TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF8402 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications * * * * Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.) Low leakage current : P Channel IDSS = -10 A (VDS = -30 V) N Channel IDSS = 10 A (VDS = 30 V) Enhancement-mode : P Channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 30 V Drain-gate voltage (RGS = 20 k) VDGR -30 30 V Gate-source voltage VGSS 20 20 V Drain current DC (Note 1) ID -3.2 4.0 Pulse (Note 1) IDP -12.8 16.0 PD (1) 1.35 1.35 PD (2) 1.12 1.12 Drain power Single-device operation (Note 3a) dissipation (t = 5 s) Single-device value at (Note 2a) dual operation (Note 3b) A JEDEC JEITA TOSHIBA 2-3U1B Weight: 0.011 g (typ.) W Drain power Single-device operation (Note 3a) dissipation (t = 5 s) Single-device value at (Note 2b) dual operation (Note 3b) PD (1) 0.53 0.53 PD (2) 0.33 0.33 Single pulse avalanche energy (Note 4) EAS 0.67 2.6 mJ Avalanche current IAR -1.6 2.0 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with caution. 1 2009-12-10 TPCF8402 Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 92.6 Rth (ch-a) (2) 111.6 Rth (ch-a) (1) 235.8 Rth (ch-a) (2) 378.8 Unit C/W C/W Marking (Note 6) Lot code (month) Part No. (or abbreviation code) Pin #1 Lot No. F6B Product-specific code Lot code (year) Note 7 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) 25.4 25.4 FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (b) (a) Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: P Channel: VDD = -24 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = -1.6 A N Channel: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 2.0 A Note 5: Repetitive rating: Pulse width limited by maximum channel temperature. Note 6: "" on the lower left of the marking indicates Pin 1. Note 7 A dot marking identifies the indication of product Labels. Without a dot: [[Pb]]/INCLUDES > MCV With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-10 TPCF8402 P-channel Electrical Characteristics (Ta = 25C) Gate leakage current Symbol IGSS Drain cut-off current Drain-source breakdown voltage Gate threshold voltage VGS = 16 V, VDS = 0 V 10 A A -10 -30 V (BR) DSX ID = -10 mA, VGS = 20 V -15 Vth VDS = -10 V, ID = -1 mA -0.8 -2.0 Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss VGS = -4.5 V, ID = -1.6A 80 105 VGS = -10 V, ID = -1.6 A 60 72 VDS = -10 V, ID = -1.6 A 2.9 5.9 600 60 70 5.3 12 8.4 34 14 1.4 2.7 VDS = -10 V, VGS = 0 V, f = 1 MHz tr VGS ton tf toff Qg Gate-source charge 1 Qgs1 Gate-drain ("miller") charge Qgd ID = -1.6 A VOUT 0V -10 4.7 Switching time Total gate charge (gate-source plus gate-drain) Unit VDS = -30 V, VGS = 0 V |Yfs| Turn-off time Max ID = -10 mA, VGS = 0 V Forward transfer admittance Fall time Typ. IDSS RDS (ON) Turn-on time Min V (BR) DSS Drain-source ON resistance Rise time Test Condition RL = 9.38 Characteristics VDD -15 V Duty 1%, tw = 10 s VDD -24 V, VGS = -10 V, ID = -3.2 A V V m S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP -12.8 A 1.2 V VDSF IDR = -3.2 A, VGS = 0 V 3 2009-12-10 TPCF8402 N-channel Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 