MICROELECTRONICS BUZ21 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR fz SGS-THOMSON 74,2 Li vf S 42-71% TYPE Voss Rosion) lp BUZ21 100 V 0.10 19A 100 VOLTS - FOR DC/DC CONVERTERS HIGH CURRENT RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) e ULTRA FAST SWITCHING * EASY DRIVE -FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: e UNINTERRUPTABLE POWER SUPPLIES MOTOR CONTROLS TO-220 N-channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch- INTERNAL SCHEMATIC 9 ing times make this POWER MOS transistor ideal DIAGRAM for high speed switching applications. Typical applications include DC/DC converters, UPS, battery chargers, secondary regulators ser- vo control, audio power amplifiers and robotics. ABSOLUTE MAXIMUM RATINGS Vos Drain-source voltage (Ves = 0) 100 V Vocr Drain-gate voltage (Reg = 20 KQ) 100 V Ves Gate-source voltage +20 V Ip Drain current (continuous) T, = 30C 19 A long Drain current (pulsed) 75 A FP... Total dissipation at T, <25C 75 Ww T5g Storage temperature 55 to 150 C Ty, Max. operating junction temperature 150 C DIN humidity category (DIN 40040) E IEC climatic category (DIN IEC 68-1) 55/150/56 * Introduced in 1988 week 44 June 1988 1/4BUZ21 THERMAL DATA Rin) - case Thermal resistance junction-case max 1.67 CIW Reni -amb |hermal resistance junction-ambient max 75 C/W ELECTRICAL CHARACTERISTICS (T ;= 25C unless otherwise specified) Parameters Test Conditions Min. | Typ. | Max. unit | | OFF Vian) pss Drain-source Ip = 250 pA Ves= 0 100 V breakdown voltage loss Zero gate voltage Vos = Max Rating 250 | pA drain current (Vgg=0) | Vpg = Max Rating T= 125C 1000] pA lass Gate-body leakage Veg= +20 V +100) nA | current (Vp5 = 0) | ON Ves (th) Gate threshold Vos = Ves Ip= 1 mA : 2.1 4 V voltage Ros (on) Static drain-source Ves= 10 V Ipb= 9A 0.1 Q on resistance ENERGY TEST luis Unclamped inductive | Vpp= 30 V L = 100 nH 19 A switching current starting Tj= 25C (single pulse) DYNAMIC ts Forward Vogs= 25 V Ipb= 9A 4.0 mho transconductance Ciss Input capacitance 2000 | pF Coss Output capacitance Vps= 25 V f= 1 MHz 700 | pF Criss Reverse transfer Veg= 0 240 | pF Capacitance __! SWITCHING | tg (on) Turn-on time Vop = 30 V Ip= 3A 45 | ns t, Rise time Res= 50 Q Ves= 10 V 75 ns ta (on) Turn-off delay time 220 | ns ty Fall time 110 | ns | OLAELECTRICAL CHARACTERISTICS (Continued) BUZ21 Parameters Test Conditions Min. | Typ. | Max. | Unit SOURCE DRAIN DIODE Isp Source-drain current | T,= 25C 19 | A loom. Source-drain current 2 | A (pulsed) | Vsp Forward on voltage Isp = 38 A Vesg= 0 2.1 V te Reverse recovery 200 ns time On Reverse recovered Isp= 19A di/dt = 100A/us 0.25 uC charge Safe operating areas *glA) 6 s 68 19 2 401 z f #492 2 Vig (WV) Output characteristics GC +0646 IgA) 8 8V 20 a 2 &. & Vps() Thermal impedance 2th J-C (K/W) 10 105 10% 193 1072 1071 10 tpls) Transfer characteristics GC-0660 Vog=25V 0 2 4 6 B Vgst) fas 2GS-THOMSON Derating curve 1390 Prot (W) 70 60 50 40 30 20 Transconductance Q5(S)BUZ21 Static drain-source on Maximum drain current Gate charge vs gate-source resistance vs temperature voltage ! GC-0661 Gt-0623 So sien! wr) Ves() 013 0 20 40 60 80 100 GIA) 0 50 100 60 TO) 0 20 40 60 Ogint) ( : ( { Capacitance variation Gate threshold voltage Drain-source on resistance vs temperature vs temperature GC-0648 R GC-087 Vesitm Ds Inorm) (norm) t fe Miz, Vos Ov Tease= 25C Ms | 14 ( 1.0 10 | 09 05 08 0 0 5 W 1% 20 35 30 35 40 Yos (Y) -50 0 50 100 Ty (C) -50 0 50 100 T, (0) Source-drain diode forward characteristics GC-0653 ign lA} T= 1508C 10 0 1 2 Vepl) 4/4