2N6042 - ON Semiconductor - Datasheet.Live

October, 2011 − Rev. 9

1Publication Order Number:

2N6040/D

PNP - 2N6040, 2N6042,

NPN - 2N6043, 2N6045

Plastic Medium-Power

Complementary Silicon

Transistors

Plastic medium−power complementary silicon transistors are

designed for general−purpose amplifier and low−speed switching

applications.

Features

•High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

•Collector−Emitter Sustaining Voltage − @ 100 mAdc −

VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043

= 100 Vdc (Min) − 2N6042, 2N6045

•Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44

= 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045

•Monolithic Construction with Built−In Base−Emitter Shunt Resistors

•Epoxy Meets UL 94 V−0 @ 0.125 in

•ESD Ratings: Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

•Pb−Free Packages are Available*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎÎ

Value

ÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage 2N6040

2N6043

2N6042

2N6045

ÎÎÎ

VCEO

ÎÎÎÎÎ

60

100

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Base Voltage 2N6040

2N6043

2N6042

2N6045

ÎÎÎ

VCB

ÎÎÎÎÎ

60

100

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎ

5.0

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current Continuous

Peak

ÎÎÎ

IC

ÎÎÎÎÎ

8.0

16

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

IB

ÎÎÎÎÎ

120

ÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25°C

Derate above 25°C

ÎÎÎ

PD

ÎÎÎÎÎ

75

0.60

ÎÎ

W

W/°C

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎ

–65 to +150

ÎÎ

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220AB

CASE 221A−09

STYLE 1

MARKING DIAGRAM

2N604x = Device Code

x = 0, 2, 3, or 5

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

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DARLINGTON, 8 AMPERES

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 − 100 VOLTS, 75 WATTS

2N604xG

AYWW

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045

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2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Case

ÎÎÎÎ

qJC

ÎÎÎÎÎÎ

1.67

ÎÎÎ

°C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Ambient

ÎÎÎÎ

qJA

ÎÎÎÎÎÎ

57

ÎÎÎ

°C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0) 2N6040, 2N6043

2N6042, 2N6045

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

60

100

ÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) 2N6040, 2N6043

(VCE = 100 Vdc, IB = 0) 2N6042, 2N6045

ÎÎÎÎ

ICEO

ÎÎÎÎ

−

ÎÎÎ

20

ÎÎÎ

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6040, 2N6043

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc) 2N6042, 2N6045

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N6040, 2N6043

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N6041, 2N6044

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N6042, 2N6045

ÎÎÎÎ

ICEX

ÎÎÎÎ

−

ÎÎÎ

20

200

ÎÎÎ

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) 2N6040, 2N6043

(VCB = 100 Vdc, IE = 0) 2N6042, 2N6045

ÎÎÎÎ

ICBO

ÎÎÎÎ

−

ÎÎÎ

20

ÎÎÎ

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 4.0 Adc, VCE = 4.0 Vdc) 2N6040, 2N6043,

(IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6042, 2N6045

(IC = 8.0 Adc, VCE = 4.0 Vdc) All Types

ÎÎÎÎ

hFE

ÎÎÎÎ

1000

100

ÎÎÎ

20.000

20,000

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 16 mAdc) 2N6040, 2N6043,

(IC = 3.0 Adc, IB = 12 mAdc) 2N6042, 2N6045

(IC = 8.0 Adc, IB = 80 Adc) All Types

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎ

2.0

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

−

ÎÎÎ

4.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

−

ÎÎÎ

2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

ÎÎÎÎ

|hfe|

ÎÎÎÎ

4.0

ÎÎÎ

−

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance 2N6040/2N6042

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6043/2N6045

ÎÎÎÎ

Cob

ÎÎÎÎ

−

ÎÎÎ

300

200

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

300

ÎÎÎ

−

ÎÎÎ

−

*Indicates JEDEC Registered Data.

