1
Transistors with built-in Resistor
UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/
111D/111E/111F/111H/111L
Silicon PNP epitaxial planer transistor
For digital circuits
■Features
●Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●M type package allo wing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■Resistance by Part Number
(R1)(R
2)
●UN1111 10kΩ10kΩ
●UN1112 22kΩ22kΩ
●UN1113 47kΩ47kΩ
●UN1114 10kΩ47kΩ
●UN1115 10kΩ—
●UN1116 4.7kΩ—
●UN1117 22kΩ—
●UN1118 0.51kΩ5.1kΩ
●UN1119 1kΩ10kΩ
●UN1110 47kΩ—
●UN111D 47kΩ10kΩ
●UN111E 47kΩ22kΩ
●UN111F 4.7kΩ10kΩ
●UN111H 2.2kΩ10kΩ
●UN111L 4.7kΩ4.7kΩ
■Absolute Maximum Ratings (Ta=25˚C)
1:Base
2:Collector
3:Emitter
M Type Mold Package
Unit: mm
Internal Connection
Parameter Symbol Ratings Unit
Collector to base voltage VCBO –50 V
Collector to emitter voltage
VCEO –50 V
Collector current IC–100 mA
Total power dissipation PT400 mW
Junction temperature Tj150 ˚C
Storage temperature Tstg –55 to +150 ˚C
6.9±0.1
0.55±0.1 0.45±0.05
1.0±0.1
1.0
2.5±0.1
1.0
1.5 1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
4.1±0.2 4.5±0.1
2.5 2.5
123
BC
R1
R2
E
2
Transistors with built-in Resistor
■Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = –50V, IE = 0 – 0.1 µA
ICEO VCE = –50V, IB = 0 – 0.5 µA
UN1111 – 0.5
UN1112/1114/111E/111D – 0.2
UN1113 – 0.1
UN1115/1116/1117/1110 IEBO VEB = –6V, IC = 0 – 0.01 mA
UN111F/111H –1.0
UN1119 –1.5
UN1118/111L –2.0
Collector to base voltage VCBO IC = –10µA, IE = 0 50 V
Collector to emitter voltage VCEO IC = –2mA, IB = 0 50 V
UN1111 35
UN1112/111E 60
UN1113/1114 hFE VCE = –10V, IC = –5mA 80
UN1115*/1116*/1117*/1110*
160 460
UN111F/111D/1119/111H 30
UN1118/111L 20
Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA – 0.25 V
Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ–4.9 V
Output voltage low level VCC = –5V, VB = –2.5V, RL = 1kΩ– 0.2
UN1113 VOL VCC = –5V, VB = –3.5V, RL = 1kΩ– 0.2 V
UN111D VCC = –5V, VB = –10V, RL = 1kΩ– 0.2
UN111E VCC = –5V, VB = –6V, RL = 1kΩ– 0.2
Transition frequency fTVCB = –10V, IE = 2mA, f = 200MHz 80 MHz
UN1111/1114/1115 10
UN1112/1117 22
UN1113/1110/111D/111E 47
UN1116/111F/111L R1(–30%) 4.7 (+30%) kΩ
UN1118 0.51
UN1119 1
UN111H 2.2
UN1111/1112/1113/111L 0.8 1.0 1.2
UN1114 0.17 0.21 0.25
UN1118/1119 0.08 0.1 0.12
UN111D R1/R24.7
UN111E 2.14
UN111F 0.47
UN111H 0.17 0.22 0.27
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Resis-
tance
ratio
UN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
* hFE rank classification (UN1115/1116/1117/1110)
Rank Q R S
hFE 160 to 260 210 to 340 290 to 460
3
Transistors with built-in Resistor
Common characteristics chart
PT — Ta
Characteristics charts of UN1111
IC — VCE VCE(sat) — IChFE — IC
Cob — VCB IO — VIN VIN — IO
UN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
0
100
200
300
400
500
02040 8060 140120100 160
Ambient temperature Ta (˚C)
Total power dissipation P
T
(mW)
00 –12–2 –10–4 –8–6
–40
–120
–80
–160
–140
–100
–60
–20
Collector to emitter voltage V
CE
(V)
Collector current IC (mA)
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
40
80
120
160
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V Ta=75˚C
25˚C
–25˚C
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–
3
–0.4
–10
–30
–100
–300
–1000
–3000
–10000
–1.4–1.2–1.0–0.8–0.6
Output current I
O
(µA)
Input voltage V
IN
(V)
V
O
=–5V
Ta=25˚C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
4
Transistors with built-in Resistor
Characteristics charts of UN1112
IC — VCE VCE(sat) — IChFE — IC
Cob — VCB IO — VIN VIN — IO
Characteristics charts of UN1113
IC — VCE VCE(sat) — IChFE — IC
UN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
00 –12–2 –10–4 –8–6
–40
–120
–80
–160
–140
–100
–60
–20
Collector to emitter voltage V
CE
(V)
Collector current IC (mA)
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
100
200
300
400
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–3
–0.4
–10
–30
–100
–300
–1000
–3000
–10000
–1.4–1.2–1.0–0.8–0.6
Output current I
O
(µA)
Input voltage V
IN
(V)
V
O
=–5V
Ta=25˚C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
00 –12–2 –10–4 –8–6
–40
–120
–80
–160
–140
–100
–60
–20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
100
200
300
400
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
5
Transistors with built-in ResistorUN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
Cob — VCB IO — VIN VIN — IO
Characteristics charts of UN1114
IC — VCE VCE(sat) — IChFE — IC
Cob — VCB IO — VIN VIN — IO
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–3
–0.4
–10
–30
–100
–300
–1000
–3000
–10000
–1.4–1.2–1.0–0.8–0.6
Output current I
O
(µA)
Input voltage V
IN
(V)
V
O
=–5V
Ta=25˚C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
00 –12–2 –10–4 –8–6
–40
–120
–80
–160
–140
–100
–60
–20
Collector to emitter voltage V
CE
(V)
Collector current IC (mA)
Ta=25˚C
I
B
=–1.0mA –0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
100
200
300
400
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–3
–0.4
–10
–30
–100
–300
–1000
–3000
–10000
–1.4–1.2–1.0–0.8–0.6
Output current I
O
(µA)
Input voltage V
IN
(V)
V
O
=–5V
Ta=25˚C
–0.1
–0.3
–0.1 –0.3
–1
–3
–10
–30
–100
–300
–1000
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
6
Transistors with built-in ResistorUN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
Characteristics charts of UN1115
IC — VCE VCE(sat) — IChFE — IC
Cob — VCB IO — VIN VIN — IO
Characteristics charts of UN1116
IC — VCE VCE(sat) — IChFE — IC
00 –12–2 –10–4 –8–6
–40
–120
–80
–160
–140
–100
–60
–20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Ta=25˚C
I
B
=–1.0mA –0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C 0–1 –3
100
200
300
400
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–3
–0.4
–10
–30
–100
–300
–1000
–3000
–10000
–1.4–1.2–1.0–0.8–0.6
Output current I
O
(µA)
Input voltage V
IN
(V)
V
O
=–5V
Ta=25˚C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
00 –12–2 –10–4 –8–6
–40
–120
–80
–160
–140
–100
–60
–20
Collector to emitter voltage V
CE
(V)
Collector current IC (mA)
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
100
200
300
400
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
7
Transistors with built-in Resistor
Cob — VCB IO — VIN VIN — IO
Characteristics charts of UN1117
IC — VCE VCE(sat) — IChFE — IC
Cob — VCB IO — VIN VIN — IO
UN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–3
–0.4
–10
–30
–100
–300
–1000
–3000
–10000
–1.4–1.2–1.0–0.8–0.6
Output current I
O
(µA)
Input voltage V
IN
(V)
V
O
=–5V
Ta=25˚C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
00 –12–2 –10–4 –8–6
–120
–100
–80
–60
–40
–20
Collector to emitter voltage V
CE
(V)
Collector current IC (mA)
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
100
200
300
400
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–3
–0.4
–10
–30
–100
–300
–1000
–3000
–10000
–1.4–1.2–1.0–0.8–0.6
Output current I
O
(µA)
Input voltage V
IN
(V)
V
O
=–5V
Ta=25˚C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
8
Transistors with built-in ResistorUN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
Characteristics charts of UN1118
IC — VCE VCE(sat) — IChFE — IC
Cob — VCB IO — VIN VIN — IO
Characteristics charts of UN1119
IC — VCE VCE(sat) — IChFE — IC
00 –12–2 –10–4 –8–6
–240
–200
–160
–120
–80
–40
Collector to emitter voltage V
CE
(V)
Collector current IC (mA)
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.5mA
–0.6mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
40
80
120
160
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–3
–0.4
–10
–30
–100
–300
–1000
–3000
–10000
–1.4–1.2–1.0–0.8–0.6
Output current I
O
(µA)
Input voltage V
IN
(V)
V
O
=–5V
Ta=25˚C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
00 –12–2 –10–4 –8–6
–240
–200
–160
–120
–80
–40
Collector to emitter voltage V
CE
(V)
Collector current IC (mA)
Ta=25˚C
I
B
=–1.0mA
–0.4mA
–0.3mA
–0.6mA
–0.9mA
–0.8mA
–0.7mA
–0.5mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
40
80
120
160
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
9
Transistors with built-in Resistor
