ZXMS6001N3 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage: VDS = 60V On-State Resistance: 675m Max Nominal Load Current (VIN = 5V): 1.1A Min Nominal Load Current (VIN = 5V): 0.7A Clamping Energy: 550mJ Low Input Current Short-Circuit Protection with Auto Restart Overvoltage Protection (Active Clamp) Thermal Shutdown with Auto Restart Overcurrent Protection Input Protection (ESD) Load-Dump Protection (Actively Protects Load) Lead-Free Finish; RoHS Compliant (Note 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Description The ZXMS6001N3 is a low input current, self-protected, low-side IntelliFETTM MOSFET intended for VIN = 5V applications. It features monolithic overtemperature, overcurrent, overvoltage (active clamp) and ESD-protected logic-level functionality. It is intended as a general purpose switch. Applications Mechanical Data Case: SOT223 (Type DN) Case Material: Molded Plastic, "Green" Molding Compound. Especially Suited for Loads with a High Inrush Current, Such as Lamps and Motors All Types of Resistive, Inductive, and Capacitive Loads in Switching Applications C Compatible Power Switch for 12V and 24V DC Applications Automotive Rated Replaces Electromechanical Relays and Discrete Circuits Linear Mode Capability: Current-Limiting Protection Circuitry is Designed to Deactivate at Low VDS to Minimize On-State Power UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish e3 Weight: 0.112 grams (Approximate) Dissipation. Maximum DC Operating Current is Determined by Thermal Capability of Package/Board Combination Rather Than by Protection Circuitry, Which Does Not Compromise The Product's Ability to Self-Protect at Low VDS. SOT223 (Type DN) Top View Pin Out Top View (Note 5) Ordering Information (Note 4) Part Number ZXMS6001N3TA Notes: Marking ZXMS6001 Reel Size (inches) 7 Tape Width (mm) 12 Quantity per Reel 1000 Units 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, see https://www.diodes.com/design/support/packaging/diodes-packaging/. 5. The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is recommended for best thermal performance. IntelliFET is a trademark of Diodes Incorporated. ZXMS6001N3 Document number: DS33603 Rev. 2 - 2 1 of 9 www.diodes.com June 2018 (c) Diodes Incorporated ZXMS6001N3 Marking Information ZXMS6001 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 8 = 2018) WW or WW = Week Code (01 to 53) Functional Block Diagram dV/dt Limitation ZXMS6001N3 Document number: DS33603 Rev. 2 - 2 2 of 9 www.diodes.com June 2018 (c) Diodes Incorporated ZXMS6001N3 Absolute Maximum Ratings (@TA = +25C, unless otherwise stated.) Characteristic Symbol Value Unit VDS 60 V VDS(SC) 36 V Continuous Input Voltage VIN -0.2 to +10 V Peak Input Voltage VIN -0.2 to +20 V Continuous Input Current -0.2V VIN 10V VIN < -0.2V or VIN > 10V IIN No Limit IIN 2 mA Operating Temperature Range TJ -40 to +150 C TSTG -55 to +150 C Power Dissipation at TA = +25C (Note 6) PD 1.5 W Power Dissipation at TA = +25C (Note 8) PD 0.6 W Continuous Drain Current @ VIN = 5V; TA = +25C (Note 6) ID 1.1 A Continuous Drain Current @ VIN = 5V; TA = +25C (Note 8) ID 0.7 A Continuous Source Current (Body Diode) (Note 6) IS 2.0 A Continuous Drain-Source Voltage Drain-Source Voltage for Short Circuit Protection VIN = 5V Storage Temperature Range Pulsed Source Current (Body Diode) (Note 7) IS 3.3 A EAS 550 mJ VLOADDUMP 80 V Unclamped Single Pulse Inductive Energy Load Dump Protection Electrostatic Discharge (Human Body Model) VESD 4000 V DIN Humidity Category, DIN 40 040 -- E -- IEC Climatic Category, DIN IEC 68-1 -- 40/150/56 -- Thermal Resistance Symbol Value Unit Junction to Ambient (Note 6) Characteristic RJA 83 C/W Junction to Ambient (Note 7) RJA 45 C/W Junction to Ambient (Note 8) RJA 208 C/W Recommended Operating Conditions The ZXMS6001 is optimized for use with C operating from 5V supplies. Characteristic Symbol Min Max Unit Input Voltage Range VIN 0 6 V Ambient Temperature Range TA -40 +125 C High Level Input Voltage for MOSFET (Note 9) VIH 4 6 V Peripheral Supply Voltage (Voltage to which Load is Referred) VP -- 60 V Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR-4 board with a high coverage of single-sided 2oz weight copper. Allocation of 6cm copper, 33% to source tab, and 66% to drain pin with source tab and drain pin electrically isolated. 7. For a device surface mounted on FR-4 board as (Note 6) and measured at t 10s. 8. For a device surface mounted on FR-4 board with the minimum copper required for electrical connections. 