CMOS Low Voltage
2 Ω SPST Switches in SC70 Packages
ADG741/ADG742
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 © 2005 Analog Devices, Inc. All rights reserved.
FEATURES
1.8 V to 5.5 V single supply
2 Ω (typ) on resistance
Low on resistance flatness
−3 dB bandwidth >200 MHz
Rail-to-rail operation
6-lead and 5-lead SC70 packages
Fast switching times
tON 18 ns
tOFF 12 ns
Typical power consumption (<0.01 µW)
TTL-/CMOS-compatible
APPLICATIONS
Battery-powered systems
Communication systems
Sample-and-hold systems
Audio signal routing
Video switching
Mechanical reed relay replacement
GENERAL DESCRIPTION
The ADG741/ADG742 are monolithic CMOS SPST switches.
These switches are designed using an advanced submicron
process that provides low power dissipation, yet offers high
switching speed, low on resistance, and low leakage currents. In
addition, −3 dB bandwidths of greater than 200 MHz can be
achieved.
The ADG741/ADG742 can operate from a single 1.8 V to 5.5 V
supply, making them ideal for use in battery-powered instru-
ments and with Analog Devices’ new generation of DACs and
ADCs.
As shown in the Functional Block Diagrams, with a logic input
of 1 the switch of the ADG741 is closed, while that of the
ADG742 is open. Each switch conducts equally well in both
directions when on.
The ADG741/ADG742 are available in 6-lead and 5-lead SC70
packages.
FUNCTIONAL BLOCK DIAGRAMS
IN
SD
ADG741
02076-001
SWITCH SHOWN FOR
A LOGIC 1 INPUT
Figure 1.
IN
SD
ADG742
SWITCH SHOWN FOR
A LOGIC 1 INPUT
02076-019
Figure 2.
PRODUCT HIGHLIGHTS
1. 1.8 V to 5.5 V Single-Supply Operation.
The ADG741/ADG742 offer high performance, including
low on resistance and fast switching times. They are fully
specified and guaranteed with 3 V and 5 V supply rails.
2. Ver y Low RON (3 Ω max at 5 V, 5 Ω max at 3 V).
At 1.8 V operation, RON is typically 40 Ω over the
temperature range.
3. On Resistance Flatness RFLAT (ON) (1 Ω max).
4. −3 dB Bandwidth >200 MHz.
5. Low Power Dissipation.
CMOS construction ensures low power dissipation.
6. Fast tON/tOFF.
7. Tiny 6-Lead and 5-Lead SC70 Packages.
ADG741/ADG742
Rev. A | Page 2 of 12
TABLE OF CONTENTS
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configurations and Function Descriptions ........................... 6
Typical Performance Characteristics ............................................. 7
Terminology ...................................................................................... 8
Test Circuits....................................................................................... 9
Applications Information .............................................................. 10
Supply Voltages........................................................................... 10
On Response vs. Frequency ...................................................... 10
Off Isolation ................................................................................ 10
Outline Dimensions....................................................................... 11
Ordering Guide .......................................................................... 11
REVISION HISTORY
3/05—Rev. 0 to Rev. A
Added 5-Lead Package.......................................................Universal
Change to Absolute Maximum Ratings......................................... 5
Inserted New Figure 4...................................................................... 6
Added Terminology Section ........................................................... 8
Replaced Figure 11, Figure 12, and Figure 13............................... 9
Updated Outline Dimensions....................................................... 12
Changes to Ordering Guide .......................................................... 12
10/00—Revision 0: Initial Version
ADG741/ADG742
Rev. A | Page 3 of 12
SPECIFICATIONS
VDD = 5 V ±10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 1.
