CORPORATION GLBCP69 ISSUED DATE :2005/07/15 REVISED DATE : P NP S ILI CO N EP ITAX I AL T RANS ISTO R Description The GLBCP69 is designed for use in low voltage and medium power applications. Features VCEO : -20V IC :1A Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VBE(on) *hFE1 *hFE2 *hFE3 fT Min. -25 -20 -5 50 85 60 - Typ. 60 Ratings +150 -65~+150 -25 -20 -5 -1 1.5 Unit V V V A W ,unless otherwise noted) Max. Unit Test Conditions V IC=-100uA , IE=0 V IC=-1mA, IB=0 V IE=-10uA ,IC=0 -10 uA VCB=-25V, IE=0 -10 uA VEB=-5V, IC=0 -500 mV IC=-1A, IB=-100mA -1.0 V VCE=-1V, IC=-1A VCE=-10V, IC=-5mA 375 VCE=-1V, IC=-500mA VCE=-1V, IC=-1A MHz VCE=-5V, IC=-10mA *Pulse Test: Pulse Width 380 s, Duty Cycle 2% 1/2 CORPORATION ISSUED DATE :2005/07/15 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2