Don’t Care” bits (device mode opera-

tions), and a 3-bit op code (see Instruction Set). For data

write operations, the 8-bit instruction is followed by 16

bits of data. For data read instructions, DO will come out

of the high impedance state and enable 16 bits of data

to be clocked from the device. The 8th bit of the read

instruction is a “Don’t Care” bit. This is to eliminate any

bus contention that would occur in applications where

the DI and DO pins are tied together to form a common

DI/DO line. A word of caution while clocking data to and

from the device: If the CE pin is prematurely deselected

while shifting in an instruction, that instruction will not be

executed, and the shift register internal to the CAT24C44

will be cleared. If there are more than or less than 16

clocks during a memory data transfer, an improper data

transfer will result. The SK clock is completely static

allowing the user to stop the clock and restart it to

resume shifting of data.

Read

Upon receiving a start bit, 4 address bits, and the 3-bit

read command (clocked into the DI pin), the DO pin of

the CAT24C44 will come out of the high impedance state

and the 16 bits of data, located at the address specified

in the instructions, will be clocked out of the device.

When clocking data from the device, the first bit clocked

out (DO) is timed from the falling edge of the 8th clock,

all succeeding bits (D1–D15) are timed from the rising

edge of the clock.

Write

After receiving a start bit, 4 address bits, and the 3-bit

WRITE command, the 16-bit word is clocked into the

device for storage into the RAM memory location speci-

fied. The CE pin must remain high during the entire write

operation.

Figure 1. RAM Read Cycle Timing

Note:

(1) Bit 8 of READ instruction is “Don’t Care”.

Figure 2. RAM Write Cycle Timing

DI D0

123456789101112 222324

1D1D2D3D13 D14 D15

A11AAA 0

DO HIGH-Z D0

123456789101112 222324

D1D2D3D14 D15 D0

AX11AAA (8)

(1)

CAT24C44

Characteristics subject to change without notice

WREN/WRDS

The CAT24C44 powers up in the program disable state

(the “write enable latch” is reset). Any programming after

power-up or after a WRDS (RAM write/EEPROM store

disable) instruction must first be preceded by the WREN

(RAM write/EEPROM store enable) instruction. Once

writing/storing is enabled, it will remain enabled until

power to the device is removed, the WRDS instruction is

sent, or an EEPROM store has been executed (STO).

Figure 4. Write Cycle Timing

Figure 3. Read Cycle Timing

x12n

tSKL

tSKH

1/FSK

tCEH

tDH

tDS

tCES tCDS

HIGH-Z

tPD

67891011

tPD tZ

VIH

HIGH-Z

SK CYCLE #

DO D0 D1 Dn

The WRDS (write/store disable) can be used to disable

all CAT24C44 programming functions, and will prevent

any accidental writing to the RAM, or storing to the

EEPROM.

Data can be read normally from the CAT24C44 regard-

less of the “write enable latch” status.

CAT24C44

7Doc. No. 1083, Rev. R

Characteristics subject to change without notice

RCL/RECALLRECALL

RECALLRECALL

RECALL

Data is transferred from the EEPROM data memory to

RAM by either sending the RCL instruction or by pulling

the RECALL input pin low. A recall operation must be

performed before the EEPROM store, or RAM write

operations can be executed. Either a hardware or soft-

ware recall operation will set the “previous recall” latch

internal to the CAT24C44.

POWER-ON RECALL

The CAT24C44 has a power-on recall function that

transfers the EEPROM data to the RAM. After Power-

up, all functions are inhibited for at least 200ns (Tpur)

from stable Vcc.

STO/STORESTORE

STORESTORE

STORE

Data in the RAM memory area is stored in the EEPROM

memory either by sending the STO instruction or by

pulling the STORE input pin low. As security against any

inadvertent store operations, the following conditions

must each be met before data can be transferred into

nonvolatile storage:

•The “previous recall” latch must be set (either a

software or hardware recall operation).

•The “write enable” latch must be set (WREN

instruction issued).

•STO instruction issued or STORE input low.

During the store operation, all other CAT24C44 func-

tions are inhibited. Upon completion of the store opera-

tion, the “write enable” latch is reset. The device also

provides false store protection whenever VCC falls below

a 3.5V level. If VCC falls below this level, the store

operation is disabled and the “write enable” latch is

reset.

Figure 6. Hardware Store Cycle Timing

Figure 5. Recall Cycle Timing

RECALL

tRCZ

tORC

tRCC

tRCP

tARC

VALID DATA

UNDEFINED DATA

DO HIGH-Z

STORE

tST

tSTP

tSTZ HIGH-Z

CAT24C44

Characteristics subject to change without notice

Figure 7. Non-Data Operations

12345678

1XXXX

OP-CODE

ORDERING INFORMATION

Notes:

(1) The device used in the above example is a CAT24C44SI-TE13 (SOIC, Industrial Temperature, Tape & Reel)

Prefix Device # Suffix

24C44 S I -TE13

Product

Number Tape & Reel

Package

P: PDIP

S: SOIC, JEDEC

L: PDIP (Lead-free, Halogen-free)

V: SOIC, JEDEC (Lead-free, Halogen-free)

GL: PDIP (Lead-free, Halogen-free, NiPdAu lead plating)

GV: SOIC, JEDEC (Lead-free, Halogen-free, NiPdAu lead plating)

CAT

Temperature Range

Blank = Commercial (0˚C to 70˚C)

I = Industrial (-40˚C to 85˚C)

A = Automotive (-40˚C to 105˚C)

E = Extended (-40˚C to 125˚C)

Optional

Company ID

Catalyst Semiconductor, Inc.

Corporate Headquarters

1250 Borregas Avenue

Sunnyvale, CA 94089

Phone: 408.542.1000

Fax: 408.542.1200

www.caalyst-semiconductor.com

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issued to Catalyst Semiconductor contact the Company’s corporate office at 408.542.1000.

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PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE

RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING

OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES.

Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or

other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a

situation where personal injury or death may occur.

Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets

labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale.

Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate

typical semiconductor applications and may not be complete.

REVISION HISTORY

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Publication #: 1083

Revison: R

Issue date: 08/03/05