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045

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3

80

00 20 40 60 80 100 120 160

Figure 1. Power Derating

T, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

40

20

60

140

TC

4.0

0

2.0

1.0

3.0

TA

TC

Figure 2. Switching Times Equivalent Circuit

5.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

2.0

1.0

0.5

0.05 0.2 0.3 0.5 0.7 1.0 2.0 3.0 1

0

0.3

0.7

tf

tr

ts

td @ VBE(off) = 0 V

V2

approx

+8.0 V

V1

approx

-12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 ms

0

RB

51 D1

+4.0 V

VCC

-30 V

RC

TUT

≈ 8.0 k ≈120

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse all polarities and D1.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

3.0

0.2

0.1

0.07

5.0 7.0

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

PNP

NPN

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100

0

500

qJC(t) = r(t) qJC

qJC = 1.67°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.1

0.7

0.3

0.07

0.03

0.02 0.03 0.3 3.0 30 300

SINGLE PULSE 0.01

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045

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4

20

1.0

Figure 5. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

5.0

2.0

1.0

0.02 2.0 3.0 7.0 50 100

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

70

IC, COLLECTOR CURRENT (AMP)

TJ = 150°C

dc

1.0ms

100 ms

0.5

0.2

0.05

5.0

2N6040, 2N6043

2N6045

0.1

10 20 30

500 ms

5.0ms

CURVES APPLY BELOW RATED VCEO

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150°C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 150°C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

300

Figure 6. Small−Signal Current Gain

VR, REVERSE VOLTAGE (VOLTS)

30 0.5 1.0 2.0

100

5.00.1 0.2

C, CAPACITANCE (pF)

200

70

50

TJ = 25°C

Cib

100

Cob

PNP

NPN

10,000

1.0

Figure 7. Capacitance

f, FREQUENCY (kHz)

10 2.0 5.0 20 50 100010010 10 20

hfe,

S

MALL-

S

I

G

NAL

C

URRENT

G

AIN

5000

3000

2000

1000

500

300

200

100

50

30

20

200 500

PNP

NPN

TC = 25°C

VCE = 4.0 Vdc

IC = 3.0 Adc

50

20,000

0.1

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

200 0.2 0.3 0.5 1.0 2.0 10

hFE, DC CURRENT GAIN

0.7 7.0

PNP

2N6040, 2N6042

NPN

2N6043, 2N6045

10,000

TJ = 150°C

25°C

-55°C

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

VCE = 4.0 V

TJ = 150°C

25°C

-55°C

7000

5000

3000

2000

1000

700

500

300

3.0 5.0

VCE = 4.0 V

20,000

0.1

200 0.2 0.3 0.5 1.0 2.0 100.7 7.0

10,000

7000

5000

3000

2000

1000

700

500

300

3.0 5.0

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045

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5

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 9. Collector Saturation Region

3.0

0.3

IB, BASE CURRENT (mA)

1.0 0.5 1.0 2.0 10 30

1.8

IC = 2.0 A

TJ = 25°C

4.0 A

2.2

2.6

0.7 5.0 20

1.4

6.0 A

IB, BASE CURRENT (mA)

TJ = 25°C

3.0 7.0

IC = 2.0 A 4.0 A 6.0 A

3.0

0.3

1.0 0.5 1.0 2.0 10 30

1.8

2.2

2.6

0.7 5.0 20

1.4

3.0 7.0

3.0

0.1

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 3.0 10

2.5

2.0

1.5

1.0

0.5

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

VBE @ VCE = 4.0 V

2.0

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

7.05.0

3.0

0.1 0.2 0.3 0.5 0.7 1.0 3.0 10

2.5

2.0

1.5

1.0

0.5 2.0 7.05.0

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 4.0 V

Figure 10. “On” Voltages

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045

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6

ORDERING INFORMATION

Device Package Shipping

2N6040 TO−220AB

50 Units / Rail

2N6040G TO−220AB

(Pb−Free)

2N6042 TO−220AB

2N6042G TO−220AB

(Pb−Free)

2N6043 TO−220AB

2N6043G TO−220AB

(Pb−Free)

2N6045 TO−220AB

2N6045G TO−220AB

(Pb−Free)

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045

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7

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

B

Q

H

Z

L

V

G

N

A

K

F

123

4

D

SEATING

PLANE

−T−

C

S

T

U

R

J

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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