B Version
Parameter 25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 2 Ω typ VS = 0 V to VDD, IS = −10 mA;
3 4 Ω max Figure 11
On Resistance Flatness (RFLAT (ON)) 0.5 Ω typ VS = 0 V to VDD, IS = −10 mA
1.0 Ω max
LEAKAGE CURRENTS1 V
DD = 5.5 V
Source OFF Leakage IS (OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
±0.25 ±0.35 nA max Figure 12
Drain OFF Leakage ID (OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
±0.25 ±0.35 nA max Figure 12
Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = 1 V, or 4.5 V;
±0.25 ±0.35 nA max Figure 13
DIGITAL INPUTS
Input High Voltage, VINH 2.4 V min
Input Low Voltage, VINL 0.8 V max
Input Current
IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
DYNAMIC CHARACTERISTICS1
tON 12 ns typ RL = 300 Ω, CL = 35 pF
18 ns max VS = 3 V; Figure 14
tOFF 8 ns typ RL = 300 Ω, CL = 35 pF
12 ns max VS = 3 V; Figure 14
Charge Injection 5 pC typ VS = 2 V, RS = 0 Ω, CL = 1 nF; Figure 15
Off Isolation −55 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−75 dB typ RL = 50 Ω, CL= 5 pF, f = 1 MHz; Figure 16
Bandwidth −3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF; Figure 17
CS (OFF) 17 pF typ
CD (OFF) 17 pF typ
CD, CS (ON) 38 pF typ
POWER REQUIREMENTS VDD = 5.5 V
Digital Inputs = 0 V or 5 V
IDD 0.001 µA typ
1.0 µA max
1 Guaranteed by design; not subject to production test.
ADG741/ADG742
Rev. A | Page 4 of 12
VDD = 3 V ±10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 2.
B Version
Parameter 25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 3.5 Ω typ VS = 0 V to VDD, IS = −10 mA;
5 6 Ω max Figure 11
On Resistance Flatness (RFLAT (ON)) 1.5 Ω typ VS = 0 V to VDD, IS = −10 mA
LEAKAGE CURRENTS1 V
DD = 3.3 V
Source OFF Leakage IS (OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;
±0.25 ±0.35 nA max Figure 12
Drain OFF Leakage ID (OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;
±0.25 ±0.35 nA max Figure 12
Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = 1 V, or 3 V;
±0.25 ±0.35 nA max Figure 13
DIGITAL INPUTS
Input High Voltage, VINH 2.0 V min
Input Low Voltage, VINL 0.4 V max
Input Current
IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
DYNAMIC CHARACTERISTICS1
tON 14 ns typ RL = 300 Ω, CL = 35 pF
20 ns max VS = 2 V, Figure 14
tOFF 8 ns typ RL = 300 Ω, CL = 35 pF
13 ns max VS = 2 V, Figure 14
Charge Injection 4 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 15
Off Isolation −55 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−75 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 16
Bandwidth −3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF; Figure 17
CS (OFF) 17 pF typ
CD (OFF) 17 pF typ
CD, CS (ON) 38 pF typ
POWER REQUIREMENTS VDD = 3.3 V
Digital Inputs = 0 V or 3 V
IDD 0.001 µA typ
1.0 µA max
1 Guaranteed by design; not subject to production test.
ADG741/ADG742
Rev. A | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameters Ratings
VDD to GND −0.3 V to +7 V
Analog, Digital Inputs1 −0.3 V to VDD + 0.3 V
or 30 mA, Whichever
Occurs First
Continuous Current, S or D 30 mA
Peak Current, S or D (Pulsed at 1ms,
10% Duty Cycle Max)
100 mA
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
SC70 Package
θJA Thermal Impedance 494.8°C/W
θJC Thermal Impedance 120°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
ESD 1.5 kV
1 Overvoltages at IN, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
Table 4. Truth Table
ADG741 In ADG742 In Switch Condition
0 1 OFF
1 0 ON
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degrada-
tion or loss of functionality.
