BFR94A - NXP - Datasheet.Live

1. Product profile

1.1 General description

NPN wideband transistor in a plastic SOT23 package. PNP complement; BFT92

1.2 Features and benefits

High power gain

Low noise figure

Low intermodulation distortion

AEC-Q101 qualified

1.3 Applications

RF wideband amplifiers and oscillators

1.4 Quick reference data

BFR94A

NPN 5 GHz wideband transistor

Rev. 3 — 15 November 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCBO collector-base voltage - - 20 V

VCEO collector-emitter

voltage -- 15V

ICcollector current - - 25 mA

Ptot total power dissipation Tsp ≤95 °C--300mW

Cre feedback capacitance IC=i

C=0mA; V

CE =10V;

f=1MHz -0.35- pF

fTtransition frequency IC=15mA; V

CE =10V;

f=500MHz -5- GHz

GUM unilateral power gain IC=15mA; V

CE =10V;

Tamb =25°C

f=1GHz - 14 - dB

f=2GHz - 8 - dB

NF noise figure IC=5mA; V

CE =10V; f=1GHz;

ΓS=Γopt; Tamb =25°C-2.1- dB

VOoutput voltage IMD = −60 dB; IC=14mA;

VCE =10V; R

L=75Ω;

fp+f

q−fr= 793.25 MHz

-150- mV

Product data sheet Rev. 3 — 15 November 2010 2 of 14

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

[1] Tsp is the temperature at the solder point of the collector pin.

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1base

2emitter

3 collector

sym02

Table 3. Ordering information

Type number Package

Name Description Version

BFR94A - plastic surface-mounted package; 3 leads SOT23

Table 4. Marking

Type number Marking code Description

BFR94A NL* * = p : made in Hong Kong

* = w : made in China

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 20 V

VCEO collector-emitter voltage open base - 15 V

VEBO emitter-base voltage open collector - 2 V

ICcollector current - 25 mA

Ptot total power dissipation Tsp ≤95 °C; see Figure 2 [1] -300mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature - +150 °C

Product data sheet Rev. 3 — 15 November 2010 3 of 14

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

6. Thermal characteristics

[1] Tsp is the temperature at the solder point of the collector pin.

7. Characteristics

[1] GUM is the maximum unilateral power gain, assuming S12 is zero and

[2] Measured on the same crystal in a SOT37 package (BFR90A).

[3] IMD = −60 dB (DIN 45004B); IC=14mA; V

CE =10V; R

L=75Ω; VSWR < 2; Tamb =25°C;

Vp=V

O at IMD = −60 dB; fp= 795.25 MHz;

Vq=V

O −6dB at f

q= 803.25 MHz;

Vr=V

O −6dB at f

r= 805.25 MHz;

measured at fp+f

q−fr= 793.25 MHz

[4] IC=14mA; V

CE =10V; R

L=75Ω; VSWR < 2; Tamb =25°C;

Vp=60mV at f

p=250MHz;

Vq=60mV at f

p=560MHz;

measured at fp+f

q= 810 MHz

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resistance from junction to

solder point Tsp ≤95 °C[1] 260 K/W

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off current IE=0A; V

CB =10V --50nA

hFE DC current gain IC=15mA; V

CE = 10 V ; see Figure 3 65 90 135

Cccollector capacitance IE=i

e=0A; V

CB =10V; f=1MHz:

see Figure 4 -0.6-pF

Ceemitter capacitance IC=i

c=0A; V

EB =10V; f=1MHz - 1.2 - pF

Cre feedback capacitance IC=i

c=0mA; V

CE =10V; f=1MHz - 0.35 - pF

fTtransition frequency IC=15mA; V

CE = 10 V; f = 500 MHz;

see Figure 5 -5-GHz

GUM unilateral power gain IC=15mA; V

CE =10V; T

amb =25°C[1]

f=1GHz - 14 - dB

f=2GHz - 8 - dB

NF noise figure IC=5mA; V

CE =10V; ΓS=Γopt;

Tamb =25°C;

see Figure 12 and Figure 13

f=1GHz - 2.1 - dB

f=2GHz - 3 - dB

VOoutput voltage [2][3] -150-mV

IMD2 second-order intermodulation

distortion see Figure 15 [2][4] -−50 - dB

GUM 10 S21 2

11 2)1S

22 2)–(–(

-------------------------------------------------------- dB.log=

Product data sheet Rev. 3 — 15 November 2010 4 of 14

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

L1 = L2 = 5 μH choke.

L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.

Fig 1. Intermodulation distortion and second harmonic distortion MATV test circuit

001aam88

33 kΩ

18 Ω

300 Ω

2.2 nF

1 nF

3.3 pF 0.82 pF

+VCC

+VBB

DUT

75 Ω

input

75 Ω

output

2.2 nF

VCE =10V; T

j= 25 °C.

Fig 2. Power derating curve Fig 3. DC current gain as a function of collector

current; typical values

Tsp (°C)

0 20015050 100

001aam884

200

100

300

400

Ptot

(mW)

001aam885

IC (mA)

0302010

120

hFE

Product data sheet Rev. 3 — 15 November 2010 5 of 14

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

IC=i

C= 0 mA; f = 1 MHz; Tj= 25 °C. VCE = 10 V; f = 500 MHz; Tamb =25°C.

Fig 4. Collector capacitan ce as a function of

collector-base voltage; typical values Fig 5. Transition frequency as a function of collector

current; typical values

VCE = 10 V; f = 500 MHz.

MSG = maximum stable gain. VCE = 10 V; f = 500 MHz.

MSG = maximum stable gain.

Fig 6. Gain as a function of collector cu rre nt ; typi ca l

values Fig 7. Gain as a function of collector current; typical

values

VCB (V)

02015510

001aam886

0.4

0.6

0.2

0.8

1.0

(pF)

IC (mA)

0302010

001aam887

(GHz)

IC (mA)

0252010 155

001aam888

gain

(dB)

GUM

MSG

IC (mA)

0252010 155

001aam889

gain

(dB)

GUM

MSG

Product data sheet Rev. 3 — 15 November 2010 6 of 14

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

IC=5mA; V

CE =10V.

MSG = maximum stable gain.

Gmax = maximum available gain.

IC=5mA; V

CE =10V.

MSG = maximum stable gain.

Gmax = maximum available gain.

Fig 8. Gain as a function of frequency; typical values Fig 9. Minimum noise figure as a function of

frequency; typical values

IC=4mA; V

CE =10V; f=800MHz. I

C=14mA; V

CE = 10 V; f = 800 MHz.

Fig 10. Circles of constant noise figure; typical values Fig 11. Circles of constant noise figure; typical values

f (MHz)

10 104

103

102

001aam890

gain

(dB)

GUM

Gmax

MSG

f (MHz)

10 104

103

102

001aam891

gain

(dB)

GUM

Gmax

MSG

GS (mS)

0806020 40

001aam892

−20

(mS)

−40

NF = 3.0 dB

2.5

2.0

1.8

1.7

GS (mS)

0604020

001aam893

−10

(mS)

−30

NF = 3.5 dB

3.0

2.5

2.4

Product data sheet Rev. 3 — 15 November 2010 7 of 14

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

VCE =10V. V

CE =10V.

Fig 12. Minimum noise figure as a function of

collector current; typical values Fig 13. Minimum noise figure as a function of

frequency; typical values

VCE =10V. V

CE =10V.

Fig 14. Intermodulation dis tortion as a function of

collector current; typical values Fig 15. Second-order interm odulation distortion as a

function of collector current; typical values

IC (mA)

110

001aam894

(dB)

f = 2 GHz

1 GHz

500 MHz

f (MHz)

102104

103

001aam895

(dB)

IC = 15 mA

10 mA

5 mA

IC (mA)

10 302618 2214

001aam896

−60

−55

−65

−50

−45

IMD

(dB)

−70

IC (mA)

10 302618 2214

001aam897

−50

−45

−55

−40

−35

IMD2

(dB)

−60

Product data sheet Rev. 3 — 15 November 2010 8 of 14

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

VCE = 10 V; IC= 14 mA; ZO=50Ω; Tamb =25°C.

Fig 16. Common emitter input reflection coefficient (S11); typical values

VCE = 10 V; IC= 14 mA; Tamb =25°C.

Fig 17. Common emitter forward transmission co efficient (S21); typical values

001aam898

0.2

0.5

0.2

0.5

0.50.2 2

110

−j

∞

100 MHz

1200

1000 800

500

200

001aam899

90°

−90°

30°150°

60°120°

180°

+ϕ

−ϕ

00°

10 20 30

100 MHz

1200

1000

800

500

200

Product data sheet Rev. 3 — 15 November 2010 9 of 14

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

VCE = 10 V; IC= 14 mA; Tamb =25°C.

Fig 18. Common emitter reverse transmission coefficient (S12); typical values

VCE = 10 V; IC= 14 mA; ZO=50Ω; Tamb =25°C.

Fig 19. Common emitter output reflection coefficient (S22); typical values

001aam900

90°

−90°

30°150°

60°120°

180°

+ϕ

−ϕ

00°

0.05 0.1 0.15

1200 MHz

typ 1000

800

500

100 200

001aam901

0.2

0.5

0.2

0.5

0.50.2 2

110

−j

∞

100

MHz

1200

1000 800

500

200

Product data sheet Rev. 3 — 15 November 2010 10 of 14

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

8. Package outline

Fig 20. Package outline SOT23

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2 0.95

1.9 2.5

2.1

0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

Product data sheet Rev. 3 — 15 November 2010 11 of 14

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

9. Abbreviations

10. Revision history

Table 8. Abbreviations

Acronym Description

NPN Negative Positive Negative

PNP Positive Negative Positive

RF Radio Frequency

MATV Master Antenna Television

VSWR Voltage Standing Wave Ratio

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFR94A v. 3 20101115 Product data sheet - BFR94A v.2

Modifications: •The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Replaces previous data sheet and documentation of BFR94A.

BFR94A v.2 19971204 Product data sheet - -

Product data sheet Rev. 3 — 15 November 2010 12 of 14

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificat ion — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

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Product data sheet.

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Notwithstanding any damages that customer might incur for any reason

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customer for the products described herein shall be limited in accordance

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changes to information published in this document, including without

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therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

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Semiconductors product is suit able and fit for the custome r’s applications and

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NXP Semiconductors does not accept any liabil i ty related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

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testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

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Export control — This document as well as the item(s) described herein

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 15 November 2010 13 of 14

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors prod uct is automotive qualified,

the product is not suitable for automotive use. It i s neit her qualif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y

liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specif ications.

11.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BFR94A

NPN 5 GHz wideband transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 15 Nove mber 2010

Document identifier: BFR94A

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12 Contact information. . . . . . . . . . . . . . . . . . . . . 13

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14