SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. FEATURES E B L L MMBTA42 Voltage MMBTA43 Collector-Emitter MMBTA42 Voltage MMBTA43 300 VCBO P V 200 300 V 200 VEBO 5.0 V Collector Current IC 500 mA Emitter Current IE -500 mA PC * 350 mW Junction Temperature Tj 150 Storage Temperature Tstg -55150 Emitter-Base Voltage Collector Power Dissipation P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P M K VCEO 1 UNIT C Collector-Base RATING J SYMBOL 3 N CHARACTERISTIC H MAXIMUM RATING (Ta=25) G A 2 D Complementary to MMBTA92/93. 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 * : Package Mounted On 99.5% Alumina 1080.6mm. Marking Type Name Lot No. AAX Lot No. Type Name MMBTA42 ABX MMBTA43 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Collector-Base MMBTA42 Breakdown Voltage MMBTA43 Collector-Emitter MMBTA42 Breakdown Voltage MMBTA43 SYMBOL MIN. TYP. MAX. 300 - - 200 - - 300 - - 200 - - IC=1.0mA, VCE=10V 40 - - IC=10mA, VCE=10V 40 - - IC=30mA, VCE=10V 40 - - V(BR)CBO IC=100A, IE=0 V(BE)CEO IC=1.0mA, IB=0 * hFE DC Current Gain TEST CONDITION UNIT V V Collector-Emitter Saturation Voltage VCE(sat) IC=20mA, IB=2.0mA - - 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=20mA, IB=2.0mA - - 0.9 V 50 - - MHz - - 3.0 - - 4.0 fT Transition Frequency Collector Output MMBTA42 Capacitance MMBTA43 Cob VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0, f=1MHz pF *Pulse Test : Pulse Width300 S, Duty Cycle2.0% 1999. 11. 30 Revision No : 3 1/2 MMBTA42/43 h FE - I C f T - IC DC CURRENT GAIN h FE VCE =10V TRANSITION FREQUENCY f T (MHz) 300 Tj =125 C 100 T j =25 C 50 Tj =-55 C 30 10 1 3 5 30 10 100 50 VCE =20V f=20MHz 10 100 50 T j =25 C 30 1 3 COLLECTOR CURRENT I C (mA) 5 10 30 50 100 COLLECTOR CURRENT I C (mA) I C - V CE 1k COLLECTOR CURRENT I C (mA) COLLECTOR OUTPUT CAPACITANCE C ob (pF) C ob - V R 100 50 C eb 30 10 5 3 C ob 100 0.1 0.3 1 3 10 30 100 200 REVERSE VOLTAGE V R (V) Ta=25 C Tc=25 C 100mS 30 10 Tc=25 C 3 CURVES APPLY 1 1 10S 100S 1.0mS 300 0.5 0.5 BELOW RATED VCEO 1 3 10 MMBTA43 MMBTA42 30 100 500 COLLECTOR EMITTER VOLTAGE V CE (V) V BE(sat), V CE(sat) - I C SATURATION VOLTAGE VBE(sat), V CE(sat) (V) 1.4 1.2 T j =25 C 1.0 0.8 VBE(sat) @I C /I B=10 0.6 VBE(on) @V CE =10V 0.4 0.2 5.0 V CE(sat) @I C /I B =10 0 1 3 5 10 30 50 100 COLLECTOR CURRENT I C (mA) 1999. 11. 30 Revision No : 3 2/2