ADG741/ADG742
Rev. A | Page 6 of 12
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
02076-002
NC = NO CONNECT
D
1
S
2
GND
3
V
DD
6
NC
5
IN
4
ADG741/
ADG742
TOP VIEW
(Not to Scale)
Figure 3. 6-Lead Pin Configuration
02076-018
D
1
GND
3
S
2
V
DD
5
IN
4
ADG741/
ADG742
TOP VIEW
(Not to Scale)
Figure 4. 5-Lead Pin Configuration
Table 5. Pin Function Descriptions
Pin No. (6-Lead) Pin No. (5-Lead) Mnemonic Description
1 1 D Drain Terminal. May be an input or output.
2 2 S Source Terminal. May be an input or output.
3 3 GND Ground (0 V) Reference.
4 4 IN Logic Control Input.
5 - NC No Connect.
6 5 VDD Most Positive Power Supply Potential.
ADG741/ADG742
Rev. A | Page 7 of 12
TYPICAL PERFORMANCE CHARACTERISTICS
V
D
OR V
S
(DRAIN OR SOURCE VOLTAGE (V))
3.5
00 5.00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
3.0
2.5
2.0
1.5
1.0
0.5
V
DD
= 2.7V
V
DD
= 3.0V V
DD
= 4.5V
V
DD
= 5.0V
T
A
= 25°C
02076-003
R
ON
(Ω)
Figure 5. On Resistance as a Function of VD (VS) Single Supplies
V
D
OR V
S
(DRAIN OR SOURCE VOLTAGE (V))
3.5
00 0.5 1.0 1.5 2.0 2.5 3.0
3.0
2.5
2.0
1.5
1.0
0.5
V
DD
= 3V
+85°C
+25°C
–40°C
02076-004
R
ON
(Ω)
Figure 6. On Resistance as a Function of VD (VS)
for Different Temperatures VDD = 3 V
V
D
OR V
S
(DRAIN OR SOURCE VOLTAGE (V))
00 5.00.5
R
ON
(Ω)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
2.5
2.0
1.5
1.0
0.5
V
DD
= 5V
3.5
3.0
02076-005
+85°C
+25°C
–40°C
Figure 7. On Resistance as a Function of VD (VS)
for Different Temperatures VDD = 5 V
FREQUENCY (Hz)
10m
1
µ
1n10 10M10k
I
SUPPLY
(A)
100n
10n
10
µ
100
µ
1m
100 1k 100k 1M
V
DD
= 5V
02076-006
Figure 8. Supply Current vs. Input Switching Frequency
V
DD
= 5V, 3V
FREQUENCY (Hz)
–10
–50
–110 10M10k
OFF ISOLATION (dB)
–60
–70
–40
–30
–20
100k 1M 100M
–100
–90
–80
02076-007
Figure 9. Off Isolation vs. Frequency
FREQUENCY (Hz)
0
10M10k
–2
100k 1M 100M
–6
02076-008
–4
ON RESPONSE (dB)
V
DD
= 3V
Figure 10. On Response vs. Frequency
ADG741/ADG742
Rev. A | Page 8 of 12
TERMINOLOGY
RON
Ohmic resistance between D and S.
RFLAT (ON)
Flatness is defined as the difference between the maximum and
minimum value of on resistance as measured.
IS (OFF)
Source leakage current with the switch off.
ID (OFF)
Drain leakage current with the switch off.
ID, IS (ON)
Channel leakage current with the switch on.
VD (VS)
Analog voltage on Terminal D and Terminal S.
CS (OFF)
Off switch source capacitance. Measured with reference to
ground.
CD (OFF)
Off switch drain capacitance. Measured with reference to
ground.
CD, CS (ON)
On switch capacitance. Measured with reference to ground.
tON
Delay time between the 50% and the 90% points of the digital
input and switch on condition. See Figure 14.
tOFF
Delay time between the 50% and the 90% points of the digital
input and switch off condition.
Off Isolation
A measure of unwanted signal coupling through an off switch.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during on-off switching.
Bandwidth
The frequency at which the output is attenuated by −3 dB.
