AP4002S/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristics Simple Drive Requirement G BVDSS 600V RDS(ON) 5 ID 2A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-263(S) The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for power applications.The through-hole version (AP4002P) are available for low-profile applications. G D TO-220(P) S Absolute Maximum Ratings Rating Units VDS Symbol Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V ID@TC=25 Continuous Drain Current, V GS @ 10V 2 A 8 A 20 W 0.16 W/ 20 mJ 2 A Parameter 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Units 6.25 /W 62 /W 201019072-1/4 AP4002S/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.0A - - 5 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=2.0A - 1.5 - S o IDSS Drain-Source Leakage Current (Tj=25 C) VDS=600V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=30V - - 1 uA ID=2A - 12 19 nC 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 5.5 - nC 3 td(on) Turn-on Delay Time VDD=200V - 10 - ns tr Rise Time ID=1A - 12 - ns td(off) Turn-off Delay Time RG=50,VGS=10V - 52 - ns tf Fall Time RD=200 - 19 - ns Ciss Input Capacitance VGS=0V - 375 600 pF Coss Output Capacitance VDS=10V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Min. Typ. IS=2A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=2A, VGS=0V, - 340 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 2.2 - C Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25 3.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP4002S/P 2 2 o 10V 7.0V 6.0V ID , Drain Current (A) 1.6 o 10V 7.0V 6.0V 5.0V T C =150 C 1.6 ID , Drain Current (A) T C =25 C 1.2 5.0V 0.8 V G =4.5V 0.4 1.2 0.8 V G =4.0V 0.4 0 0 0 2 4 6 8 10 0 10 20 30 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 I D =1.0A V G =10V 2.4 Normalized RDS(ON) Normalized BVDSS (V) 1.1 1 2 1.6 1.2 0.8 0.9 0.4 0 0.8 -50 0 50 100 -50 150 T j , Junction Temperature ( o C) 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1.6 1.4 Normalized VGS(th) (V) IS (A) 8 6 T j = 150 o C T j = 25 o C 4 1.2 1 0.8 2 0.6 0 0.4 0.1 0.3 0.5 0.7 0.9 1.1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP4002S/P f=1.0MHz 10000 12 10 C iss 8 C (pF) VGS , Gate to Source Voltage (V) 14 I D =2A V DS =480V 100 C oss 6 C rss 4 2 0 1 0 4 8 12 16 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 100us ID (A) 1 1ms 10ms 100ms 1s DC 0 o T C =25 C Single Pulse Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 E SYMBOLS MIN NOM MAX A 4.25 4.75 5.20 A1 0.00 0.15 0.30 A2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 D c1 1.15 1.30 1.45 D 8.30 8.90 9.40 E 9.70 10.10 10.50 e 2.04 2.54 3.04 L2 ----- 1.50 ----- L3 4.50 4.90 5.30 L4 ----- 1.50 ---- b1 L2 L3 b e L4 Millimeters A A2 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. c c1 A1 Part Marking Information & Packing : TO-263 Part Number Package Code 4002S LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 A E L2 MIN NOM MAX A 4.25 4.48 4.70 b b1 c c1 0.65 0.80 0.90 1.15 1.38 1.60 0.40 0.50 0.60 1.00 1.20 1.40 E 9.70 10.00 10.40 E1 --- --- 11.50 e ---- 2.54 ---- L1 L5 c1 D L4 b1 L3 Millimeters SYMBOLS L c b L 12.70 13.60 14.50 L1 2.60 2.80 3.00 L2 1.00 1.40 1.80 L3 2.6 3.10 3.6 L4 14.70 15.50 16 L5 6.30 6.50 6.70 3.50 3.60 3.70 D 8.40 8.90 9.40 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-220 Part Number Package Code 4002P LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence