Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 60
IC @ TC = 100°C Continuous Collector Current 31 A
ICM Pulsed Collector Current Q120
ILM Clamped Inductive Load Current R120
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy S15 mJ
PD @ TC = 25°C Maximum Power Dissipation 160
PD @ TC = 100°C Maximum Power Dissipation 65
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
IRG4BC40S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91455B
E
C
G
n-channel
FeaturesFeatures
FeaturesFeatures
Features
• Standard: optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Benefits
VCES = 600V
VCE(on) typ. = 1.32V
@VGE = 15V, IC = 31A
4/17/2000
Absolute Maximum Ratings
W
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.77
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– 80
Wt Weight 2.0 (0.07) ––– g (oz)
Thermal Resistance
T
O
-22
0
AB
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Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) —100 150 IC = 31A
Qge Gate - Emitter Charge (turn-on) —14 21 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) —34 51 VGE = 15V
td(on) Turn-On Delay Time —22 —
trRise Time —18 —TJ = 25°C
td(off) Turn-Off Delay Time —650 980 IC = 31A, VCC = 480V
tfFall Time —380 570 VGE = 15V, RG = 10Ω
Eon Turn-On Switching Loss —0.45 —Energy losses include "tail"
Eoff Turn-Off Switching Loss —6.5 —mJ See Fig. 10, 11, 13, 14
Ets Total Switching Loss —6.95 9.9
td(on) Turn-On Delay Time —23 —TJ = 150°C,
trRise Time —21 —IC = 31A, VCC = 480V
td(off) Turn-Off Delay Time —1000 —VGE = 15V, RG = 10Ω
tfFall Time —940 —Energy losses include "tail"
Ets Total Switching Loss —12 —mJ See Fig. 13, 14
LEInternal Emitter Inductance —7.5 —nH Measured 5mm from package
Cies Input Capacitance —2200 —VGE = 0V
Coes Output Capacitance —140 —pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance —26 —ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 —— VV
GE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage T18 —— VV
GE = 0V, IC = 1.0A
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage —0.75 —V/°CV
GE = 0V, IC = 1.0mA
—1.32 1.5 IC = 31A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage —1.68 — IC = 60A See Fig.2, 5
—1.32 — IC = 31A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 —6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage —-9.3 —mV/°CV
CE = VGE, IC = 250µA
gfe Forward Transconductance U12 21 —SV
CE = 100V, IC = 31A
——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
——1000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ——±100 n A VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
TPulse width ≤ 80µs; duty factor ≤ 0.1%.
UPulse width 5.0µs, single shot.
Notes:
QRepetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
RVCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
SRepetitive rating; pulse width limited by maximum
junction temperature.
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Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
0.1 1 10
CE
C
I , Collector-to-Emitter Current (A)
V , Collector-to-Emitter Volta
g
e (V)
T = 150°C
T = 25°C
J
J
V = 15V
20µs PULSE WIDTH
GE
A
1
10
100
1000
5678910
C
I , Collector-to-Emitter Current (A)
GE
T = 25°C
T = 150°C
J
J
V , Gate-to-Emitter Volta
g
e (V)
A
V = 50V
5µs PULSE WIDTH
CC
0
10
20
30
40
50
60
70
0.1 1 10 100
f, Fre
q
uenc
y
(
kHz
)
A
60% of rated
voltage
I
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
T = 125°C
T = 90°C
Gate drive as specified
sink
J
Triangular wave:
I
Clamp voltage:
80% of rated
Power D issipation = 28W
Load Current ( A )
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
CE
V , Collector-to-Emitter Voltage (V)
V = 1 5V
80
µ
s PULSE W IDTH
GE
A
T , Junction Temperature
(
°C
)
J
I = 16A
I = 3 1A
I = 6 2A
C
C
C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
12
JDM
thJC
C
0
10
20
30
40
50
60
25 50 75 100 125 150
Maximum DC Collector Current (A)
T , Case Temperature (°C)
C
V = 15V
GE
A
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Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
1000
2000
3000
4000
1 10 100
CE
C, Capacitance (pF)
V , Collector-to-Emitter Volta
g
e
(
V
)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
re s gc
oes ce gc
C
ies
C
res
C
oes
0
4
8
12
16
20
0 20 40 60 80 100 120
GE
V , Gate-to-Emitter Voltage (V)
g
Q , Total Gate Char
g
e
(
nC
)
A
V = 400V
I = 31A
CE
C
7.3
7.4
7.5
7.6
7.7
7.8
0 102030405060
G
Total Switching Losses (mJ)
R , Gate Resistance (
Ω
)
A
V = 480V
V = 15V
T = 25°C
I = 31A
CC
GE
J
C
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
Total Switching Losses (m J)
R = 10
Ω
V = 15V
V = 480V
A
T , Junction Temperature
(
°C
)
J
I = 62A
I = 31A
I = 16A
G
GE
CC
C
C
C
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Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
0
10
20
30
0 10203040506070
C
Total Switching Losses (mJ)
I , Collector-to-Emitter Current (A)
A
R = 10
Ω
T = 150°C
V = 480V
V = 15V
G
J
CC
GE
1
10
100
1000
1 10 100 1000
C
CE
GE
V , Collector-to-Em itter Voltage (V)
I , Collector-to-Emitter Current (A)
SAFE OPERATING AREA
V = 20V
T = 125°C
GE
J
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480V
4 X IC@25°C
D.U.T.
50V
L
V *
C
Q
R
* Driver same t
y
p
e as D.U.T.; Vc = 80% of Vce
(
max
)
* Note: Due to the 50V
p
ower su
p
p
l
y
,
p
ulse width and inductor
w ill increase to obtain rated Id.
1000V
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
480µF
960V
0 - 480V
RL =
t=5µs
d(on)
t
t
f
t
r
90%
t
d(off)
10%
90%
10%
5%
V
C
I
C
E
on
E
off
ts on off
E = (E +E )
Q
R
S
Fig. 14b - Switching Loss
Waveforms
50V
Driver*
1000V
D.U.T.
I
C
C
V
Q
RS
L
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
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Case Outline and Dimensions — TO-220AB
0.55 (.022)
0.46 (.018)
3 X
2.92 (.115)
2.64 (.104)
1.32 (.052)
1.22 (.048)
- B -
4.69 (.185)
4.20 (.165)
3.78 (.149)
3.54 (.139)
- A -
6.47 (.255)
6.10 (.240)
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3 X
3.96
(
.160
)
3.55
(
.140
)
3 X
0.93
(
.037
)
0.69
(
.027
)
0.36 (.014) M B A M
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1.40 (.055)
1.15 (.045)
3 X
2.54 (.100)
2X
1 2 3
4
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e ns io ns in M illim eters and (In c he s)
LEAD ASSIGNMENTS
1 - GATE
2 - COLLE C TO R
3 - EM ITTER
4 - COLLE C TO R
NOTES:
1 DIMENSIONS & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIM E N S IO N S A R E S H O W N
M ILLIM E TER S
(
INCHES
)
.
4 CONFORMS TO JEDEC OUTLINE
TO-220AB.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 4/00
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