1999. 11. 30 1/2
SEMICONDUCTOR
TECHNICAL DATA
MMBTA42/43
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES
ᴌComplementary to MMBTA92/93.
MAXIMUM RATING (Ta=25ᴱ)
DIM MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
*Pulse Test : Pulse Width⏊300ỌS, Duty Cycle⏊2.0%
* : Package Mounted On 99.5% Alumina 10ᴧ8ᴧ0.6mm.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base
Breakdown Voltage
MMBTA42 V(BR)CBO IC=100ỌA, IE=0
300 - -
V
MMBTA43 200 - -
Collector-Emitter
Breakdown Voltage
MMBTA42 V(BE)CEO IC=1.0mA, IB=0 300 - -
V
MMBTA43 200 - -
DC Current Gain * hFE
IC=1.0mA, VCE=10V 40 - -
IC=10mA, VCE=10V 40 - -
IC=30mA, VCE=10V 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=20mA, IB=2.0mA - - 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=20mA, IB=2.0mA - - 0.9 V
Transition Frequency fTVCE=20V, IC=10mA, f=100MHz 50 - - MHz
Collector Output
Capacitance
MMBTA42
Cob VCB=20V, IE=0, f=1MHz
- - 3.0
pF
MMBTA43 - - 4.0
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base
Voltage
MMBTA42 VCBO
300
V
MMBTA43 200
Collector-Emitter
Voltage
MMBTA42 VCEO
300
V
MMBTA43 200
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC500 mA
Emitter Current IE-500 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Tstg -55ᴕ150 ᴱ
Type Name
Marking
MMBTA42 MMBTA43
Lot No.
AAX Type Name
Lot No.
ABX
1999. 11. 30 2/2
MMBTA42/43
Revision No : 3
10
TRANSITION FREQUENCY f (MHz)
T
100
301031
COLLECTOR CURRENT I (mA)
C
f - Ih - I
C
COLLECTOR CURRENT I (mA)
1 3 30 100
FE
DC CURRENT GAIN h
10
COLLECTOR OUTPUT CAPACITANCE
1
ob
310.30.1
REVERSE VOLTAGE V (V)
R
C - V
SATURATION VOLTAGE
BE(sat),
0
301031
COLLECTOR CURRENT I (mA)
C
V V - I
I - V
CE
COLLECTOR EMITTER VOLTAGE V (V)
0.5 1 3 10
0.5
C
COLLECTOR CURRENT I (mA)
FE C
10550
30
50
100
300
T =125 C
T =25 C
T =-55 C
V =10V
CE
j
j
j
ob R
C (pF)
10 30 100 200
3
5
10
30
50
100
Ceb
ob
C
BE(sat), CE(sat) C
V V (V)
CE(sat)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
100550
T =25 C
j
BE(sat)
V @I /I =10
CB
CE
V @V =10V
BE(on)
BC
V @I /I =10
CE(sat)
TC
100550
30
50
T =25 C
V =20V
f=20MHz
j
CE
CCE
30 100 500
1
3
10
30
100
300
1k
CURVES APPLY
BELOW RATED VCEO
10µS
1.0mS
100µS
Tc=25 C
Tc=25 C
100mS
MMBTA43
MMBTA42
Ta=25 C
5.0