16 V, VDS = 0 V 10 A Drain cut-off current IDSS VDS = 30 V, VGS = 0 V 10 A V (BR) DSS ID = 10 mA, VGS = 0 V 30 V (BR) DSX ID = 10 mA, VGS = -20 V 15 VDS = 10 V, ID = 1 mA 1.3 2.5 VGS = 4.5 V, ID = 2.0 A 58 77 VGS = 10 V, ID = 2.0 A 38 50 VDS = 10 V, ID = 2.0 A 3.4 6.8 470 60 80 5.2 8.3 Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr VGS Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) 0V ton 4.7 Turn-on time ID = 2.0 A VOUT 10 V RL = 7.5 Drain-source breakdown voltage tf toff VDD 15 V Duty 1%, tw = 10 s Qg Gate-source charge 1 Qgs1 Gate-drain ("miller") charge Qgd VDD 24 V, VGS = 10 V, ID = 4 A V V m S pF ns 4.0 22 10 1.7 2.4 nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 16.0 A -1.2 V VDSF IDR = 4.0 A, VGS = 0 V 4 2009-12-10 TPCF8402 P-channel ID - VDS ID - VDS -5 -3.5 -10 -6 -3.0 Drain current ID -2.7 -2.6 -2 -2.5 -1 -6 -2.8 -2.6 -0.4 -0.6 Drain-source voltage -0.8 VDS -2.5 VGS = -2.3 V 0 0 -2.7 -4 -2 VGS = -2.3 -0.2 -4.5 -6 (A) (A) -2.8 -3 -1.0 0 (V) -2 -1 VDS (V) VDS - VGS Common source Common source (V) Pulse test Ta= 25 -1.6 Pulse test VDS -6 Drain-source voltage (A) Drain current ID -5 -4 -2.0 VDS = -10 V -4 -2 Ta = -55C 100 0 -2 -1 -1.2 -0.8 -1.6 -0.4 ID = -3.2A -0.8 25 -3 Gate-source voltage VGS 0 -5 -4 0 (V) -4 -2 VGS -8 -10 (V) RDS (ON) - ID 1000 Common source VDS = -10 V Ta = 25C Pulse test Pulse test Drain-source ON resistance RDS (ON) (m) Common source Ta = -55C 10 100 25 1 -0.1 -6 Gate-source voltage Yfs - ID 100 Forward transfer admittance Yfs (S) -3 Drain-source voltage ID - VGS -8 0 Common source Ta = 25C Pulse test -3.5 -8 -4.5 0 -10 -3.0 Drain current ID -4 -10 Common source Ta = 25C Pulse test -0.3 -1 -3 100 -10 10 0.1 -10 VGS = -4.5 V -1 -10 Drain current ID (A) Drain current ID (A) 5 2009-12-10 TPCF8402 P-channel RDS (ON) - Ta IDR - VDS 10 Drain reverse current IDR (A) 120 ID = -0.8A, -1.6A, -3.2A 90 VGS = -4.5V 60 ID = -0.8A, -1.6A, -3.2A VGS = -10V 30 Common source -10 5 -1.0 -3.0 3 VGS = 0 V -5.0 1 0.5 0.3 Common source Ta = 25C Pulse test 0 -80 -40 0 40 80 120 Pulse test 0.1 0 160 0.3 Ambient temperature Ta (C) 0.6 Drain-source voltage Capacitance - VDS 1.5 1.2 VDS (V) Vth - Ta -2.0 Vth (V) 1000 100 Gate threshold voltage (pF) Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25C 10 -0.1 -1.5 -1.0 Common source -0.5 VDS = -10 V ID = -1mA Pulse test -1 -3 -5 Drain-source voltage -10 VDS 0 -80 -30 -50 -100 -40 (V) 0 80 120 160 Ambient temperature Ta (C) Dynamic input/output characteristics PD - Ta 2.0 40 -15 -30 Device mounted on a glass-epoxy board (a) (Note 2a) (3)Single-device operation (Note 3a) (1) (4)Single-device value at dual operation (Note 3b) 5s 1.2 -25 -20 (2) 0.8 (3) 0.4 (V) (V) Device mounted on a glass-epoxy board (b) (Note 2b) VDS (2)Single-device value at dual operation (Note 3b) 1.6 Drain-source voltage Drain power dissipation PD (W) (1)Single-device operation (Note 3a) VDS VDD = -24V VGS -10 VDD = -6V -15 -12 -10 -24 -6 40 80 120 160 0 0 200 Ambient temperature Ta (C) Common -5 source ID = -3.2 A -5 Ta = 25C (4) 0 0 -12 Pulse test 4 8 12 VGS Capacitance C 0.9 Gate-source voltage Drain-source ON resistance