On Response
The frequency response of the on switch.
On Loss
The voltage drop across the on switch as how many dBs the
signal is away from 0 dB at very low frequencies. See Figure 10.
ADG741/ADG742
Rev. A | Page 9 of 12
TEST CIRCUITS
02076-009
SD
V
S
V
IDS
Figure 11. On Resistance
SD
V
S
V
D
I
S
(OFF) I
D
(OFF)
A A
02076-010
Figure 12. Off Leakage
SD
V
D
I
D
(ON)
NC A
02076-011
NC = NO CONNECT
Figure 13. On Leakage
0.1
µ
F
V
S
IN
SD
V
DD
GND
R
L
300
Ω
C
L
35pF
V
OUT
V
DD
ADG741
ADG742
V
IN
V
IN
V
OUT
tON tOFF
50% 50%
90% 90%
50% 50%
02076-012
Figure 14. Switching Times
V
S
IN
SD
V
DD
GND
C
L
1nF
V
OUT
R
S
ADG741
ADG742
V
IN
V
IN
V
OUT
OFF
∆V
OUT
ON
Q
INJ
= C
L
× ∆V
OUT
V
DD
02076-013
Figure 15. Charge Injection
IN
SD
V
DD
GND
V
OUT
V
IN
V
S
V
DD
02076-014
0.1
µF
R
L
50Ω
Figure 16. Off Isolation
IN
SD
V
DD
GND
V
OUT
V
IN
V
S
V
DD
02076-015
0.1
µF
R
L
50Ω
Figure 17. Bandwidth
ADG741/ADG742
Rev. A | Page 10 of 12
APPLICATIONS INFORMATION
The ADG741/ADG742 belong to Analog Devices’ family of
CMOS switches. This series of general-purpose switches offers
improved switching times, lower on resistance, higher
bandwidth, low power consumption, and low leakage currents.
SUPPLY VOLTAGES
Functionality of the ADG741/ADG742 extends from 1.8 V to
5.5 V single supply, which makes them ideal for battery-
powered instruments where important design parameters are
power, efficiency, and performance.
It is important to note that the supply voltage affects the input
signal range, the on resistance, and the switching times of the
part. By looking at the typical performance characteristics and
the specifications, the effects of the power supplies can be
clearly seen.
For VDD = 1.8 V operation, RON is typically 40 Ω over the
temperature range.
ON RESPONSE VS. FREQUENCY
Figure 18 illustrates the parasitic components that affect the
ac performance of CMOS switches (the switch is shown
surrounded by a box). Additional external capacitances will
further degrade some performance. These capacitances affect
feedthrough, crosstalk, and system bandwidth.
S
V
IN
D
C
DS
R
ON
C
D
C
LOAD
R
LOAD
V
OUT
02076-016
Figure 18. Switch Represented by Equivalent Parasitic Components
The transfer function that describes the equivalent diagram of
the switch (Figure 18) is of the form A(s), as shown below.
() ()
()
⎥
⎦
⎤
⎢
⎣
⎡
+
+
=1
1
TTON
DSON
TRCRs CRs
RsA
where:
DSDLOADT CCCC ++=
()
ONLOADLOADT RRRR +=
The signal transfer characteristic is dependent on the switch
channel capacitance, CDS. This capacitance creates a frequency
zero in the numerator of the transfer function A(s). Because the
switch on resistance is small, this zero usually occurs at high
frequencies. The bandwidth is a function of the switch output
capacitance combined with CDS and the load capacitance. The
frequency pole corresponding to these capacitances appears in
the denominator of A(s).
The dominant effect of the output capacitance, CD, causes the
pole breakpoint frequency to occur first. To maximize
bandwidth, a switch must have a low input and output
capacitance and low on resistance. The on response vs.
frequency is shown in Figure 10.
