Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching
applications.
Collector – Emitter Saturation Voltage —
VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
Collector Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min) — BD243B, BD244B
= 100 Vdc (Min) — BD243C, BD244C
High Current Gain Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO–220 AB Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Symbol
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
BD243B
BD244B
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
BD243C
BD244C
ÎÎÎ
Î
Î
Î
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎ
ÎÎÎÎ
80
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VCB
ÎÎÎÎ
ÎÎÎÎ
80
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current Continuous
Peak
ÎÎÎÎ
ÎÎÎÎ
IC
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
6
10
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation
@ TC = 25C
Derate above 25C
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
PD
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
65
0.52
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
RθJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.92
ÎÎÎ
ÎÎÎ
C/W
80
60
40
20
00 20 40 60 80 100 120 140 160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10 1Publication Order Number:
BD243B/D
BD243B
BD243C
BD244B
BD244C
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80–100 VOLTS
65 WATTS
*ON Semiconductor Preferred Device
CASE 221A–06
TO–220AB
NPN
PNP
*
*
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
123
4
BD243B BD243C BD244B BD244C
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2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1)
(IC= 30 mAdc IB= 0) BD243B BD244B
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
80
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 30 mAdc, IB = 0) BD243B, BD244B
BD243C, BD244C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
80
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0) BD243B, BD243C, BD244B, BD244C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
0.7
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0) BD243B, BD244B
(VCE = 100 Vdc, VEB = 0) BD243C, BD244C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICES
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
400
400
ÎÎÎ
Î
Î
Î
ÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎ
Î
Î
Î
ÎÎÎ
30
15
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 1.0 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.5
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
2.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product (2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
ÎÎÎ
ÎÎÎ
3.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hfe
ÎÎÎ
Î
Î
Î
ÎÎÎ
20
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
(1) Pulse Test: Pulsewidth 300 µs, Duty Cycle 2.0%.
(2) fT = hfe ftest
Figure 2. Switching Time Test Circuit
2.0
0.06
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)µ
1.0
0.7
0.5
0.3
0.1
0.07
0.02 0.1 0.2 0.4 0.6 2.0 6.0
td @ VBE(off) = 5.0 V
TJ = 25°C
VCC = 30 V
IC/IB = 10
+ 11 V
0
VCC
- 30 V
SCOPE
RB
- 4 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
RC
tr
0.03
0.05
1.0 4.0
D1 MUST BE FAST RECOVERY TYPE eg.
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
25 µs
- 9.0 V D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.2
BD243B BD243C BD244B BD244C
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3
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
RθJC(max) = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03 0.3 3.0 30 300
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
CURVES APPLY BELOW RATED VCEO
10
5.0
Figure 5. Active Region Safe Operating Area
5.0
1.0
0.1 10 20 60 100
TJ = 150°C
BD243B, BD244B
BD243C, BD244C
5.0 ms
0.5 ms
0.2
2.0
0.5
IC, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0
0.3
40 80
1.0
ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C: TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C, TJ(pk) may be calculated from the data in
Figure 4. A t high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
0.06
Figure 6. Turn-Off Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)µ
2.0
1.0
0.5
0.3
0.2
0.1
0.07
0.05 0.1 0.2 0.4 0.6 2.0 6.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
ts
1.0 4.0
0.7
3.0
tf
300
0.5
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30 1.0 2.0 3.0 5.0 20 30 5010
CAPACITANCE (pF)
200
100
70
50
TJ = 25°C
Cib
Cob
BD243B BD243C BD244B BD244C
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4
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
0.06
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
5.0 0.1 0.2 0.3 0.4 0.6 1.0 2.0 6.0
100
50
30
10
2.0
0.06
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMPS)
0.2 0.3 0.6 2.0 3.0 4.0 6.0
0.8
0.4
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
2.0
10
Figure 10. “On” Voltages
IB, BASE CURRENT (mA)
020 30 50 100 200 300 500 100
0
1.6
1.2
0.8
0.4
IC = 1.0 A
TJ = 25°C
2.5 A 5.0 A
300
70
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
VCE = 2.0 V
+2.5
0.06
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 1.0 3.0 0.4 0.6
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
θVB FOR VBE
*θVC FOR VCE(sat)
*APPLIES FOR IC/IB 5.0
103
Figure 12. Collector Cut-Off Region
VBE, BASEEMITTER VOLTAGE (VOLTS)
102
101
100
10-1
, COLLECTOR CURRENT (A)µIC
10-2
10-3
-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
VCE = 30 V
TJ = 150°C
100°C
REVERSE FORWARD
IC = ICES
10M
Figure 13. Effects of Base–Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
20 40 60 80 100 120 140 160
1.0M
100k
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
VCE = 30 V
IC = 10 x ICES
IC ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
7.0
0.1 1.00.4
1.6
1.2
VBE @ VCE = 4.0 V
+1.0
2.00.1
IC = 2 x ICES
200
20
4.0
+ 25°C to + 150°C
- 55°C to + 25°C
+ 25°C to + 150°C
- 55°C to + 25°C
25°C
+0.7
10k
1.0k
0.1k
BD243B BD243C BD244B BD244C
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5
PACKAGE DIMENSIONS
CASE 221A–09
ISSUE AA
TO–220
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
BD243B BD243C BD244B BD244C
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6
Notes
BD243B BD243C BD244B BD244C
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7
Notes
BD243B BD243C BD244B BD244C
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8
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