EPITAXIAL SILICON POWER TRANSISTORS BD433 BD434
BD435 BD436
BD437 BD438
BD439 BD440
BD441 BD442
NPN PNP
TO126
Plastic Package
Intended for use in Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS BD433 BD435 BD437 BD439 BD441
BD434 BD436 BD438 BD440 BD442
Collector Base Voltage VCBO 22 32 80
Collector Emitter Voltage VCES 22 32 80
Collector Emitter Voltage VCEO 22 32 80
Emitter Base Voltage VEBO 5.0
Collector Current IC4.0
Collector Peak Current (t=10ms_
ICM 7.0
Base Current IB1.0
Total Dissipation @ TC=25ºC PD36.0
Total Dissipation @ Ta=25ºC PD1.25
Derate above 25ºC 10
THERMAL RESISTANCE
Junction to Case Rth (j-c) 3.5
Junction to Ambient in free air Rth (j-a) 100
ELECTRICAL CHARACTERISTICS (T
=25ºC unless specified otherwise)
DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441
BD434 BD436 BD438 BD440 BD442
Collector Cut off Current ICBO <100 <100 <100 <100 <100 µA
Collector Cut off Current ICES <100 <100 <100 <100 <100 µA
Emitter Cut off Current IEBO <1.0 <1.0 <1.0 <1.0 <1.0 mA
*VCEO (sus) >22 >32 >45 >60 >80 V
*VCE (sat) <0.5 <0.5 <0.6 <0.8 <0.8 V
Base Emitter On Voltage *VBE (on) typ 0.58 V
<1.1 <1.1 <1.2 <1.5 <1.5 V
Collector Emitter Sustaining
Voltage
Collector Emitter Saturation
Voltage IC=2.0A, IB=0.2A
IC=10mA, VCE=5V ALL
IC=2.0A, VCE=1V
VCB=Rated VCBO, IE=0
VBE=0, VCE=Rated VCES
VEB=5V, IC=0
IC=100mA, IB=0
DESCRIPTION SYMBOL
Tj, Tstg - 65 to 150
45 60
45 60
45 60
Operating and Storage
Junction Temperature Range
A
V
UNIT
TEST CONDITION
A
A
W
ºC/W
ºC/W
UNIT
V
V
V
W
mW/ ºC
ºC
C
E
Transys
Electronics
LI
M
ITE
D