RDS (ON) (m) 150 0 16 Total gate charge Qg (nC) 6 2009-12-10 TPCF8402 P-channel rth - tw Transient thermal impedance rth (/W) 1000 Single pulse (4) (3) (2) (1) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe operating area -100 Drain current ID (A) ID max (pulsed) * -10 1 ms * 10 ms * -1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. -0.1 -0.1 -1 Drain-source voltage VDSS max -10 -100 VDS (V) 7 2009-12-10 TPCF8402 N-channel ID - VDS ID - VDS 10 4.5 3.8 3.5 8.0 3 10 3.2 2 3.0 1 Common source Ta = 25C Pulse test 8.0 3.8 6.0 4.5 8 Drain current ID (A) Drain current Common source Ta = 25C Pulse test 6.0 4 10 ID (A) 5 6 3.5 4 3.2 2 3.0 VGS = 2.8 V 0 0 0.4 0.2 0.6 Drain-source voltage 0.8 VDS 0 1.0 VGS = 2.8 V 0 (V) 2 1 Drain-source voltage ID - VGS 8 Common source Common source Ta= 25 (V) Pulse test 1.6 VDS 6 Drain-source voltage (A) (V) VDS - VGS Pulse tset Drain current ID VDS 2.0 VDS = 10 V 4 2 25 100 0 0 2 1 VGS 0.8 0.4 0 5 4 3 1.2 2 ID = 4A 1 Ta = -55C Gate-source voltage 0 (V) 2 4 8 6 Gate-source voltage Yfs - ID VGS 10 (V) RDS (ON) - ID 100 100 Common source VDS = 10 V Pulse test Drain-source ON resistance RDS (ON) (m) Forward transfer admittance Yfs (S) 5 4 3 Ta = -55C 10 100 25 1 4.5 30 VGS = 10V Common source Ta = 25C 0.1 0 0.3 1 3 10 0.1 10 Drain current ID (A) Pulse test 1 10 Drain current ID (A) 8 2009-12-10 TPCF8402 N-channel RDS (ON) - Ta IDR - VDS 10 120 Common source Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) (m ) 10 Pulse test 100 ID = 4A 2A 80 1A VGS = 4.5V 60 40 VGS = 10V ID = 4, 2, 1A 20 5.0 3.0 5 1.0 3 VGS = 0 V 1 0.5 0.3 Common source Ta = 25C Pulse test 0 -80 -40 0 40 80 120 0.1 0 160 -0.2 Ambient temperature Ta (C) -0.4 -0.6 Drain-source voltage Capacitance - VDS -1.0 -0.8 VDS -1.2 (V) Vth - Ta 1000 3 Vth (V) 100 Coss Gate threshold voltage Capacitance C (pF) Ciss Crss 10 Common source VGS = 0 V f = 1 MHz 2 1 Common source VDS = 10 V ID = 1mA Pulse test Ta = 25C 1 0.1 1 0.3 3 5 Drain-source voltage 10 30 50 0 -80 100 -40 VDS (V) 0 80 120 160 Ambient temperature Ta (C) Dynamic input/output characteristics PD - Ta 2.0 40 15 30 Device mounted on a glass-epoxy board (a) (Note 2a) (4) Single-device value at dual operation (Note 3b) 5s 1.2 20 (2) 0.8 (3) 0.4 VDS VDD = 24V VGS 15 12 Common source 10 24 6 40 80 120 160 0 0 200 Ambient temperature Ta (C) 12 5 ID = 4.0A Ta = 25C 5 Pulse test (4) 0 0 10 VDD = 6V 4 8 12 VGS (V) (1) 25 Gate-source voltage (3) Single-device operation (Note 3a) (V) Device mounted on a glass-epoxy board (b) (Note 2b) VDS (2) Single-device value at dual operation (Note 3b) 1.6 Drain-source voltage Drain power dissipation PD (W) (1) Single-device operation (Note 3a) 0 16 total gate charge Qg (nC) 9 2009-12-10 TPCF8402 N-channel rth - tw Transient thermal impedance rth (/W) 1000 Single Pulse (4) (3) (2) (1) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe operating area 100 Drain current ID (A) ID max (Pulsed) * 1 ms * 10 10 ms * 1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain-source voltage VDSS max 10 100 VDS (V) 10 2009-12-10 TPCF8402 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2009-12-10