Cob — VCB IO — VIN VIN — IO
Characteristics charts of UN1110
IC — VCE VCE(sat) — IChFE — IC
Cob — VCB IO — VIN VIN — IO
UN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–3
–0.4
–10
–30
–100
–300
–1000
–3000
–10000
–1.4–1.2–1.0–0.8–0.6
Output current I
O
(µA)
Input voltage V
IN
(V)
V
O
=–5V
Ta=25˚C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
00 –12–2 –10–4 –8–6
–120
–100
–80
–60
–40
–20
Collector to emitter voltage V
CE
(V)
Collector current IC (mA)
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
100
200
300
400
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–3
–0.4
–10
–30
–100
–300
–1000
–3000
–10000
–1.4–1.2–1.0–0.8–0.6
Output current I
O
(µA)
Input voltage V
IN
(V)
V
O
=–5V
Ta=25˚C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
10
Transistors with built-in ResistorUN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
Characteristics charts of UN111D
IC — VCE VCE(sat) — IChFE — IC
Cob — VCB IO — VIN VIN — IO
Characteristics charts of UN111E
IC — VCE VCE(sat) — IChFE — IC
00 –12–2 –10–4 –8–6
–60
–50
–40
–30
–20
–10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
40
80
120
160
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–3
–1.5
–10
–30
–100
–300
–1000
–3000
–10000
–4.0–3.5–3.0–2.5–2.0
Output current IO (µA)
Input voltage VIN (V)
V
O
=–5V
Ta=25˚C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
00 –12–2 –10–4 –8–6
–60
–50
–40
–30
–20
–10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA –0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
100
200
300
400
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
11
Transistors with built-in Resistor
Cob — VCB IO — VIN VIN — IO
Characteristics charts of UN111F
IC — VCE VCE(sat) — IChFE — IC
Cob — VCB IO — VIN VIN — IO
UN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–3
–1.5
–10
–30
–100
–300
–1000
–3000
–10000
–4.0–3.5–3.0–2.5–2.0
Output current I
O
(µA)
Input voltage V
IN
(V)
VO=–5V
Ta=25˚C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
00 –12–2 –10–4 –8–6
–240
–200
–160
–120
–80
–40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.1mA
–0.2mA
–0.3mA
–0.4mA
–0.5mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
40
80
120
160
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
0
–0.1 –0.3
6
5
4
3
2
1
–1 –3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–1
–3
–0.4
–10
–30
–100
–300
–1000
–3000
–10000
–1.4–1.2–1.0–0.8–0.6
Output current I
O
(µA)
Input voltage V
IN
(V)
V
O
=–5V
Ta=25˚C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
12
Transistors with built-in ResistorUN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
Characteristics charts of UN111H
IC — VCE VCE(sat) — IChFE — IC
Cob — VCB VIN — IO
Characteristics charts of UN111L
IC — VCE VCE(sat) — IChFE — IC
00 –12–2 –10–4 –8–6
–120
–100
–80
–60
–40
–20
Collector to emitter voltage V
CE
(V)
Collector current IC (mA)
Ta=25˚C
I
B
=–0.5mA
–0.3mA
–0.4mA
–0.2mA
–0.1mA
–0.01
–1 –3
–0.1
–1
–10
–100
–10 –30 –100 –300 –1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0
–0.1 –0.3
240
200
160
120
80
40
–1 –3 –10 –30 –100
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
0–1
6
5
4
3
2
1
–3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–0.01
–0.1 –0.3
–0.1
–1
–10
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
00 –12–2 –10–4 –8–6
–240
–200
–160
–120
–80
–40
Collector to emitter voltage V
CE
(V)
Collector current IC (mA)
Ta=25˚C
I
B
=–1.0mA
–0.2mA
–0.4mA
–0.6mA
–0.8mA
–0.01
–0.03
–1 –3
–0.1
–0.3
–1
–3
–10
–30
–100
–10 –30 –100 –300 –1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
0–1 –3
240
200
160
120
80
40
–10 –30 –100 –300 –1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
13
Transistors with built-in Resistor
Cob — VCB VIN — IO
UN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
0–1
6
5
4
3
2
1
–3 –10 –30 –100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25˚C
–0.01
–0.1 –0.3
–0.1
–1
–10
–100
–1 –3 –10 –30 –100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
=–0.2V
Ta=25˚C