OFF ISOLATION
Off isolation is a measure of the input signal coupled through
an off switch to the switch output. The capacitance, CDS, couples
the input signal to the output load when the switch is off, as
shown in Figure 19.
S
V
IN
D
C
DS
C
D
C
LOAD
R
LOAD
V
OUT
02076-017
Figure 19. Off Isolation Affected by External
Load Resistance and Capacitance
The larger the value of CDS, the larger the value of feedthrough
that will be produced. The typical performance characteristic
graph of Figure 9 illustrates the drop in off isolation as a
function of frequency. From dc to roughly 1 MHz, the switch
shows better than −75 dB isolation. Up to frequencies of
10 MHz, the off isolation remains better than −55 dB. As the
frequency increases, more and more of the input signal is
coupled through to the output. Off isolation can be maximized
by choosing a switch with the smallest CDS possible. The values
of load resistance and capacitance affect off isolation also, as
they contribute to the coefficients of the poles and zeros in the
transfer function of the switch when open.
()
(
)
()()
⎥
⎦
⎤
⎢
⎣
⎡
+
=1
TLOAD
DSLOAD CRs
CRs
sA
ADG741/ADG742
Rev. A | Page 11 of 12
OUTLINE DIMENSIONS
COMPLIANT TO JEDEC STANDARDS MO-203-AB
0.22
0.08
0.30
0.10
0.30
0.15
1.00
0.90
0.70
SEATING
PLANE
4 5 6
3 2 1
PIN 1 0.65 BSC
1.30 BSC
0.10 MAX
0.10 COPLANARITY
0.40
0.10
1.10
0.80
2.20
2.00
1.80
2.40
2.10
1.80
1.35
1.25
1.15
Figure 20. 6-Lead Thin Shrink Small Outline Transistor Package [SC70]
(KS-6)
Dimensions shown in millimeters
COMPLIANT TO JEDEC STANDARDS MO-203AA
0.30
0.15
0.10 MAX
1.00
0.90
0.70
SEATING
PLANE
0.22
0.08
1.10
0.80
0.30
0.10
45
123
PIN 1 0.65 BSC
2.20
2.00
1.80
2.40
2.10
1.80
1.35
1.25
1.15
0.10 COPLANARITY
0.40
0.10
Figure 21. 5-Lead Thin Shrink Small Outline Transistor Package [SC70]
(KS-5)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Brand1 Package Description Package Option
ADG741BKS-R2 −40°C to +85°C SFB 6-lead SC70 KS-6
ADG741BKS-REEL −40°C to +85°C SFB 6-lead SC70 KS-6
ADG741BKS-REEL7 −40°C to +85°C SFB 6-lead SC70 KS-6
ADG741BKSZ-REEL2 −40°C to +85°C S00 6-lead SC70 KS-6
ADG741BKSZ5-REEL2 −40°C to +85°C S00 5-lead SC70 KS-5
ADG741BKSZ5-REEL72 −40°C to +85°C S00 5-lead SC70 KS-5
ADG742BKS-R2 −40°C to +85°C SGB 6-lead SC70 KS-6
ADG742BKS-REEL −40°C to +85°C SGB 6-lead SC70 KS-6
ADG742BKS-REEL7 −40°C to +85°C SGB 6-lead SC70 KS-6
ADG742BKSZ-R22 −40°C to +85°C S01 6-lead SC70 KS-6
ADG742BKSZ-REEL2 −40°C to +85°C S01 6-lead SC70 KS-6
ADG742BKSZ-REEL72 −40°C to +85°C S01 6-lead SC70 KS-6
ADG742BKSZ5-REEL2 −40°C to +85°C S01 5-lead SC70 KS-5
ADG742BKSZ5-REEL72 −40°C to +85°C S01 5-lead SC70 KS-5
1 Brand on these packages is limited to three characters due to space constraints.
2 Z = Pb-free part.
ADG741/ADG742
Rev. A | Page 12 of 12
NOTES
©2005 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
C02076–0–3/05(A)
