To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
August 2014
FDA16N50LDTU — N-Channel UniFETTM MOSFET
©2011 Fairchild Semiconductor Corporation
FDA16N50LDTU Rev. C0
www.fairchildsemi.com
1
FDA16N50LDTU
N-Channel UniFETTM MOSFET
500 V, 16.5 A, 380 mΩ
Features
•R
DS(on) = 310 mΩ (Typ.) @ VGS = 10 V, ID = 8.3 A
• Low Gate Charge (Typ. 32 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
•PDP TV
• Uninterruptible Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
TO-3PN
GDS
G
S
D
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDA16N50LDTU Unit
VDSS Drain to Source Voltage 500 V
VGSS Gate to Source Voltage ±30 V
IDDrain Current - Continuous (TC = 25oC) 16.5 A
- Continuous (TC = 100oC) 9.9
IDM Drain Current - Pulsed (Note 1) 66 A
EAS Single Pulsed Avalanche Energy (Note 2) 780 mJ
IAR Avalanche Current (Note 1) 16.5 A
EAR Repetitive Avalanche Energy (Note 1) 20.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25oC) 205 W
- Derate Above 25oC2.1W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FDA16N50LDTU Unit
RθJC Thermal Resistance, Junction to Case, Max. 0.6 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max. 40
(L-forming)
FDA16N50LDTU — N-Channel UniFETTM MOSFET
©2011 Fairchild Semiconductor Corporation
FDA16N50LDTU Rev. C0
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDA16N50LDTU FDA16N50 TO-3PN
(L-forming) Tube N/A N/A 30 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V, TJ = 25oC 500 - - V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25oC - 0.50 - V/oC
IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V - - 20 μA
VDS = 500 V, TC = 125oC - - 200
IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA3.0-5.0V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 8.3 A - 0.31 0.38 Ω
gFS Forward Transconductance VDS = 40 V, ID = 8.3 A - 23 - S
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1 MHz
- 1495 1945 pF
Coss Output Capacitance - 235 310 pF
Crss Reverse Transfer Capacitance - 20 30 pF
Qg(tot) Total Gate Charge at 10V VDS = 400 V, ID = 16 A,
VGS = 10 V
(Note 4)
-3245nC
Qgs Gate to Source Gate Charge - 8.5 - nC
Qgd Gate to Drain “Miller” Charge - 14 - nC
td(on) Turn-On Delay Time
VDD = 250 V, ID = 16 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
-4090ns
trTurn-On Rise Time - 150 310 ns
td(off) Turn-Off Delay Time - 65 140 ns
tfTurn-Off Fall Time - 80 170 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 16.5 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 66 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 16.5 A - - 1.4 V
trr Reverse Recovery Time VGS = 0 V, ISD = 16 A,
dIF/dt = 100 A/μs
- 490 - ns
Qrr Reverse Recovery Charge - 5.0 - μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 5.1 mH, IAS = 16.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 16.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical Characteristics
FDA16N50LDTU — N-Channel UniFETTM MOSFET
©2011 Fairchild Semiconductor Corporation
FDA16N50LDTU Rev. C0
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 100101
10-1
100
101
102 VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
24681012
100
101150oC
25oC
-55oC
* Notes :
1. VDS = 40V
2. 250μs Pulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
0 5 10 15 20 25 30 35 40
0.2
0.3
0.4
0.5
0.6
VGS = 20V
VGS = 10V
* Note : TJ = 25oC
RDS(ON) [Ω], Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
100
101
150oC
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
25oC
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
10-1 100101
0
1000
2000
3000
4000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 10203040
0
2
4
6
8
10
12
VDS = 250V
VDS = 100V
VDS = 400V
* Note : ID = 16A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
FDA16N50LDTU — N-Channel UniFETTM MOSFET
©2011 Fairchild Semiconductor Corporation
FDA16N50LDTU Rev. C0
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. VGS = 10 V
2. ID = 8.3 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. VGS = 0 V
2. ID
= 250 μA
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
25 50 75 100 125 150
0
5
10
15
20
ID, Drain Current [A]
TC, Case Temperature [oC]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
* Notes :
1. ZθJC(t) = 0.6 oC/W Max.
2. Duty F a ctor, D =t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC(t), Thermal Response
t1, Square W ave Pulse Duration [sec]
t
1
P
DM
t
2
t1, Rectangular Pulse Duration [sec]
ZθJC(t), Thermal Response [oC/W]
FDA16N50LDTU — N-Channel UniFETTM MOSFET
©2011 Fairchild Semiconductor Corporation
FDA16N50LDTU Rev. C0
www.fairchildsemi.com
5
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
IG = const.
FDA16N50LDTU — N-Channel UniFETTM MOSFET
©2011 Fairchild Semiconductor Corporation
FDA16N50LDTU Rev. C0
www.fairchildsemi.com
6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
R
0.50
16.20
15.40
2.20
1.80 3.20
2.80
1.20
0.80
5.45 5.45
1.85
5.20
4.80
20.10
19.70 18.90
18.50
3.70
3.30
0.55
M
1.65
1.45
0.75
0.55
5.00
4.60
R
0.60
E
9.25
8.75
E
4.45
3.95
3°
3°
4°
E
5.25
4.75
13.80
13.40
16.96
16.56
3.30
3.10
7.20
6.80
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE REFERENCE EIAJ SC-65
PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E
DOES NOT COMPLY EIAJ SC-65.
F) DRAWING FILE NAME: TO3PN03CREV1.
G) FAIRCHILD SEMICONDUCTOR.
1 3
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC