AP4002P - Advanced Power Electronics Corp. USA

Advanced Power N-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

▼ 100% Avalanche Test BVDSS 600V

▼ Fast Switching Characteristics RDS(ON) 5Ω

▼ Simple Drive Requirement ID2A

Description

Absolute Maximum Ratings

Symbol Units

VDS Drain-Source Voltage V

VGS Gate-Source Voltage V

ID@TC=25℃Continuous Drain Current, VGS @ 10V A

IDM Pulsed Drain Current1A

PD@TC=25℃Total Power Dissipation W

W/℃

EAS Single Pulse Avalanche Energy2mJ

IAR Avalanche Current A

TSTG ℃

TJOperating Junction Temperature Range ℃

Thermal Data

Symbol Value Units

Rthj-c Maximum Thermal Resistance, Junction-case 6.25 ℃/W

Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W

Data & specifications subject to change without notice

RoHS-compliant Product

201019072-1/4

AP4002S/P

-55 to 150

Parameter

Parameter Rating

600

±30

Storage Temperature Range -55 to 150

Linear Derating Factor 0.16

GDSTO-263(S)

GDSTO-220(P)

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-263 package is widely preferred for commercial-industrial

surface mount applications and suited for power applications.The

through-hole version (AP4002P) are available for low-profile applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V

RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.0A - - 5 Ω

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V

gfs Forward Transconductance VDS=10V, ID=2.0A - 1.5 - S

IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 100 uA

IGSS Gate-Source Leakage VGS=±30V - - ±1 uA

QgTotal Gate Charge3ID=2A - 12 19 nC

Qgs Gate-Source Charge VDS=480V - 2 - nC

Qgd Gate-Drain ("Miller") Charge VGS=10V - 5.5 - nC

td(on) Turn-on Delay Time3VDD=200V - 10 - ns

trRise Time ID=1A - 12 - ns

td(off) Turn-off Delay Time RG=50Ω,VGS=10V - 52 - ns

tfFall Time RD=200Ω-19-ns

Ciss Input Capacitance VGS=0V - 375 600 pF

Coss Output Capacitance VDS=10V - 170 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage3IS=2A, VGS=0V - - 1.5 V

trr Reverse Recovery Time3IS=2A, VGS=0V, - 340 - ns

Qrr Reverse Recovery Charge dI/dt=100A/µs - 2.2 - µC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω

3.Pulse test

2/4

AP4002S/P

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

5. Forward Characteristic o

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3/4

AP4002S/P

0.4

0.8

1.2

1.6

2.4

2.8

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

ID=1.0A

VG=10V

0.8

0.9

1.1

1.2

-50 0 50 100 150

T j , Junction Temperature ( oC)

Normalized BVDSS (V)

0.4

0.8

1.2

1.6

0246810

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=25oC

VG=4.5V

10V

7.0V

6.0V

5.0V

0.4

0.8

1.2

1.6

0102030

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=150oC

VG=4.0V

10V

7.0V

6.0V

5.0V

0.1 0.3 0.5 0.7 0.9 1.1 1.3

VSD , Source-to-Drain Voltage (V)

IS (A)

Tj = 25oCTj = 150 oC

0.4

0.6

0.8

1.2

1.4

1.6

-50 0 50 100 150

Tj , Junction Temperature ( o C)

Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4/4

AP4002S/P

1 10 100 1000

VDS , Drain-to-Source Voltage (V)

ID (A)

TC=25 oC

Single Pulse

100us

1ms

10ms

100ms

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

Normalized Th e rmal Re sponse (Rthjc)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

td(on) trtd(off)tf

VDS

VGS

10%

90%

10V

QGS QGD

Charge

100

10000

1 5 9 1317212529

VDS , Drain-to-Source Voltage (V)

C (pF)

=1.0MH

Ciss

Coss

Crss

0 4 8 12 16

QG , Total Gate Charge (nC)

VGS , Gate to Sourc e Voltage ( V)

ID=2A

VDS =480V

Package Outline : TO-263

Millimeters

MIN NOM MAX

A 4.25 4.75 5.20

A1 0.00 0.15 0.30

A2 2.20 2.45 2.70

b 0.70 0.90 1.10

b1 1.07 1.27 1.47

c 0.30 0.45 0.60

c1 1.15 1.30 1.45

D 8.30 8.90 9.40

E 9.70 10.10 10.50

e 2.04 2.54 3.04

L2 ----- 1.50 -----

L3 4.50 4.90 5.30

L4 ----- 1.50 ----

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-263

SYMBOLS

ADVANCED POWER ELECTRONICS CORP.

Package Code

Part Numbe

YWWSSS

Y：Last Digit Of The Year

WW：Week

SSS：Sequence

Package Code

Part Numbe

4002S

YWWSSS LOGO

Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS：Sequence

Package Outline : TO-220

Millimeters

MIN NOM MAX

A 4.25 4.48 4.70

b0.65 0.80 0.90

b1 1.15 1.38 1.60

c0.40 0.50 0.60

c1 1.00 1.20 1.40

E 9.70 10.00 10.40

E1 --- --- 11.50

e---- 2.54 ----

L 12.70 13.60 14.50

L1 2.60 2.80 3.00

L2 1.00 1.40 1.80

L3 2.6 3.10 3.6

L4 14.70 15.50 16

L5 6.30 6.50 6.70

φ3.50 3.60 3.70

D 8.40 8.90 9.40

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-220

SYMBOLS

ADVANCED POWER ELECTRONICS CORP.

Package Code

Part Number

Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS：Se

uence

4002P

YWWSSS

LOGO