IGC13T120T6L
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7623C, Edition 1, 31.10.2007
IGBT4 Low Power Chip
This chip is used for:
• low / medium power modules
Features:
• 1200V Trench + Field stop technology
• low switching losses
• positive temperature coefficient
• easy paralleling
Applications:
• low / medium power drives
G
C
E
Chip Type VCE ICn Die Size Package
IGC13T120T6L 1200V
10A 3.54 x 3.81 mm2 sawn on foil
MECHANICAL PARAMETER
Raster size 3.54 x 3.81
Emitter pad size 1.497 x 2.34
Gate pad size 0.608 x 1.092
Area total / active 13.48 / 6.93
mm2
Thickness 115 µm
Wafer size 150 mm
Flat position 90 grd
Max.possible chips per wafer 1109
Passivation frontside Photoimide
Pad metal 3200 nm AlSiCu
Backside metal Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond Electrically conductive glue or solder
Wire bond Al, <500µm
Reject ink dot size ∅ 0.65mm ; max 1.2mm
Recommended storage environment Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
IGC13T120T6L
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7623C, Edition 1, 31.10.2007
MAXIMUM RATINGS
Parameter Symbol Value Unit
Collector-Emitter voltage, Tj=25 °C VCE
1200 V
DC collector current, limited by Tjmax IC 1 ) A
Pulsed collector current, tp limited by Tjmax
Icpuls 30 A
Gate-Emitter voltage VGE
±20 V
Operating junction temperature Tj -40 ... +175 °C
Short circuit data
2 ) VGE = 15V, VCC = 800V, Tvj = 150°C tp 10 µs
Reverse bias safe operating area 2 ) (RBSOA) IC max = 20A, VCE max = 1200V, Tvj max= 150°C
1 ) depending on thermal properties of assembly
2 ) not subject to production test - verified by design/characterization
STATIC CHARACTERISTICS (tested on wafer), Tj=25 °C
Value
Parameter Symbol Conditions min. typ. max. Unit
Collector-Emitter breakdown voltage V(BR)CES VGE=0V , IC= 0.5 mA 1200
Collector-Emitter saturation voltage VCE(sat) VGE=15V, IC=10A 1.6 1.85 2.1
Gate-Emitter threshold voltage VGE(th) IC=0.35mA , VGE=VCE
5.0 5.8 6.5
V
Zero gate voltage collector current ICES
VCE=1200V , VGE=0V 1.2 µA
Gate-Emitter leakage current IGES
VCE
=0V , VGE=20V 120 nA
Integrated gate resistor RGint - Ω
ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design/characterization)
Value
Parameter Symbol Conditions min. typ. max. Unit
Input capacitance Ciss 625
Output capacitance Coss 60
Reverse transfer capacitance Crss
VCE=25V,
VGE =0V,
f=1MHz 40
pF
IGC13T120T6L
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7623C, Edition 1, 31.10.2007
SWITCHING CHARACTERISTICS inductive load (not subject to production test - verified by design
/characterization) Value
Parameter Symbol Conditions 1) min. typ. max. Unit
Turn-on delay time td(on) tbd
Rise time tr tbd
Turn-off delay time td(off) tbd
Fall time tf
Tj=125°C
VCC=600V,
IC=10A,
VGE =-15/15V,
RG= ---Ω tbd
ns
1) values also influenced by parasitic L- and C- in measurement and package.
IGC13T120T6L
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7623C, Edition 1, 31.10.2007
CHIP DRAWING
IGC13T120T6L
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7623C, Edition 1, 31.10.2007
FURTHER ELECTRICAL CHARACTERISTICS
This chip data sheet refers to the
device data sheet tbd
DESCRIPTION
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved
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