9. Recommended input voltage range over which protection circuits function as specified. ZXMS6001N3 Document number: DS33603 Rev. 2 - 2 3 of 9 www.diodes.com 2 June 2018 (c) Diodes Incorporated ZXMS6001N3 Electrical Characteristics (@TA = +25C, unless otherwise stated.) Characteristic Static Characteristics Symbol Min Drain-Source Clamp Voltage Typ Max Unit Conditions VDS(AZ) 60 70 75 V ID = 10mA Off State Drain Current IDSS -- 0.1 3 A VDS = 12V, VIN = 0V Off State Drain Current IDSS -- 3 15 A VDS = 32V, VIN = 0V 1.8 2.5 V VDS = VGS, ID = 10mA Input Threshold Voltage (Note 10) VIN(TH) 1 Input Current IIN -- 150 -- A VIN = +3V Input Current IIN -- 335 500 A VIN = +5V, All Circumstances Static Drain-Source On-State Resistance RDS(ON) -- 1 2 VIN = 3V, ID = 0.1A Static Drain-Source On-State Resistance RDS(ON) -- 520 675 m VIN = 5V, ID = 0.7A ID(LIM) 1 1.8 3 A VIN = 5V, VDS > 5V Turn-On Time (VIN to 90% ID) tON -- 27 -- s RL = 22, VIN = 0 to 5V, VDD = 12V Turn-Off Time (VIN to 90% ID) tOFF -- 26 -- s RL = 22, VIN = 5V to 0V, VDD = 12V Slew Rate On (70 to 50% VDD) dVDS/dtON -- 1.4 -- V/s RL= 22, VIN = 0 to 5V, VDD = 12V Slew Rate Off (50 to 70% VDD) dVDS/dtON -- 1.2 -- V/s RL = 22, VIN = 5V to 0V, VDD = 12V Protection Functions (Note 12) Minimum Input Voltage for OverTemperature Protection (Note 13) Maximum Input Voltage for OverTemperature Protection (Note 13) VPROT(MIN) -- 3.5 4 V TTRIP > +150C VPROT(MAX) 6 7 -- V TTRIP > +150C Thermal Overload Trip Temperature TJT +150 +175 -- C -- Thermal Hysteresis Unclamped Single Pulse Inductive Energy TJ = +25C -- -- +8 -- C -- EAS 550 -- -- mJ ID(ISO) = 0.7A, VDD = 32V EAS 200 -- -- mJ ID(ISO) = 0.7A, VDD = 32V VSD -- -- 1 V Current Limit (Note 11) Dynamic Characteristics Unclamped Single Pulse Inductive Energy TJ = +150C Inverse Diode Source Drain Voltage Notes: VIN = 0V, -ID = 1.4A 10. Recommended input voltage range over which protection circuits function as specified. 11. The drain current is limited to a reduced value when VDS exceeds a safe level. 12. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. 13. Not subject to production test, specified by design. ZXMS6001N3 Document number: DS33603 Rev. 2 - 2 4 of 9 www.diodes.com June 2018 (c) Diodes Incorporated ZXMS6001N3 Application Information The current-limit protection circuitry is designed to deactivate at low VDS to prevent the load current from unnecessarily restriction during normal operation. The design max-DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry (see Typical Output Characteristic graph). This does not compromise the products ability to self-protect at low VDS. The overtemperature protection circuit trips at a minimum of +150C, so the available package dissipation reduces as the maximum required ambient temperature increases. This leads to the following maximum recommended continuous operating currents. Minimum Copper Area Characteristics For minimum copper condition as described in Note 8. Max Ambient Temperature TA Maximum Continuous Current VIN = 5V +25C at VIN = 5V 720mA +70C at VIN = 5V 575mA +85C at VIN = 5V 520mA +125C at VIN = 5V 320mA See Note 8 TA=25C TA=25C TA=25C ZXMS6001N3 Document number: DS33603 Rev. 2 - 2 5 of 9 www.diodes.com June 2018 (c) Diodes Incorporated ZXMS6001N3 Large Copper Area Characteristics For large copper area as described in Note 6. Max Ambient Temperature TA Maximum Continuous Current VIN = 5V +25C at VIN = 5V 1140mA +70C at VIN = 5V 915mA +85C at VIN = 5V 825mA +125C at VIN = 5V 510mA See Note 6 TA=25C TA=25C TA=25C ZXMS6001N3 Document number: DS33603 Rev. 2 - 2 6 of 9 www.diodes.com June 2018 (c) Diodes Incorporated ZXMS6001N3 TJ=25C ZXMS6001N3 Document number: DS33603 Rev. 2 - 2 7 of 9 www.diodes.com June 2018 (c) Diodes Incorporated ZXMS6001N3 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) D b2 C E1 E Gauge Plane 0.25 Seating Plane e L b e1 A A1 SOT223 (Type DN) Dim Min Max Typ A -1.70 -A1 0.01 0.15 -A2 1.50 1.68 1.60 b 0.60 0.80 0.70 b2 2.90 3.10 -c 0.20 0.32 -D 6.30 6.70 -E 6.70 7.30 -E1 3.30 3.70 -e --2.30 e1 --4.60 L 0.85 --All Dimensions in mm A2 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) X1 Y1 C1 Y2 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y X ZXMS6001N3 Document number: DS33603 Rev. 2 - 2 C 8 of 9 www.diodes.com June 2018 (c) Diodes Incorporated ZXMS6001N3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2018, Diodes Incorporated www.diodes.com ZXMS6001N3 Document number: DS33603 Rev. 2 - 2 9 of 9 www.diodes.com June 2018 (c) Diodes Incorporated